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Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure

Journal of crystal growth, 2000-12, Vol.221 (1), p.345-349

2000

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Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure

IEEE journal of selected topics in quantum electronics, 1999-05, Vol.5 (3), p.721-728

1999

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Epitaxial regrowth of AlGaInP on AlGaInP grooved structure by MOVPE

Journal of crystal growth, 2000-12, Vol.221 (1), p.208-211

2000

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Monolithically integrated 780-nm-band high-power and 650-nm-band laser diodes with real refractive index guided self-aligned structure

IEEE photonics technology letters, 2001-06, Vol.13 (6), p.550-552

2001

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100-mW high-power angled-stripe superluminescent diodes with a new real refractive-index-guided self-aligned structure

IEEE journal of quantum electronics, 1996-11, Vol.32 (11), p.1981-1987

1996

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Two-dimensional analysis of self-sustained pulsation for narrow-stripe AlGaAs lasers

IEEE journal of selected topics in quantum electronics, 1995-06, Vol.1 (2), p.473-479

1995

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High power operation of real refractive index guided self-aligned AlGaInP laser diodes with window structure

Electronics letters, 1999-01, Vol.35 (25), p.2208-2209

1999

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Small-astigmatism, low-noise, and high-power self-sustained pulsation multiple-quantum-well laser diodes with a real refractive index guided self-aligned structure

Applied physics letters, 1996-12, Vol.69 (24), p.3656-3658

1996

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600 mW CW single-mode GaAlAs triple-quantum-well laser with a new index guided structure

IEEE journal of quantum electronics, 1993-06, Vol.29 (6), p.1889-1894

1993

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Growth of GaN Thin Films on Sapphire Substrate by Low Pressure MOCVD

MRS proceedings, 1997, Vol.468, Article 69

1997

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800 mW peak-power self-sustained pulsation GaAlAs laser diodes

IEEE journal of selected topics in quantum electronics, 1995-06, Vol.1 (2), p.562-568

1995

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Low operating current self-sustained pulsation GaAlAs laser diodes with a real refractive index guided structure

Applied physics letters, 1994-09, Vol.65 (10), p.1211-1212

1994

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Low-noise and high-power real refractive index guided laser array

Electronics letters, 1994-08, Vol.30 (16), p.1307-1308

1994

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High power single mode operation of long cavity GaAlAs lasers with nonabsorbing mirror buried twin ridge substrate structure

Applied physics letters, 1992-08, Vol.61 (5), p.515-516

1992

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AlGaN/GaN plasmon-resonant terahertz detectors with on-chip patch antennas

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2

2009

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Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 1999-12, Vol.38 (12R), p.6605

1999

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Structural investigation of sapphire surface after nitridation

Journal of crystal growth, 1998-06, Vol.189-190, p.254-258

1998

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Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy

Journal of applied physics, 1999-10, Vol.86 (7), p.3670-3675

1999

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Monolithically Integrated Dual-Wavelength Self-Sustained Pulsating Laser Diodes with Real Refractive Index Guided Self-Aligned Structure

Japanese Journal of Applied Physics, 2001-11, Vol.40 (11R), p.6401

2001

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Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD

Journal of crystal growth, 1996-11, Vol.169 (1), p.185-189

1996

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Reduction of beam divergence angle by low-refractive-index layers introduced to real-refractive-index-guided GaAlAs high-power laser diodes

Japanese Journal of Applied Physics, 1997-05, Vol.36 (5A), p.2676-2680

1997

Volltextzugriff (PDF)

EXAFS Study of Cation Distribution in Nickel Aluminate Ferrites

Journal of the American Ceramic Society, 1991-02, Vol.74 (2), p.314-317

1991

Volltextzugriff (PDF)

100 mW high-power angled-stripe superluminescent diodes with a new real refractive index guided self-aligned structure

Proceedings of International Electron Devices Meeting, 1995, p.567-570

1995

Volltextzugriff (PDF)

Low operating current and high temperature operation of 650 nm AlGaInP visible laser diodes with real refractive index guided self-aligned structure

Electronics letters, 1997, Vol.33 (14), p.1223

1997

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High power single mode operation of long cavityu GaAlAs lasers with nonabsorbing mirror buried twin ridge substrate structure

Applied physics letters, 1992, Vol.61 (5), p.515-516

1992

Volltextzugriff (PDF)

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Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure

Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure

Epitaxial regrowth of AlGaInP on AlGaInP grooved structure by MOVPE

Monolithically integrated 780-nm-band high-power and 650-nm-band laser diodes with real refractive index guided self-aligned structure

100-mW high-power angled-stripe superluminescent diodes with a new real refractive-index-guided self-aligned structure

Two-dimensional analysis of self-sustained pulsation for narrow-stripe AlGaAs lasers

High power operation of real refractive index guided self-aligned AlGaInP laser diodes with window structure

Small-astigmatism, low-noise, and high-power self-sustained pulsation multiple-quantum-well laser diodes with a real refractive index guided self-aligned structure

600 mW CW single-mode GaAlAs triple-quantum-well laser with a new index guided structure

Growth of GaN Thin Films on Sapphire Substrate by Low Pressure MOCVD

800 mW peak-power self-sustained pulsation GaAlAs laser diodes

Low operating current self-sustained pulsation GaAlAs laser diodes with a real refractive index guided structure

Low-noise and high-power real refractive index guided laser array

High power single mode operation of long cavity GaAlAs lasers with nonabsorbing mirror buried twin ridge substrate structure

AlGaN/GaN plasmon-resonant terahertz detectors with on-chip patch antennas

Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition

Structural investigation of sapphire surface after nitridation

Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy

Monolithically Integrated Dual-Wavelength Self-Sustained Pulsating Laser Diodes with Real Refractive Index Guided Self-Aligned Structure

Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD

Reduction of beam divergence angle by low-refractive-index layers introduced to real-refractive-index-guided GaAlAs high-power laser diodes

EXAFS Study of Cation Distribution in Nickel Aluminate Ferrites

100 mW high-power angled-stripe superluminescent diodes with a new real refractive index guided self-aligned structure

Low operating current and high temperature operation of 650 nm AlGaInP visible laser diodes with real refractive index guided self-aligned structure

High power single mode operation of long cavityu GaAlAs lasers with nonabsorbing mirror buried twin ridge substrate structure

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