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High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors

Journal of applied physics, 2005-07, Vol.98 (1), p.013530-013530-14

2005

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Preparation of anatase and rutile thin films by controlling oxygen partial pressure

Applied surface science, 2002-06, Vol.193 (1), p.287-292

2002

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The role of a radial ion-track distribution in semiconductors studied by numerical simulations

Radiation physics and chemistry (Oxford, England : 1993), 2009-12, Vol.78 (12), p.1116-1119

2009

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High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells

Applied physics letters, 2001-10, Vol.79 (15), p.2399-2401

2001

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Suppressed diffusion of implanted boron in 4H–SiC

Applied physics letters, 1999-04, Vol.74 (16), p.2292-2294

1999

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Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations

The Journal of physics and chemistry of solids, 2002-10, Vol.63 (10), p.1909-1920

2002

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Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Journal of applied physics, 2001-08, Vol.90 (3), p.1170-1178

2001

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Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic Devices

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3312-3320

2006

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Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal–Oxide–Semiconductor Field-Effect Transistors Containing Step Bunching

Japanese Journal of Applied Physics, 2006-09, Vol.45 (9R), p.6830

2006

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Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H–SiC

Physica. B, Condensed matter, 2006-04, Vol.376, p.342-345

2006

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Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons

Materials science forum, 2007-09, Vol.556-557, p.379-382

2007

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Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Microelectronic engineering, 2006, Vol.83 (1), p.17-19

2006

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Effects of proton irradiation on n+p InGaP solar cells

Journal of applied physics, 2002-03, Vol.91 (5), p.3306-3311

2002

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Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H–SiC

Applied physics letters, 1998-09, Vol.73 (10), p.1427-1429

1998

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Radiation Resistance of Wide Band Gap n + / p AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells

Japanese Journal of Applied Physics, 2007-07, Vol.46 (7L), p.L645

2007

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Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se2 Thin-Film Solar Cells

Japanese Journal of Applied Physics, 2002-01, Vol.41 (Part 2, No. 7A), p.L797-L799

2002

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Photoelectromagnetic effects on electron and proton irradiated CuInSe2 thin films

Journal of applied physics, 2003-07, Vol.94 (1), p.276-278

2003

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Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells

Applied physics letters, 2002-07, Vol.81 (1), p.64-66

2002

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PREPARATION OF TiO2 NANOPARTICLES BY PULSED LASER ABLATION: AMBIENT PRESSURE DEPENDENCE OF CRYSTALLIZATION

Jpn.J.Appl.Phys ,Part 2. Vol. 42, no. 5A, pp. L479-L481. 2003, 2003-05, Vol.42 (5A), p.L479-L481

2003

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Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams

Materials science forum, 2006-10, Vol.527-529, p.1347-1350

2006

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Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si

Journal of applied physics, 1995-01, Vol.77 (2), p.837-842

1995

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Analysis of electronic structures of 3d transition metal-doped TiO 2 based on band calculations

The Journal of physics and chemistry of solids, 2002-10, Vol.63 (10), p.1909-1920

2002

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Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions

Materials science forum, 2002-04, Vol.389-393, p.1097-1100

2002

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Investigation of Vacancy-Type Defects in P + -Implanted 6H-SiC Using Monoenergetic Positron Beams

Japanese Journal of Applied Physics, 1998-05, Vol.37 (5R), p.2422

1998

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Observation of transient current induced in silicon carbide diodes by ion irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-05, Vol.206, p.979-983

2003

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High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors

Preparation of anatase and rutile thin films by controlling oxygen partial pressure

The role of a radial ion-track distribution in semiconductors studied by numerical simulations

High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells

Suppressed diffusion of implanted boron in 4H–SiC

Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic Devices

Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal–Oxide–Semiconductor Field-Effect Transistors Containing Step Bunching

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H–SiC

Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Effects of proton irradiation on n+p InGaP solar cells

Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H–SiC

Radiation Resistance of Wide Band Gap n + / p AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells

Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se2 Thin-Film Solar Cells

Photoelectromagnetic effects on electron and proton irradiated CuInSe2 thin films

Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells

PREPARATION OF TiO2 NANOPARTICLES BY PULSED LASER ABLATION: AMBIENT PRESSURE DEPENDENCE OF CRYSTALLIZATION

Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams

Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si

Analysis of electronic structures of 3d transition metal-doped TiO 2 based on band calculations

Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions

Investigation of Vacancy-Type Defects in P + -Implanted 6H-SiC Using Monoenergetic Positron Beams

Observation of transient current induced in silicon carbide diodes by ion irradiation

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