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Optical and electrical characteristics of poly(3-alkylthiophene) and polydiphenylamine copolymers: Applications in light-emitting devices

Synthetic metals, 2012-12, Vol.162 (24), p.2433-2442

2012

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Thickness effects on the optical properties of layer-by-layer poly(p-phenylene vinylene) thin films and their use in energy-modulated structures

Current Applied Physics, 2012, 12(3), , pp.870-874

2012

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DFT and experimental infrared study on electrochemically synthesized poly(3-methylthiophene) (P3MT)

Journal of molecular structure, 2013-03, Vol.1036, p.102-106

2013

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Electrical and optical characteristics of n-type-doped distributed Bragg mirrors on InP

IEEE photonics technology letters, 1998-06, Vol.10 (6), p.763-765

1998

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Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Journal of luminescence, 2013-12, Vol.144, p.98-104

2013

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Correlation between emission and structural properties of poly(p-phenylene vinylene) thin films

Synthetic metals, 2013-04, Vol.170, p.25-30

2013

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Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness

Journal of luminescence, 2012-05, Vol.132 (5), p.1183-1187

2012

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Annealing temperature effects on the azodye photoisomerization processes of layer-by-layer self-assembled poly(p-phenylenevinylene)/Congo red thin films

Journal of luminescence, 2013-02, Vol.134, p.842-846

2013

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Analysis of optical properties of poly(3-methylthiophene) (P3MT) electrochemically synthesized

Synthetic metals, 2011-02, Vol.161 (3-4), p.340-347

2011

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Optically active vibrational modes in the photoluminescence line shape of BDMO-PPV films

Journal of luminescence, 2011-10, Vol.131 (10), p.2189-2194

2011

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GaNAsSb: how does it compare with other dilute III–V-nitride alloys?

Semiconductor science and technology, 2002-08, Vol.17 (8), p.778-784

2002

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Optically active vibrational modes of PPV derivatives on textile substrate

Journal of luminescence, 2013-02, Vol.134, p.374-384

2013

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Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (100) and (311)A GaAs surfaces

Physica. B, Condensed matter, 2012-06, Vol.407 (12), p.2131-2135

2012

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Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

Journal of luminescence, 2010-03, Vol.130 (3), p.460-465

2010

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Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP

Journal of applied physics, 2005-06, Vol.97 (12), p.123702-123702-6

2005

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Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells

Superlattices and microstructures, 2017-01, Vol.101, p.236-243

2017

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Influence of Al content on temperature dependence of excitonic transitions in quantum wells

The European physical journal. B, Condensed matter physics, 2001-05, Vol.21 (1), p.11-17

2001

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High reflectivity, low resistance Te doped AlGaAsSb/AlAsSb Bragg mirror

Electronics letters, 1997-04, Vol.33 (8), p.716-717

1997

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High power saturation, polarisation insensitive electroabsorption modulator with spiked shallow wells

Electronics letters, 1997-01, Vol.33 (2), p.161

1997

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Evidence for negatively charged DX-center in Si-doped AlGaAs from persistent photoconductivity measurements

Solid state communications, 1991, Vol.77 (5), p.327-330

1991

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A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP

Superlattices and microstructures, 2002-06, Vol.31 (6), p.277-283

2002

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Temperature dependence of excitonic transitions in AlxGa1 − xAs/GaAs quantum wells

Superlattices and microstructures, 2001-03, Vol.29 (3), p.225-231

2001

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Hot electrons in delta-doped GaAs(Si) layers

Solid state communications, 1990-09, Vol.75 (9), p.707-710

1990

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Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

Superlattices and microstructures, 2000-07, Vol.28 (1), p.29-33

2000

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Optical and electrical characteristics of poly(3-alkylthiophene) and polydiphenylamine copolymers: Applications in light-emitting devices

Thickness effects on the optical properties of layer-by-layer poly(p-phenylene vinylene) thin films and their use in energy-modulated structures

DFT and experimental infrared study on electrochemically synthesized poly(3-methylthiophene) (P3MT)

Electrical and optical characteristics of n-type-doped distributed Bragg mirrors on InP

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Correlation between emission and structural properties of poly(p-phenylene vinylene) thin films

Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness

Annealing temperature effects on the azodye photoisomerization processes of layer-by-layer self-assembled poly(p-phenylenevinylene)/Congo red thin films

Analysis of optical properties of poly(3-methylthiophene) (P3MT) electrochemically synthesized

Optically active vibrational modes in the photoluminescence line shape of BDMO-PPV films

GaNAsSb: how does it compare with other dilute III–V-nitride alloys?

Optically active vibrational modes of PPV derivatives on textile substrate

Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (100) and (311)A GaAs surfaces

Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP

Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells

Influence of Al content on temperature dependence of excitonic transitions in quantum wells

High reflectivity, low resistance Te doped AlGaAsSb/AlAsSb Bragg mirror

High power saturation, polarisation insensitive electroabsorption modulator with spiked shallow wells

Evidence for negatively charged DX-center in Si-doped AlGaAs from persistent photoconductivity measurements

A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP

Temperature dependence of excitonic transitions in AlxGa1 − xAs/GaAs quantum wells

Hot electrons in delta-doped GaAs(Si) layers

Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

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