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The 0 0 l fiber texture of high quality coal-tar pitch-based carbon fiber

Carbon (New York), 2006-12, Vol.44 (15), p.3364-3367

2006

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0.025-inch vs 0.035-inch guide wires for wire-guided cannulation during endoscopic retrograde cholangiopancreatography: A randomized study

World journal of gastroenterology : WJG, 2015-08, Vol.21 (30), p.9182-9188

2015

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0/1/All CSPs, Half-Integral A-Path Packing, and Linear-Time FPT Algorithms

2018 IEEE 59th Annual Symposium on Foundations of Computer Science (FOCS), 2018, p.462-473

2018

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0.1 T/D BSU TESTS OF BATTLE RIVER COAL LIQUEFACTION AND ITS COPROCESSING WITH TAR SAND BITUMENS

1991 International Conference on Coal Science Proceedings, 1991, p.822-825

1991

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A 0.13μm CMOS 5GHz Fully Integrated 2x3 MIMO Transceiver IC with over 40dB Isolation

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.661-664

2007

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A 0.15 /spl mu/m/0.6 dB-NF/sub min/ RF BiCMOS technology using cobalt silicide ground shields

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000, p.98-101

2000

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A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325), 1999, p.149-150

1999

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A 0.18-micron RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.669-675

2003

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A 0.18-[mu]m RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.669

2003

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A 0.18-mum RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.669-675

2003

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A 0.18-/spl mu/m RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.669-675

2003

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A 0.18-μm RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.669-675

2003

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A 0.23 /spl mu/m/sup 2/ double self-aligned contact cell for gigabit DRAMs with a Ge-added vertical epitaxial Si pad

International Electron Devices Meeting. Technical Digest, 1996, p.589-592

1996

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A 0.35 /spl mu/m ECL-CMOS process technology on SOI for 1 ns mega-bits SRAMs with 40 ps gate array

Proceedings of International Electron Devices Meeting, 1995, p.923-926

1995

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A 0.4-V 29-GHz-Bandwidth Power-Scalable Distributed Amplifier in 55-nm CMOS DDC Process

IEICE transactions on electronics, 2022-10, Vol.E105.C (10), p.561-564, Article 2021CTS0002

2022

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A 0.5 V 200 MHz 1-stage 32 b ALU using a body bias controlled SOI pass-gate logic

1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers, 1997, Vol.40, p.286-287

1997

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A 0.6-V 41.3-GHz Power-Scalable Sub-Sampling PLL in 55-nm CMOS DDC

IEICE transactions on electronics, 2023-10, Vol.E106.C (10), p.533-537, Article 2022CTS0001

2023

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0.6 V Supply Complementary Metal Oxide Semiconductor Amplifier Using Noise Reduction Technique of Autozeroing and Chopper Stabilization

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2252

2007

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A 0.8-mm depressed adenoma of the colon with high-grade dysplasia

Endoscopy, 2001-10, Vol.33 (10), p.891-893

2001

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A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors

IEEE microwave and wireless components letters, 2015-06, Vol.25 (6), p.397-399

2015

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A 0.9-3.5 GHz high linearity, good efficiency CMOS broadband power amplifier using stagger tuning technique

Microwave and optical technology letters, 2012-12, Vol.54 (12), p.2881-2884

2012

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0.9 /spl sim/ 2.7 /spl mu/m over one octave spanning ultrabroad supercontinuum generation based on all fiber system

Conference on Lasers and Electro-Optics, 2004. (CLEO), 2004, Vol.1, p.2 pp. vol.1

2004

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A 0.95 ps, 10 GHz, 60 mW HCN frequency-stabilized and mode-locked fiber laser at 1.55 μm

2016 Conference on Lasers and Electro-Optics (CLEO), 2016, p.1-2

2016

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The 0 + excited state of Ce 140 studied by the decay of Pr 140

Nuclear physics, 1964, Vol.56, p.625-635

1964

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The 0+ excited state of Ce140 studied by the decay of Pr140

Nuclear physics, 1964-07, Vol.56, p.625-635

1964

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The 0 0 l fiber texture of high quality coal-tar pitch-based carbon fiber

0.025-inch vs 0.035-inch guide wires for wire-guided cannulation during endoscopic retrograde cholangiopancreatography: A randomized study

0/1/All CSPs, Half-Integral A-Path Packing, and Linear-Time FPT Algorithms

0.1 T/D BSU TESTS OF BATTLE RIVER COAL LIQUEFACTION AND ITS COPROCESSING WITH TAR SAND BITUMENS

A 0.13μm CMOS 5GHz Fully Integrated 2x3 MIMO Transceiver IC with over 40dB Isolation

A 0.15 /spl mu/m/0.6 dB-NF/sub min/ RF BiCMOS technology using cobalt silicide ground shields

A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

A 0.18-micron RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

A 0.18-[mu]m RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

A 0.18-mum RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

A 0.18-/spl mu/m RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

A 0.18-μm RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

A 0.23 /spl mu/m/sup 2/ double self-aligned contact cell for gigabit DRAMs with a Ge-added vertical epitaxial Si pad

A 0.35 /spl mu/m ECL-CMOS process technology on SOI for 1 ns mega-bits SRAMs with 40 ps gate array

A 0.4-V 29-GHz-Bandwidth Power-Scalable Distributed Amplifier in 55-nm CMOS DDC Process

A 0.5 V 200 MHz 1-stage 32 b ALU using a body bias controlled SOI pass-gate logic

A 0.6-V 41.3-GHz Power-Scalable Sub-Sampling PLL in 55-nm CMOS DDC

0.6 V Supply Complementary Metal Oxide Semiconductor Amplifier Using Noise Reduction Technique of Autozeroing and Chopper Stabilization

A 0.8-mm depressed adenoma of the colon with high-grade dysplasia

A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors

A 0.9-3.5 GHz high linearity, good efficiency CMOS broadband power amplifier using stagger tuning technique

0.9 /spl sim/ 2.7 /spl mu/m over one octave spanning ultrabroad supercontinuum generation based on all fiber system

A 0.95 ps, 10 GHz, 60 mW HCN frequency-stabilized and mode-locked fiber laser at 1.55 μm

The 0 + excited state of Ce 140 studied by the decay of Pr 140

The 0+ excited state of Ce140 studied by the decay of Pr140

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