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Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors

Journal of applied physics, 2020-01, Vol.127 (4)

2020

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Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors

Micromachines (Basel), 2023-04, Vol.14 (5), p.977

2023

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Time- and Temperature-dependent Degradation of p-GaN Gate HEMTs under Forward Gate Voltage Stress

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023, 23(6), 114, pp.352-358

2023

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Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Micromachines (Basel), 2021-04, Vol.12 (4), p.400

2021

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Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.581-586

2024

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Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films

Materials, 2022-03, Vol.15 (6), p.2097

2022

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Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Micromachines (Basel), 2019-10, Vol.10 (11), p.723

2019

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Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.258-262

2017

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Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

Results in physics, 2021-06, Vol.25, p.104279, Article 104279

2021

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Operation of NO₂ Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 °C

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2021, 21(6), 102, pp.412-417

2021

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Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2689-2698

2012

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Proton-irradiation Effects on Charge Trapping-related Instability of Normally-off AlGaN/GaN Recessed MISHFETs

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2019, 19(2), 86, pp.214-219

2019

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Reduction of Spurious Tones and Phase Noise in Dual-Loop OEO by Loop-Gain Control

IEEE photonics technology letters, 2015-07, Vol.27 (13), p.1391-1393

2015

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High Performance NO₂ Gas Sensor Based on Pd-AlGaN/GaN High Electron Mobility Transistors with Thin AlGaN Barrier

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(2), 92, pp.170-176

2020

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Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature

Micromachines (Basel), 2021-05, Vol.12 (5), p.537

2021

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Proton Bombardment Effects on Normally- off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.3362-3368

2015

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Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs

Journal of Electromagnetic Engineering and Science, 2022, 22(3), , pp.291-295

2022

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Improved Stability of AlGaN/GaN Heterojunction Schottky-diode-type Hydrogen Sensor Using Constant Current Source Operation

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(5), 95, pp.430-435

2020

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Characteristics of Recess Structure Tunneling Field Effect Transistor for High on Current Drivability

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2018, 18(3), 81, pp.360-366

2018

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Parasitic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2018, 18(1), 79, pp.78-83

2018

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Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

IEEE electron device letters, 2003-07, Vol.24 (7), p.421-423

2003

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Undoped AlGaN/GaN HEMTs for microwave power amplification

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.479-485

2001

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Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs

Cryogenics (Guildford), 2018-07, Vol.93, p.51-55

2018

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Energy-Dependent Degradation Characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2 MeV Proton Irradiation

ECS journal of solid state science and technology, 2018, Vol.7 (9), p.Q159-Q163

2018

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Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors

Time- and Temperature-dependent Degradation of p-GaN Gate HEMTs under Forward Gate Voltage Stress

Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation

Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

Operation of NO₂ Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 °C

Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

Proton-irradiation Effects on Charge Trapping-related Instability of Normally-off AlGaN/GaN Recessed MISHFETs

Reduction of Spurious Tones and Phase Noise in Dual-Loop OEO by Loop-Gain Control

High Performance NO₂ Gas Sensor Based on Pd-AlGaN/GaN High Electron Mobility Transistors with Thin AlGaN Barrier

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature

Proton Bombardment Effects on Normally- off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs

Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs

Improved Stability of AlGaN/GaN Heterojunction Schottky-diode-type Hydrogen Sensor Using Constant Current Source Operation

Characteristics of Recess Structure Tunneling Field Effect Transistor for High on Current Drivability

Parasitic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

Undoped AlGaN/GaN HEMTs for microwave power amplification

Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs

Energy-Dependent Degradation Characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2 MeV Proton Irradiation

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