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Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Sensors (Basel, Switzerland), 2022-02, Vol.22 (4), p.1515

2022

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Nonlinear nanochannels for room temperature terahertz heterodyne detection

Semiconductor science and technology, 2013-12, Vol.28 (12), p.125024

2013

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On the effect of δ-doping in self-switching diodes

Applied physics letters, 2014-09, Vol.105 (9), p.Article Number: 093505

2014

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A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I – V Curve and S-Parameters

IEEE transactions on microwave theory and techniques, 2024-01, Vol.72 (1), p.415-420

2024

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Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

IEEE transactions on microwave theory and techniques, 2023-07, Vol.71 (7), p.1-0

2023

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High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

IEEE transactions on microwave theory and techniques, 2024-06, Vol.72 (6), p.3753-3758

2024

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Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4556-4562

2024

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Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs

IEEE transactions on electron devices, 2024-07, p.1-0

2024

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Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime

IEEE transactions on microwave theory and techniques, 2024, p.1-5

2024

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Exploring Digital Logic Design Using Ballistic Deflection Transistors Through Monte Carlo Simulations

IEEE transactions on nanotechnology, 2011-11, Vol.10 (6), p.1337-1346

2011

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Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

IEEE transactions on microwave theory and techniques, 2024, p.1-0

2024

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Phonon black-body radiation limit for heat dissipation in electronics

Nature materials, 2015-02, Vol.14 (2), p.187-192

2015

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Room Temperature Direct and Heterodyne Detection of 0.28-0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.353-359

2016

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On the Asymmetry of Resistive Switching Transitions

Electronics (Basel), 2024-07, Vol.13 (13), p.2639

2024

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Searching for THz Gunn oscillations in GaN planar nanodiodes

Journal of applied physics, 2012-06, Vol.111 (11), p.113705-113705-9

2012

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Experiences on the Design, Creation, and Analysis of Multimedia Content to Promote Active Learning

Journal of science education and technology, 2019-10, Vol.28 (5), p.445-451

2019

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GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95016

2018

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Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations

Solid-state electronics, 2011-02, Vol.56 (1), p.120-129

2011

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Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

Semiconductor science and technology, 2017-03, Vol.32 (3), p.35011

2017

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Operation of GaN Planar Nanodiodes as THz Detectors and Mixers

IEEE transactions on terahertz science and technology, 2014-11, Vol.4 (6), p.670-677

2014

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0.69 THz room temperature heterodyne detection using GaN nanodiodes

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12006

2015

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A Study of Geometry Effects on the Performance of Ballistic Deflection Transistor

IEEE transactions on nanotechnology, 2010-11, Vol.9 (6), p.723-733

2010

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Ballistic deflection transistor very high frequency modeling

2016 74th Annual Device Research Conference (DRC), 2016, p.1-2

2016

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Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

Journal of Physics: Conference Series, 2015-10, Vol.647 (1), p.12039

2015

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Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Nonlinear nanochannels for room temperature terahertz heterodyne detection

On the effect of δ-doping in self-switching diodes

A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I – V Curve and S-Parameters

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs

Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime

Exploring Digital Logic Design Using Ballistic Deflection Transistors Through Monte Carlo Simulations

Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

Phonon black-body radiation limit for heat dissipation in electronics

Room Temperature Direct and Heterodyne Detection of 0.28-0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels

On the Asymmetry of Resistive Switching Transitions

Searching for THz Gunn oscillations in GaN planar nanodiodes

Experiences on the Design, Creation, and Analysis of Multimedia Content to Promote Active Learning

GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations

Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

Operation of GaN Planar Nanodiodes as THz Detectors and Mixers

0.69 THz room temperature heterodyne detection using GaN nanodiodes

A Study of Geometry Effects on the Performance of Ballistic Deflection Transistor

Ballistic deflection transistor very high frequency modeling

Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

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