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Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Study of surface charges in ballistic deflection transistors

Nanotechnology, 2015-12, Vol.26 (48), p.485202-485202

2015

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Phonon black-body radiation limit for heat dissipation in electronics

Nature materials, 2015-02, Vol.14 (2), p.187-192

2015

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Monte Carlo analysis of noise spectra in self-switching nanodiodes

Journal of applied physics, 2008-01, Vol.103 (2), p.024502-024502-6

2008

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Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12068

2015

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On the effect of δ-doping in self-switching diodes

Applied physics letters, 2014-09, Vol.105 (9), p.Article Number: 093505

2014

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Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012082

2009

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Monte Carlo analysis of Gunn oscillations in narrow and wide band-gap asymmetric nanodiodes

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012018

2009

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Optimization of Ballistic Deflection Transistors by Monte Carlo Simulations

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12066

2015

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Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature

Semiconductor science and technology, 2010-12, Vol.25 (12), p.125013-1-14

2010

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Ultrahigh responsivity of optically active, semiconducting asymmetric nano-channel diodes

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12013

2015

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Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

Journal of applied physics, 2024-01, Vol.135 (4)

2024

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Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

Semiconductor science and technology, 2014-11, Vol.29 (11), p.115032

2014

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Searching for THz Gunn oscillations in GaN planar nanodiodes

Journal of applied physics, 2012-06, Vol.111 (11), p.113705-113705-9

2012

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Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

Nanotechnology, 2023-08, Vol.34 (32), p.325201

2023

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Low temperature memory effects in AlGaN/GaN nanochannels

Applied physics letters, 2023-09, Vol.123 (10)

2023

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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Applied physics letters, 2023-09, Vol.123 (12)

2023

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Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Nanotechnology, 2020-10, Vol.31 (40), p.405204-405204

2020

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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

Journal of applied physics, 2022-10, Vol.132 (13)

2022

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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.1-0

2023

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IEEE_Xplore

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Journal of applied physics, 2024-01, Vol.135 (1)

2024

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Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

Semiconductor science and technology, 2007-06, Vol.22 (6), p.663-670

2007

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Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

IEEE transactions on electron devices, 2024-06, Vol.71 (8), p.1-0

2024

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IEEE_Xplore

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Study of surface charges in ballistic deflection transistors

Phonon black-body radiation limit for heat dissipation in electronics

Monte Carlo analysis of noise spectra in self-switching nanodiodes

Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes

On the effect of δ-doping in self-switching diodes

Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

Monte Carlo analysis of Gunn oscillations in narrow and wide band-gap asymmetric nanodiodes

Optimization of Ballistic Deflection Transistors by Monte Carlo Simulations

Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature

Ultrahigh responsivity of optically active, semiconducting asymmetric nano-channel diodes

Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length

Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

Searching for THz Gunn oscillations in GaN planar nanodiodes

Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

Low temperature memory effects in AlGaN/GaN nanochannels

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

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