UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 3.937.003

Sortiert nach

0

Physical review. C, Nuclear physics, 1990-05, Vol.41 (5), p.2414-2417

1990

Volltextzugriff (PDF)

0,0-DIALKYL DITHIOPHOSPHATE COMPLEXES OF DIPHENYL ANTIMONY (III)

Phosphorus, sulfur, and silicon and the related elements, 1989-10, Vol.45 (3-4), p.145-150

1989

Volltextzugriff (PDF)

The 0 +-0 − transitions in the A=16 system and meson-exchange currents

Physics letters. B, 1984-01, Vol.140 (1), p.11-16

1984

Volltextzugriff (PDF)

0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

Electronics letters, 2018-02, Vol.54 (4), p.213-215

2018

Volltextzugriff (PDF)

A 0.004mm/sup 2/ Portable Multiphase Clock Generator Tile for 1.2GHz RISC Microprocessor

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers, 2006, p.104-105

2006

Volltextzugriff (PDF)

0.01-178.40 GHz wideband spectrum analyzer

2005 15th International Crimean Conference Microwave & Telecommunication Technology, 2005, Vol.2, p.757-758 Vol. 2

2005

Volltextzugriff (PDF)

0.018pm/°C athermal silicon nitride ring resonator by polymer cladding

2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013, p.1-2

2013

Volltextzugriff (PDF)

0.03-cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets

2002 32nd European Microwave Conference, 2002, p.1-4

2002

Volltextzugriff (PDF)

0.03- mu m gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f sub(T) and 2 S/mm extrinsic transconductance

IEEE electron device letters, 1999-01, Vol.20 (5), p.206-208

1999

Volltextzugriff (PDF)

An 0.03 mu m gate-length enhancement-mode InAlAs/InGaAs/InPMODFET' s with 300 GHz f(T) and 2 S/mm extrinsictransconductance

IEEE electron device letters, 1999-05, Vol.20 (5), p.206-208

1999

Volltextzugriff (PDF)

An 0.03 mu m gate-length enhancement-mode InAlAs/InGaAs/InPMODFET''s with 300 GHz f(T) and 2 S/mm extrinsictransconductance

IEEE electron device letters, 1999-05, Vol.20 (5), p.206-208

1999

Volltextzugriff (PDF)

An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f/sub T/ and 2 S/mm extrinsic transconductance

IEEE electron device letters, 1999-05, Vol.20 (5), p.206-208

1999

Volltextzugriff (PDF)

An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz fT and 2 S/mm extrinsic transconductance

IEEE electron device letters, 1999-05, Vol.20 (5), p.206-208

1999

Volltextzugriff (PDF)

A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

2010 International Electron Devices Meeting, 2010, p.27.5.1-27.5.4

2010

Volltextzugriff (PDF)

A 0.03mm/sup 2/ 9mW Wide-Range Duty-CycleCorrecting False-Lock-Free DLL with Fully Balanced Charge-Pump for DDR Interface

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.1286-1295

2006

Volltextzugriff (PDF)

0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laser

IEEE photonics technology letters, 1989-12, Vol.1 (12), p.452-454

1989

Volltextzugriff (PDF)

0. 04 Hz relative optical-frequency stability in a 1. 5. mu. m distributed-Bragg-reflector (DBR) laser

IEEE photonics technology letters, 1989-12, Vol.1:12

1989

Volltextzugriff (PDF)

0.04 Hz relative optical-frequency stability in a 1.5 mum distributed-Bragg-reflector (DBR) laser

IEEE photonics technology letters, 1989-12, Vol.1 (12), p.452-454

1989

Volltextzugriff (PDF)

In 0.05 Ga 0.95 As/Al 0.3 Ga 0.7 As quantum wells grown on a (411)A -oriented In 0.06 Ga 0.94 As ternary substrate by molecular beam epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000, Vol.18 (3), p.1576-1578

2000

Volltextzugriff (PDF)

In 0.05 Ga 0.95 As/Al 0.3 Ga 0.7 As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2000-05, Vol.18 (3), p.1576-1578

2000

Volltextzugriff (PDF)

A 0.05-mm2 110-μW 10-b self-calibrating successive approximation ADC core in 0.18-μm CMOS

2007 IEEE Asian Solid-State Circuits Conference, 2007, p.224-227

2007

Volltextzugriff (PDF)

0.05 mu m (3 sigma ) overlay accuracy through-the-lens alignment in an excimer laser lithography system

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992, Vol.31 (12B), p.4161-4166

1992

Volltextzugriff (PDF)

0.05 percent betamethasone dipropionate in optimized cream vehicle for psoriasis

Cutis (New York, N.Y.), 1989-02, Vol.43 (2), p.178

1989

Volltextzugriff (PDF)

0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects

Japanese Journal of Applied Physics, 1994, Vol.33 (1B), p.798-803

1994

Volltextzugriff (PDF)

0.05 μm (3σ) overlay accuracy through-the-lens alignment in an excimer laser lithography system: MicroProcess

Japanese journal of applied physics, 1992, Vol.31 (12B), p.4161-4166

1992

Volltextzugriff (PDF)

1 – 25 von 3.937.003

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(3.134.873)
Mit Volltextzugriff
(3.456.249)

Publikationsform

14 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(3.766.678)
Japanisch
(536.617)
Französisch
(68.988)
Spanisch
(51.147)
Russisch
(23.135)
Portugiesisch
(12.224)
Chinesisch
(9.962)
Koreanisch
(5.950)
Deutsch
(4.865)
Katalanisch
(4.650)
Hebräisch
(2.515)
Norwegisch
(1.318)
Italienisch
(773)
Niederländisch
(707)
Ukrainisch
(677)
Schwedisch
(615)
Türkisch
(443)
Tschechisch
(317)
Arabisch
(256)
Polnisch
(221)

15 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(2.467.466)
Life Sciences & Biomedicine
(1.241.408)
Physical Sciences
(804.938)
Humans
(778.381)
Technology
(768.639)
Biological And Medical Sciences
(526.430)
Male
(477.148)
Physics
(458.489)
Female
(441.701)
Animals
(440.328)
Exact Sciences And Technology
(430.196)
Engineering
(353.247)
Medical Sciences
(328.050)
Chemistry
(294.948)
Materials Science
(261.143)
Adult
(251.693)
Middle Aged
(240.115)
Fundamental And Applied Biological Sciences. Psychology
(220.380)
Applied Sciences
(207.943)
Materials Science, Multidisciplinary
(189.835)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

IngentaConnect_期刊（NSTL购买）
(1.614.618)
EZB Electronic Journals Library
(1.278.692)
MEDLINE
(1.236.509)
Access via ScienceDirect (Elsevier)
(906.277)
Journals@Ovid
(758.028)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(605.653)
NUS Single-Journal Subscriptions
(528.101)
IngentaConnect Journals
(492.918)
Wiley-Blackwell Journals
(454.550)
SpringerLink_现刊
(347.942)
IEL
(313.327)
Wiley Online Library
(305.348)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(251.037)
Access via Taylor & Francis
(141.851)
Oxford journals
(141.158)
Taylor & Francis Online
(121.597)
Taylor & Francis
(119.040)
JSTOR
(104.936)
Ebook Central Perpetual and DDA
(94.370)
eBooks on EBSCOhost
(88.282)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Cheminform
(30.456)
Applied Physics Letters
(23.826)
The Journal Of Biological Chemistry
(21.485)
Physical Review Letters
(21.198)
Journal Of Applied Physics
(20.884)
Japanese Journal Of Applied Physics
(15.747)
Journal Of Biological Chemistry/the journal Of Biological Chemistry
(15.702)
Biochemical And Biophysical Research Communications
(15.108)
Journal Of Physics. Conference Series
(14.754)
Physical Review. B, Condensed Matter
(13.879)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

0

0,0-DIALKYL DITHIOPHOSPHATE COMPLEXES OF DIPHENYL ANTIMONY (III)

The 0 +-0 − transitions in the A=16 system and meson-exchange currents

0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

A 0.004mm/sup 2/ Portable Multiphase Clock Generator Tile for 1.2GHz RISC Microprocessor

0.01-178.40 GHz wideband spectrum analyzer

0.018pm/°C athermal silicon nitride ring resonator by polymer cladding

0.03-cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets

0.03- mu m gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f sub(T) and 2 S/mm extrinsic transconductance

An 0.03 mu m gate-length enhancement-mode InAlAs/InGaAs/InPMODFET' s with 300 GHz f(T) and 2 S/mm extrinsictransconductance

An 0.03 mu m gate-length enhancement-mode InAlAs/InGaAs/InPMODFET''s with 300 GHz f(T) and 2 S/mm extrinsictransconductance

An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f/sub T/ and 2 S/mm extrinsic transconductance

An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz fT and 2 S/mm extrinsic transconductance

A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

A 0.03mm/sup 2/ 9mW Wide-Range Duty-CycleCorrecting False-Lock-Free DLL with Fully Balanced Charge-Pump for DDR Interface

0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laser

0. 04 Hz relative optical-frequency stability in a 1. 5. mu. m distributed-Bragg-reflector (DBR) laser

0.04 Hz relative optical-frequency stability in a 1.5 mum distributed-Bragg-reflector (DBR) laser

In 0.05 Ga 0.95 As/Al 0.3 Ga 0.7 As quantum wells grown on a (411)A -oriented In 0.06 Ga 0.94 As ternary substrate by molecular beam epitaxy

In 0.05 Ga 0.95 As/Al 0.3 Ga 0.7 As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy

A 0.05-mm2 110-μW 10-b self-calibrating successive approximation ADC core in 0.18-μm CMOS

0.05 mu m (3 sigma ) overlay accuracy through-the-lens alignment in an excimer laser lithography system

0.05 percent betamethasone dipropionate in optimized cream vehicle for psoriasis

0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects

0.05 μm (3σ) overlay accuracy through-the-lens alignment in an excimer laser lithography system: MicroProcess

Suchergebnisse filtern