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Matrix Element Architecture Based on a Mercury–Cadmium–Tellurium Ternary Solution with Reduced Dark Current

Journal of communications technology & electronics, 2023-03, Vol.68 (3), p.371-377

Iakovleva, N. I.

2023

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Advanced Architecture of a CdHgTe Photodiode for Detection of Weak Infrared Radiation

Journal of communications technology & electronics, 2022-03, Vol.67 (3), p.329-334

Iakovleva, N. I.

2022

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The Study of Dark Currents in HgCdTe Heterostructure Photodiodes

Journal of communications technology & electronics, 2021-03, Vol.66 (3), p.368-374

Iakovleva, N. I.

2021

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Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures

Journal of communications technology & electronics, 2019-03, Vol.64 (3), p.330-333

Iakovleva, N. I.

2019

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Focal Plane Arrays Based on the Binary and Ternary Antimonide-Group Homo- and Heterostructures

Journal of communications technology & electronics, 2023-09, Vol.68 (9), p.1029-1035

2023

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Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range

Journal of communications technology & electronics, 2023-03, Vol.68 (3), p.316-324

2023

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Modern Photodetector IR-Modules

Journal of communications technology & electronics, 2022-09, Vol.67 (9), p.1175-1184

2022

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Investigation of spectral dependences of the absorption coefficient in InGaAs layers

Journal of communications technology & electronics, 2017-03, Vol.62 (3), p.331-335

2017

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Temperature Dependence of Current in a InAsSb-Based p–n Photodiode

Journal of communications technology & electronics, 2023-12, Vol.68 (Suppl 2), p.S190-S197

2023

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Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures

Journal of communications technology & electronics, 2016-10, Vol.61 (10), p.1186-1193

2016

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Barrier рBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1–4.2 µm

Journal of communications technology & electronics, 2021-09, Vol.66 (9), p.1096-1102

2021

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Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

Journal of communications technology & electronics, 2016-03, Vol.61 (3), p.319-323

2016

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Temperature dependence of diffusion length in MCT epitaxial layers

Journal of communications technology & electronics, 2016-03, Vol.61 (3), p.344-347

2016

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Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers

Journal of communications technology & electronics, 2018-03, Vol.63 (3), p.277-280

2018

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Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1046-1054

2019

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Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures

Journal of communications technology & electronics, 2018-09, Vol.63 (9), p.1132-1136

2018

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Savitzky–Golay filtering of the spectral sensitivity of photodetector arrays

Journal of communications technology & electronics, 2017-09, Vol.62 (9), p.1048-1052

2017

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Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging

Journal of communications technology & electronics, 2017-09, Vol.62 (9), p.1061-1065

2017

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Barrier ÑBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1-4.2 m

Journal of communications technology & electronics, 2021-09, Vol.66 (9), p.1096

2021

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Clinical immunological disorders in children from various observation cohorts exposed to radiation factor during various stages of oncogenesis

Radiat͡s︡ionnai͡a︡ biologii͡a︡, radioėkologii͡a, 2011-01, Vol.51 (1), p.7

2011

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320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer

Journal of communications technology & electronics, 2016-03, Vol.61 (3), p.348-351

2016

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320 × 256 avalanche array photodetector on the basis of ternary alloys of the A^sub 3^B^sub 5^ group with an InGaAs absorbing layer and an InAlAs barrier layer

Journal of communications technology & electronics, 2016-03, Vol.61 (3), p.348

2016

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320 256 avalanche array photodetector on the basis of ternary alloys of the A sub(3)B sub(5) group with an InGaAs absorbing layer and an InAlAs barrier layer

Journal of communications technology & electronics, 2016-03, Vol.61 (3), p.348-351

2016

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Leptinotarsa decemlineata Say sensitivity to ionizing radiation and pesticides

Radiat͡s︡ionnai͡a︡ biologii͡a︡, radioėkologii͡a, 2008-07, Vol.48 (4), p.416

2008

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Clinico-morphological peculiarities of thyroid cancer among children exposed to the Chernobyl disaster radiation

Voprosy onkologij, 2008, Vol.54 (3), p.315

2008

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Matrix Element Architecture Based on a Mercury–Cadmium–Tellurium Ternary Solution with Reduced Dark Current

Advanced Architecture of a CdHgTe Photodiode for Detection of Weak Infrared Radiation

The Study of Dark Currents in HgCdTe Heterostructure Photodiodes

Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures

Focal Plane Arrays Based on the Binary and Ternary Antimonide-Group Homo- and Heterostructures

Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range

Modern Photodetector IR-Modules

Investigation of spectral dependences of the absorption coefficient in InGaAs layers

Temperature Dependence of Current in a InAsSb-Based p–n Photodiode

Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures

Barrier рBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1–4.2 µm

Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

Temperature dependence of diffusion length in MCT epitaxial layers

Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers

Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs

Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures

Savitzky–Golay filtering of the spectral sensitivity of photodetector arrays

Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging

Barrier ÑBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1-4.2 m

Clinical immunological disorders in children from various observation cohorts exposed to radiation factor during various stages of oncogenesis

320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer

320 × 256 avalanche array photodetector on the basis of ternary alloys of the A^sub 3^B^sub 5^ group with an InGaAs absorbing layer and an InAlAs barrier layer

320 256 avalanche array photodetector on the basis of ternary alloys of the A sub(3)B sub(5) group with an InGaAs absorbing layer and an InAlAs barrier layer

Leptinotarsa decemlineata Say sensitivity to ionizing radiation and pesticides

Clinico-morphological peculiarities of thyroid cancer among children exposed to the Chernobyl disaster radiation

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