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A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.487-496

2006

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A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293

2005

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A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005, Vol.40 (1), p.293-300

2005

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A 0.18 /spl mu/m 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.40-512 Vol.1

2004

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A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293-300

2005

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A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293-300

2005

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A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)

First edition, 2004

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A 0.6 V 12 b 10 MS/s Low-Noise Asynchronous SAR-Assisted Time-Interleaved SAR (SATI-SAR) ADC

IEEE journal of solid-state circuits, 2016-08, Vol.51 (8), p.1826-1839

2016

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Li 0.98 Ni 0.7 Ti 0.3 O 1.92 cathode materials fabricated by thermal synthesis of Ni/Li/TiNi film

Physica scripta, 2007-12, Vol.T129, p.218-221

2007

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0646 Abnormal Event-related Electroencephalograms In Patients With Rapid-eye Movement (REM) Sleep Behavior Disorder (RBD) During Involuntary Visuospatial Attention Task: A Possible Progression Marker In Neurodegenerative Disease

Sleep (New York, N.Y.), 2019-04, Vol.42 (Supplement_1), p.A258-A258

2019

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1.1 mW Single-Mode Output Power of All-Monolithic 1.3 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2005-01, Vol.44 (1L), p.L101

2005

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1,2,3,4,6-Penta-O-galloly-beta-D-glucose Suppresses Hypoxia-Induced Accumulation of Hypoxia-Inducible Factor-1[alpha] and Signaling in LNCaP Prostate Cancer Cells

Biological & pharmaceutical bulletin, 2010-11, Vol.33 (11), p.1835

2010

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1,2,3,4,6-Penta-O-galloly-beta-D-glucose Suppresses Hypoxia-Induced Accumulation of Hypoxia-Inducible Factor-1.ALPHA. and Signaling in LNCaP Prostate Cancer Cells

Biological & pharmaceutical bulletin, 2010, Vol.33 (11), p.1835-1840

2010

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1,2,3,4,6-Penta-O-galloly-beta-D-glucose Suppresses Hypoxia-Induced Accumulation of Hypoxia-Inducible Factor-1α and Signaling in LNCaP Prostate Cancer Cells

Biological and Pharmaceutical Bulletin, 2010/11/01, Vol.33(11), pp.1835-1840

2010

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A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM

IEEE journal of solid-state circuits, 2003-11, Vol.38 (11), p.1943-1951

2003

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A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme

IEEE journal of solid-state circuits, 2013-01, Vol.48 (1), p.168-177

2013

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1-26 GHz high power p-i-n diode switch

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.1, p.505-508 vol.1

2000

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A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications

2017 Symposium on VLSI Circuits, 2017, p.C194-C195

2017

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1,3-Propanesultone as an effective functional additive to enhance the electrochemical performance of over-lithiated layered oxides

RSC advances, 2014-01, Vol.4 (37), p.19172-19176

2014

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1.5 kA Bi-2223 HTS current leads for SMES magnets

IEEE transactions on applied superconductivity, 2001-03, Vol.11 (1), p.2547-2550

2001

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A 1.5V, 1.6Gb/s/pin, 1Gb DDR3 SDRAM with an Address Queuing Scheme and Bang-Bang Jitter Reduced DLL Scheme

2007 IEEE Symposium on VLSI Circuits, 2007, p.182-183

2007

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A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology

IEEE journal of solid-state circuits, 2012-01, Vol.47 (1), p.131-140

2012

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A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology

2011 IEEE International Solid-State Circuits Conference, 2011, p.502-504

2011

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A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18 /spl mu/m 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)

A 0.6 V 12 b 10 MS/s Low-Noise Asynchronous SAR-Assisted Time-Interleaved SAR (SATI-SAR) ADC

Li 0.98 Ni 0.7 Ti 0.3 O 1.92 cathode materials fabricated by thermal synthesis of Ni/Li/TiNi film

0646 Abnormal Event-related Electroencephalograms In Patients With Rapid-eye Movement (REM) Sleep Behavior Disorder (RBD) During Involuntary Visuospatial Attention Task: A Possible Progression Marker In Neurodegenerative Disease

1.1 mW Single-Mode Output Power of All-Monolithic 1.3 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

1,2,3,4,6-Penta-O-galloly-beta-D-glucose Suppresses Hypoxia-Induced Accumulation of Hypoxia-Inducible Factor-1[alpha] and Signaling in LNCaP Prostate Cancer Cells

1,2,3,4,6-Penta-O-galloly-beta-D-glucose Suppresses Hypoxia-Induced Accumulation of Hypoxia-Inducible Factor-1.ALPHA. and Signaling in LNCaP Prostate Cancer Cells

1,2,3,4,6-Penta-O-galloly-beta-D-glucose Suppresses Hypoxia-Induced Accumulation of Hypoxia-Inducible Factor-1α and Signaling in LNCaP Prostate Cancer Cells

A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM

A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme

1-26 GHz high power p-i-n diode switch

A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications

1,3-Propanesultone as an effective functional additive to enhance the electrochemical performance of over-lithiated layered oxides

1.5 kA Bi-2223 HTS current leads for SMES magnets

A 1.5V, 1.6Gb/s/pin, 1Gb DDR3 SDRAM with an Address Queuing Scheme and Bang-Bang Jitter Reduced DLL Scheme

A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology

A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology

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