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(0 0 6)-oriented α-Al 2O 3 films prepared in CO 2–H 2 atmosphere by laser chemical vapor deposition using a diode laser

Materials science & engineering. B, Solid-state materials for advanced technology, 2011, Vol.176 (13), p.984-989

2011

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(006)-oriented α-Al2O3 films prepared in CO2–H2 atmosphere by laser chemical vapor deposition using a diode laser

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-08, Vol.176 (13), p.984-989

2011

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A 0.00023 mm² 1.2V 0.48mW 18GHz Passive-Less Digital Wireless Transmitter with On-Chip Antenna in 22nm Bulk CMOS

2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS), 2022, p.1-2

2022

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Al-0.03wt%Fe合金におけるAl6Fe析出相の電子顕微鏡による同定

軽金属, 1978/04/30, Vol.28(4), pp.199-201

1978

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0.1-15THz generation using BNA (N-benzyl-2-methyl-4-nitroaniline) crystal

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science, 2008, p.1-2

2008

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0.1%C-2%Si-5%Mn超微細フェライト+オーステナイト鋼の短時間組織形成と力学的特性に及ぼす二相域焼鈍前組織の影響

鉄と鋼, 2019, Vol.105(2), pp.197-206

2019

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0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD

Seventh International Conference on Indium Phosphide and Related Materials, 1995, p.81-84

1995

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0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.04DE04-04DE04-6

2012

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0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4S), p.4

2012

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0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

Microwave and optical technology letters, 1996-02, Vol.11 (3), p.135-139

1996

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A 0.13μm CMOS 5GHz Fully Integrated 2x3 MIMO Transceiver IC with over 40dB Isolation

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.661-664

2007

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0.15-mu m RF CMOS technology compatible with logic CMOS forlow-voltage operation

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742

1998

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0.15-/spl mu/m RF CMOS technology compatible with logic CMOS for low-voltage operation

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742

1998

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0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742

1998

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0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V

2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), 2003, p.171-172

2003

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A 0.18-µm CMOS time-domain capacitive-sensor interface for sub-1mG MEMS accelerometers

IEICE Electronics Express, 2018, Vol.15 (2), p.20171227-20171227

2018

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A 0.2-0.5 THz heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves, 2008, p.1-2

2008

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A 0.2 - 0.5 THz single-band heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

Applied physics letters, 2008-09, Vol.93 (9), p.093508-093508-3

2008

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A 0.2–0.5THz single-band heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

Applied physics letters, 2008-09, Vol.93 (9)

2008

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0.2 mu m analog CMOS with very low noise figure at 2 GHz operation

Digest of technical papers - Symposium on VLSI Technology, 1996-01, p.132-133

1996

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0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation

1996 Symposium on VLSI Technology. Digest of Technical Papers, 1996, p.132-133

1996

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0.25-micron gate millimeter-wave ion-implanted GaAs MESFET's

IEEE electron device letters, 1989-05, Vol.10, p.186-188

1989

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A 0.25-/spl mu/m CMOS 0.9-V 100-MHz DSP core

IEEE journal of solid-state circuits, 1997-01, Vol.32 (1), p.52-61

1997

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A 0.25-μm CMOS 0.9-V 100-MHz DSP core

IEEE journal of solid-state circuits, 1997-01, Vol.32 (1), p.52-61

1997

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0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

IEEE electron device letters, 1989-05, Vol.10 (5), p.186-188

1989

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(0 0 6)-oriented α-Al 2O 3 films prepared in CO 2–H 2 atmosphere by laser chemical vapor deposition using a diode laser

(006)-oriented α-Al2O3 films prepared in CO2–H2 atmosphere by laser chemical vapor deposition using a diode laser

A 0.00023 mm² 1.2V 0.48mW 18GHz Passive-Less Digital Wireless Transmitter with On-Chip Antenna in 22nm Bulk CMOS

Al-0.03wt%Fe合金におけるAl6Fe析出相の電子顕微鏡による同定

0.1-15THz generation using BNA (N-benzyl-2-methyl-4-nitroaniline) crystal

0.1%C-2%Si-5%Mn超微細フェライト+オーステナイト鋼の短時間組織形成と力学的特性に及ぼす二相域焼鈍前組織の影響

0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD

0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

A 0.13μm CMOS 5GHz Fully Integrated 2x3 MIMO Transceiver IC with over 40dB Isolation

0.15-mu m RF CMOS technology compatible with logic CMOS forlow-voltage operation

0.15-/spl mu/m RF CMOS technology compatible with logic CMOS for low-voltage operation

0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation

0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V

A 0.18-µm CMOS time-domain capacitive-sensor interface for sub-1mG MEMS accelerometers

A 0.2-0.5 THz heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

A 0.2 - 0.5 THz single-band heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

A 0.2–0.5THz single-band heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

0.2 mu m analog CMOS with very low noise figure at 2 GHz operation

0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation

0.25-micron gate millimeter-wave ion-implanted GaAs MESFET's

A 0.25-/spl mu/m CMOS 0.9-V 100-MHz DSP core

A 0.25-μm CMOS 0.9-V 100-MHz DSP core

0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

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