UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Electric-field control of spin accumulation signals in silicon at room temperature

Applied physics letters, 2011-09, Vol.99 (13), p.132511-132511-3

2011

Volltextzugriff (PDF)

Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

Applied physics letters, 2013-02, Vol.102 (8)

2013

Volltextzugriff (PDF)

Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method

Thin solid films, 2012-02, Vol.520 (8), p.3232-3235

2012

Volltextzugriff (PDF)

Formation mechanism of peculiar structures on vicinal Si(110) surfaces

Applied surface science, 2013-02, Vol.267, p.53-57

2013

Volltextzugriff (PDF)

Structural analysis of vicinal Si(110) surfaces with various off-angles

Applied surface science, 2013-02, Vol.267, p.136-140

2013

Volltextzugriff (PDF)

Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing

Thin solid films, 2010, Vol.518 (6), p.S147-S150

2010

Volltextzugriff (PDF)

Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals II

ECS solid state letters, 2014-07, Vol.3 (9), p.P114-P115

2014

Volltextzugriff (PDF)

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates

Thin solid films, 2008-11, Vol.517 (1), p.323-326

2008

Volltextzugriff (PDF)

Doppler Broadening Spectroscopy of Positron Annihilation near Ge and Si (001) Single Crystal Surfaces

ECS solid state letters, 2013-07, Vol.2 (10), p.P89-P90

2013

Volltextzugriff (PDF)

Study of Si wafer surfaces irradiated by gas cluster ion beams

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.683-686

2007

Volltextzugriff (PDF)

Microstructures in directly bonded Si substrates

Solid-state electronics, 2009-08, Vol.53 (8), p.837-840

2009

Volltextzugriff (PDF)

Growth and Characterization of Heteroepitaxial Layers of GeSiSn Ternary Alloy

ECS transactions, 2013, Vol.50 (9), p.907-913

2013

Volltextzugriff (PDF)

(Invited) GOI Substrates: Fabrication and Characterization

ECS transactions, 2013, Vol.50 (9), p.709-725

2013

Volltextzugriff (PDF)

Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

Solid state phenomena, 2009-10, Vol.156-158, p.199-204

2009

Volltextzugriff (PDF)

Growth and crystalline properties of Ge1−x−ySnxCy ternary alloy thin films on Ge(001) substrate

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, p.145-146

2014

Volltextzugriff (PDF)

Investigation of minute strain in silicon on insulator and strained-silicon/silicon–germanium/silicon-substrate semiconductor materials using a synchrotron radiation X-ray microbeam

Diamond Light Source proceedings, 2011-01, Vol.1 (SRMS-7), Article e122

2011

Volltextzugriff (PDF)

Interface and Defect Control for Group IV Channel Engineering

ECS transactions, 2009, Vol.16 (10), p.687-698

2009

Volltextzugriff (PDF)

Oxygen transport analysis in Czochralski silicon melt by considering the oxygen evaporation from the melt surface

Journal of crystal growth, 1995-02, Vol.148 (1), p.70-78

1995

Volltextzugriff (PDF)

Oxygen transport from a silica crucible in Czochralski silicon growth

Journal of crystal growth, 1996-08, Vol.165 (4), p.362-371

1996

Volltextzugriff (PDF)

Surface modification of silicon (111) by annealing at high temperature in hydrogen

Applied physics letters, 1996-04, Vol.68 (17), p.2349-2351

1996

Volltextzugriff (PDF)

Comment on “The Effect of Hydrogen Annealing on Oxygen Precipitation Behavior and Gate Oxide Integrity in Czochralski Si Wafers” [H. Abe, I. Suzuki, and H. Koya (pp. 306–311, Vol. 144, No. 1, 1997)]

Journal of the Electrochemical Society, 1997-10, Vol.144 (10), p.3695-3695

1997

Volltextzugriff (PDF)

Oxygen precipitation in Czochralski-grown silicon wafers during hydrogen annealing

Applied physics letters, 1996-01, Vol.68 (1), p.49-50

1996

Volltextzugriff (PDF)

Melt quenching technique for direct observation of oxygen transport in the Czochralski-grown Si process

Journal of crystal growth, 1995-07, Vol.152 (4), p.266-273

1995

Volltextzugriff (PDF)

Control of oxygen concentration in heavily antimony-doped Czochralski Si crystals by ambient argon pressure

Journal of crystal growth, 1995-06, Vol.151 (3), p.291-294

1995

Volltextzugriff (PDF)

Effect of antimony-doping on the oxygen segregation coefficient in silicon crystal growth

Journal of crystal growth, 1995-04, Vol.149 (1), p.59-63

1995

Volltextzugriff (PDF)

1 – 25 von 45

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(34)
Mit Volltextzugriff
(36)

Publikationsform

Artikel
(39)
Tagungsberichte
(6)

Sprache

Englisch
(41)
Japanisch
(5)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Electric-field control of spin accumulation signals in silicon at room temperature

Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method

Formation mechanism of peculiar structures on vicinal Si(110) surfaces

Structural analysis of vicinal Si(110) surfaces with various off-angles

Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing

Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals II

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates

Doppler Broadening Spectroscopy of Positron Annihilation near Ge and Si (001) Single Crystal Surfaces

Study of Si wafer surfaces irradiated by gas cluster ion beams

Microstructures in directly bonded Si substrates

Growth and Characterization of Heteroepitaxial Layers of GeSiSn Ternary Alloy

(Invited) GOI Substrates: Fabrication and Characterization

Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

Growth and crystalline properties of Ge1−x−ySnxCy ternary alloy thin films on Ge(001) substrate

Investigation of minute strain in silicon on insulator and strained-silicon/silicon–germanium/silicon-substrate semiconductor materials using a synchrotron radiation X-ray microbeam

Interface and Defect Control for Group IV Channel Engineering

Oxygen transport analysis in Czochralski silicon melt by considering the oxygen evaporation from the melt surface

Oxygen transport from a silica crucible in Czochralski silicon growth

Surface modification of silicon (111) by annealing at high temperature in hydrogen

Comment on “The Effect of Hydrogen Annealing on Oxygen Precipitation Behavior and Gate Oxide Integrity in Czochralski Si Wafers” [H. Abe, I. Suzuki, and H. Koya (pp. 306–311, Vol. 144, No. 1, 1997)]

Oxygen precipitation in Czochralski-grown silicon wafers during hydrogen annealing

Melt quenching technique for direct observation of oxygen transport in the Czochralski-grown Si process

Control of oxygen concentration in heavily antimony-doped Czochralski Si crystals by ambient argon pressure

Effect of antimony-doping on the oxygen segregation coefficient in silicon crystal growth

Suchergebnisse filtern