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More-Than-Moore Devices and Integration for Semiconductors

1, 2023

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Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV

Carbon (New York), 2014-03, Vol.68, p.563-572

2014

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2D Materials

1, 2016

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Low dielectric constant materials for microelectronics

Journal of applied physics, 2003-06, Vol.93 (11), p.8793-8841

2003

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Low-k dielectric materials

Materials Today, 2004-01, Vol.7 (1), p.34-39

2004

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Controlling the surface roughness of epitaxial SiC on silicon

Journal of applied physics, 2014-05, Vol.115 (20)

2014

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The transition from 3C SiC(111) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy

Carbon (New York), 2015-09, Vol.91, p.378-385

2015

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A High Temperature Operando Study of Epitaxial Graphene Growth on Cubic Silicon Carbide Using Neutron Reflectometry

Neutron news, 2024-04, Vol.35 (2), p.9-11

2024

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Growing Graphene on Semiconductors

1st, 2017

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Effect of substrate polishing on the growth of graphene on 3C-SiC(111) Si(111) by high temperature annealing

Nanotechnology, 2016-05, Vol.27 (18), p.185601-185601

2016

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Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth

Nanotechnology, 2007-12, Vol.18 (50), p.505307-505307 (7)

2007

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Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation

Journal of applied physics, 2006-03, Vol.99 (5), p.053511-053511-7

2006

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Challenges in the implementation of low-k dielectrics in the back-end of line

Microelectronic engineering, 2005-06, Vol.80, p.337-344

2005

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Sidewall damage in silica-based low- k material induced by different patterning plasma processes studied by energy filtered and analytical scanning TEM

Microelectronic engineering, 2007-03, Vol.84 (3), p.517-523

2007

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Compressive stress relaxation through buckling of a low- k polymer-thin cap layer system

Applied physics letters, 2003-03, Vol.82 (9), p.1380-1382

2003

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Plasma assisted growth of nanotubes and nanowires

Surface & coatings technology, 2007-09, Vol.201 (22), p.9215-9220

2007

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Ultraviolet-Assisted Curing of Organosilicate Glass Low-k Dielectric by Excimer Lamps

Journal of the Electrochemical Society, 2008, Vol.155 (11), p.G231

2008

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Thermomechanical properties of thin organosilicate glass films treated with ultraviolet-assisted cure

Acta materialia, 2007-02, Vol.55 (4), p.1407-1414

2007

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Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon

Journal of applied physics, 2023-05, Vol.133 (17)

2023

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Time evolution of graphene growth on SiC as a function of annealing temperature

Carbon (New York), 2016-03, Vol.98, p.307-312

2016

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Challenges for structural stability of ultra-low- k-based interconnects

Microelectronic engineering, 2004-07, Vol.75 (1), p.54-62

2004

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Stress corrosion of organosilicate glass films in aqueous environments: Role of pH

Journal of materials research, 2008-03, Vol.23 (3), p.862-868

2008

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Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon

Acta materialia, 2013-10, Vol.61 (17), p.6533-6540

2013

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Factors affecting an efficient sealing of porous low- k dielectrics by physical vapor deposition Ta(N) thin films

Journal of applied physics, 2002-08, Vol.92 (3), p.1548-1554

2002

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Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene lines

IEEE electron device letters, 2003-03, Vol.24 (3), p.147-149

2003

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More-Than-Moore Devices and Integration for Semiconductors

Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV

2D Materials

Low dielectric constant materials for microelectronics

Low-k dielectric materials

Controlling the surface roughness of epitaxial SiC on silicon

The transition from 3C SiC(111) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy

A High Temperature Operando Study of Epitaxial Graphene Growth on Cubic Silicon Carbide Using Neutron Reflectometry

Growing Graphene on Semiconductors

Effect of substrate polishing on the growth of graphene on 3C-SiC(111) Si(111) by high temperature annealing

Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth

Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation

Challenges in the implementation of low-k dielectrics in the back-end of line

Sidewall damage in silica-based low- k material induced by different patterning plasma processes studied by energy filtered and analytical scanning TEM

Compressive stress relaxation through buckling of a low- k polymer-thin cap layer system

Plasma assisted growth of nanotubes and nanowires

Ultraviolet-Assisted Curing of Organosilicate Glass Low-k Dielectric by Excimer Lamps

Thermomechanical properties of thin organosilicate glass films treated with ultraviolet-assisted cure

Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon

Time evolution of graphene growth on SiC as a function of annealing temperature

Challenges for structural stability of ultra-low- k-based interconnects

Stress corrosion of organosilicate glass films in aqueous environments: Role of pH

Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon

Factors affecting an efficient sealing of porous low- k dielectrics by physical vapor deposition Ta(N) thin films

Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene lines

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