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ESR study of p-type natural 2H-polytype MoS2 crystals: The As acceptor activity

Applied physics letters, 2016-10, Vol.109 (17)

2016

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The lead acceptor in p-type natural 2H-polytype MoS2 crystals evidenced by electron paramagnetic resonance

Journal of physics. Condensed matter, 2017-03, Vol.29 (8), p.08LT01-08LT01

2017

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Inherent point defects at the thermal higher-Miller index (211)Si/SiO2 interface

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization

Nanoscale research letters, 2017-04, Vol.12 (1), p.283-283, Article 283

2017

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Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.7173-7179

2022

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Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications

ECS journal of solid state science and technology, 2020-12, Vol.9 (12), p.123011

2020

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Multi-frequency electron spin resonance study of inherent Si dangling bond defects at the thermal (211)Si/SiO2 interface

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1589-1592

2014

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Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.330-331

2022

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Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.284-285

2022

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Processing-induced near-interfacial thermal donor generation in (100)Si/Si-oxycarbide insulator structures revealed by electron spin resonance

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1574-1577

2014

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Near-interfacial thermal donor generation during processing of (100)Si/low-κ Si-oxycarbide insulator structures revealed by electron spin resonance

Semiconductor science and technology, 2014-09, Vol.29 (9), p.95008

2014

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Inherent point defects at the thermal higher-Miller index (211)Si/SiO{sub 2} interface

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Multi‐frequency electron spin resonance study of inherent Si dangling bond defects at the thermal (211)Si/SiO 2 interface

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1589-1592

2014

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Multi-frequency electron spin resonance study of inherent Si dangling bond defects at the thermal (211)Si/SiO sub(2) interface

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1589-1592

2014

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Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding

ECS journal of solid state science and technology, 2022-06, Vol.11 (6), p.63012

2022

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The lead acceptor in p-type natural 2H-polytype MoS 2 crystals evidenced by electron paramagnetic resonance

Journal of physics. Condensed matter, 2017-03, Vol.29 (8), p.08LT01

2017

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Origin of Voids at the SiO 2 /SiO 2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance

ECS journal of solid state science and technology, 2023-03, Vol.12 (3), p.33002

2023

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Characterization of Silicon Carbon Nitride for Low Temperature Wafer-to-Wafer Direct Bonding

ECS transactions, 2020-09, Vol.98 (4), p.21-31

2020

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Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS 2 Films Grown on SiO 2 by Mo Sulfurization

Nanoscale research letters, 2017-12, Vol.12 (1), p.283

2017

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Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS^sub 2^ Films Grown on SiO2 by Mo Sulfurization

Nanoscale research letters, 2017-04, Vol.12 (1), p.1

2017

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Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding

2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC), 2020, p.464-467

2020

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Paramagnetic oxide traps in Sc2O3-passivated (100)Ge/HfO2 stacks

Microelectronic engineering, 2015-11, Vol.147, p.180-183

2015

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Influence of Composition of SiCN Film for Surface Activated Bonding

ECS transactions, 2018, Vol.86 (5), p.159-168

2018

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What drives prescribing of asthma medication to preschool wheezing children? A primary care study

Pediatric pulmonology, 2013-12, Vol.48 (12), p.1160-1170

2013

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Advances in SiCN-SiCN Bonding with High Accuracy Wafer-to-Wafer (W2W) Stacking Technology

2018 IEEE International Interconnect Technology Conference (IITC), 2018, p.179-181

2018

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ESR study of p-type natural 2H-polytype MoS2 crystals: The As acceptor activity

The lead acceptor in p-type natural 2H-polytype MoS2 crystals evidenced by electron paramagnetic resonance

Inherent point defects at the thermal higher-Miller index (211)Si/SiO2 interface

Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization

Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails

Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications

Multi-frequency electron spin resonance study of inherent Si dangling bond defects at the thermal (211)Si/SiO2 interface

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections

Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails

Processing-induced near-interfacial thermal donor generation in (100)Si/Si-oxycarbide insulator structures revealed by electron spin resonance

Near-interfacial thermal donor generation during processing of (100)Si/low-κ Si-oxycarbide insulator structures revealed by electron spin resonance

Inherent point defects at the thermal higher-Miller index (211)Si/SiO{sub 2} interface

Multi‐frequency electron spin resonance study of inherent Si dangling bond defects at the thermal (211)Si/SiO 2 interface

Multi-frequency electron spin resonance study of inherent Si dangling bond defects at the thermal (211)Si/SiO sub(2) interface

Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding

The lead acceptor in p-type natural 2H-polytype MoS 2 crystals evidenced by electron paramagnetic resonance

Origin of Voids at the SiO 2 /SiO 2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance

Characterization of Silicon Carbon Nitride for Low Temperature Wafer-to-Wafer Direct Bonding

Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS 2 Films Grown on SiO 2 by Mo Sulfurization

Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS^sub 2^ Films Grown on SiO2 by Mo Sulfurization

Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding

Paramagnetic oxide traps in Sc2O3-passivated (100)Ge/HfO2 stacks

Influence of Composition of SiCN Film for Surface Activated Bonding

What drives prescribing of asthma medication to preschool wheezing children? A primary care study

Advances in SiCN-SiCN Bonding with High Accuracy Wafer-to-Wafer (W2W) Stacking Technology

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