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A Compact Model for ISPP of 3-D Charge-Trap NAND Flash Memories

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3095-3101

2020

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Investigation and Compact Modeling of Hot-Carrier Injection for Read Disturbance in 3-D NAND Flash Memory

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2778-2784

2020

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A NIR-Light-Driven Twisted and Coiled Polymer Actuator with a PEDOT-Tos/Nylon-6 Composite for Durable and Remotely Controllable Artificial Muscle

Polymers, 2022-01, Vol.14 (3), p.432

2022

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Accurate Lifetime Estimation of Sub-20-nm NAND Flash Memory

IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.659-667

2016

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Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.262-267

2024

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A More Practical Indicator of MAC Operational Power Efficiency inside Memory-based Synapse Array

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2024, 24(1), 115, pp.47-54

2024

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A simple parameter extraction method of spiral on-chip inductors

IEEE transactions on electron devices, 2005-09, Vol.52 (9), p.1976-1981

2005

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Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.524-529

2024

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Analysis on Temperature Dependence of Hot Carrier Degradation by Mechanism Separation

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.321-325

2020

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Analysis of the Effect of Residual Holes on Lateral Migration During the Retention Operation in 3-D NAND Flash Memory

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6094-6099

2021

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Temporal Noise Analysis and Reduction Method in CMOS Image Sensor Readout Circuit

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2489-2495

2009

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Analysis and Compact Modeling of Fast Detrapping From Bandgap-Engineered Tunneling Oxide in 3-D NAND Flash Memories

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3339-3345

2021

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Modeling of Grain Boundary Barrier Height for Undoped Polycrystalline Silicon Channel in Macaroni MOSFETs

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2590-2596

2022

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Analysis and Modeling of Program Disturbance by Hot Carrier Injection in 3D NAND Flash Memory Using TCAD

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2019, 19(6), 90, pp.571-576

2019

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Modeling and Parameter Extraction for the Series Resistance in Thin-Film Transistors

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.431-440

2009

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Analysis of Failure Mechanisms and Extraction of Activation Energies (E) in 21-nm nand Flash Cells

IEEE electron device letters, 2013-01, Vol.34 (1), p.48-50

2013

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Activation Energies (E) of Failure Mechanisms in Advanced NAND Flash Cells for Different Generations and Cycling

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1099-1107

2013

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Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.35-45

2012

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Investigation and SPICE Compact Model of Spacer Region for Static Characteristics of 3-D NAND Flash Memories

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4158-4165

2020

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Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration Method

IEEE transactions on electron devices, 2008-10, Vol.55 (10), p.2779-2784

2008

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Modeling of Threshold Voltage Shift by Neighboring Transistors for Macaroni Channel MOSFETs in Series

IEEE transactions on computer-aided design of integrated circuits and systems, 2024-01, Vol.43 (1), p.1-1

2024

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Separate Extraction of Gate Resistance Components in RF MOSFETs

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1459-1463

2007

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A simple wide-band on-chip inductor model for silicon-based RF ICs

IEEE transactions on microwave theory and techniques, 2003-09, Vol.51 (9), p.2023-2028

2003

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A 55dB SNR with 240Hz frame scan rate mutual capacitor 30×24 touch-screen panel read-out IC using code-division multiple sensing technique

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.388-389

2013

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Study on self-heating effect and lifetime in vertical-channel field effect transistor

Microelectronics and reliability, 2021-04, Vol.119, p.114093, Article 114093

2021

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A Compact Model for ISPP of 3-D Charge-Trap NAND Flash Memories

Investigation and Compact Modeling of Hot-Carrier Injection for Read Disturbance in 3-D NAND Flash Memory

A NIR-Light-Driven Twisted and Coiled Polymer Actuator with a PEDOT-Tos/Nylon-6 Composite for Durable and Remotely Controllable Artificial Muscle

Accurate Lifetime Estimation of Sub-20-nm NAND Flash Memory

Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory

A More Practical Indicator of MAC Operational Power Efficiency inside Memory-based Synapse Array

A simple parameter extraction method of spiral on-chip inductors

Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs

Analysis on Temperature Dependence of Hot Carrier Degradation by Mechanism Separation

Analysis of the Effect of Residual Holes on Lateral Migration During the Retention Operation in 3-D NAND Flash Memory

Temporal Noise Analysis and Reduction Method in CMOS Image Sensor Readout Circuit

Analysis and Compact Modeling of Fast Detrapping From Bandgap-Engineered Tunneling Oxide in 3-D NAND Flash Memories

Modeling of Grain Boundary Barrier Height for Undoped Polycrystalline Silicon Channel in Macaroni MOSFETs

Analysis and Modeling of Program Disturbance by Hot Carrier Injection in 3D NAND Flash Memory Using TCAD

Modeling and Parameter Extraction for the Series Resistance in Thin-Film Transistors

Analysis of Failure Mechanisms and Extraction of Activation Energies (E) in 21-nm nand Flash Cells

Activation Energies (E) of Failure Mechanisms in Advanced NAND Flash Cells for Different Generations and Cycling

Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

Investigation and SPICE Compact Model of Spacer Region for Static Characteristics of 3-D NAND Flash Memories

Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration Method

Modeling of Threshold Voltage Shift by Neighboring Transistors for Macaroni Channel MOSFETs in Series

Separate Extraction of Gate Resistance Components in RF MOSFETs

A simple wide-band on-chip inductor model for silicon-based RF ICs

A 55dB SNR with 240Hz frame scan rate mutual capacitor 30×24 touch-screen panel read-out IC using code-division multiple sensing technique

Study on self-heating effect and lifetime in vertical-channel field effect transistor

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