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Ultrasensitive, Biocompatible, Quantum-Dot-Embedded Silica Nanoparticles for Bioimaging

Advanced functional materials, 2012-05, Vol.22 (9), p.1843-1849

2012

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Evaluation of Neutron Radiation Impact for 1200V class 4H-SiC MOSFET at Gate Switching Mode with TCAD Simulation

IEEE transactions on nuclear science, 2023-05, p.1-1

2023

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Deformation and Flow Characterization of Hybrid Woven Composite Material

Mechanics of Composite, Hybrid and Multifunctional Materials, Volume 5, 2024, p.1-8

2024

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Evaluation of Neutron Radiation Impact for 1200-V Class 4H-SiC MOSFET at Gate Switching Mode With TCAD Simulation

IEEE transactions on nuclear science, 2023-08, Vol.70 (8), p.1852-1860

2023

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New Real-Time Fluence Correction Method With SRAM Dosimeter for High Accuracy Single-Event Upset Evaluation

IEEE transactions on nuclear science, 2023-05, Vol.70 (5), p.815-822

2023

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Perovskite Emitters as a Platform Material for Down‐Conversion Applications

Advanced materials technologies, 2020-10, Vol.5 (10), p.n/a

2020

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Enhancing leakage suppression in carbon-rich silicon junctions

IEEE electron device letters, 2006-06, Vol.27 (6), p.442-444

2006

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Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si/sub 1-y/C/sub y/ incorporation

IEEE electron device letters, 2005-04, Vol.26 (4), p.252-254

2005

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An anomalous device degradation of SOI narrow width devices caused by STI edge influence

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.605-612

2002

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13‐2: Remarkable Reduction of Efficiency Roll‐off for Quantum‐dot Light Emitting Diodes by Optimized Shell Layer

SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.157-160

2017

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Progressive Degradation Without Physical Failure During Mounting Due to Soft Overstress in Compound HBT for RF, Mobile, and Automotive Applications

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.10C.4-1-10C.4-6

2022

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A Game Engine-Based Visualizer for ns-3 Simulations

2024 International Conference on Information Networking (ICOIN), 2024, p.363-366

2024

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Characterization issues of gate geometry in multifinger structure for RF-SOI MOSFETs

IEEE electron device letters, 2002-05, Vol.23 (5), p.288-290

2002

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Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

IEEE electron device letters, 2001-09, Vol.22 (9), p.449-451

2001

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Time-Varying Body Instability and Low-Frequency Noise Characteristics of Mini-Field-Dual-Body Silicon-on-Insulator Structure for Analog-Digital Mixed-Mode Circuits

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 3A), p.1279-1283

2002

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Reduction of Reverse Short-Channel Effect in High-Energy Implanted Retrograde Well

Journal of the Korean Physical Society, 2002-04, Vol.40 (4), p.649

2002

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Quantum Dots: Ultrasensitive, Biocompatible, Quantum-Dot-Embedded Silica Nanoparticles for Bioimaging (Adv. Funct. Mater. 9/2012)

Advanced functional materials, 2012-05, Vol.22 (9), p.1774-1774

2012

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A dual body SOI structure for mixed analog-digital mode circuits

IEEE transactions on electron devices, 2000-08, Vol.47 (8), p.1617-1623

2000

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Effects of Shallow Trench Isolation on Silicon-on-Insulator Devices for Mixed Signal Processing

Journal of the Korean Physical Society, 2002, 40(4), , pp.653-657

2002

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Design Consideration of Gate Shape in SOI MOSFETs for RF Applications

Journal of the Korean Physical Society, 2002, 40(4), , pp.658-662

2002

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Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2023, p.1-3

2023

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Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si 1− y C y in silicon

Thin solid films, 2006, Vol.504 (1), p.132-135

2006

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Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si sub(1-y)C sub(y) incorporation

IEEE electron device letters, 2005-01, Vol.26 (4)

2005

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Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

Applied physics letters, 2003-11, Vol.83 (20), p.4169-4171

2003

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Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation

IEEE electron device letters, 2005-04, Vol.26 (4), p.252-254

2005

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Ultrasensitive, Biocompatible, Quantum-Dot-Embedded Silica Nanoparticles for Bioimaging

Evaluation of Neutron Radiation Impact for 1200V class 4H-SiC MOSFET at Gate Switching Mode with TCAD Simulation

Deformation and Flow Characterization of Hybrid Woven Composite Material

Evaluation of Neutron Radiation Impact for 1200-V Class 4H-SiC MOSFET at Gate Switching Mode With TCAD Simulation

New Real-Time Fluence Correction Method With SRAM Dosimeter for High Accuracy Single-Event Upset Evaluation

Perovskite Emitters as a Platform Material for Down‐Conversion Applications

Enhancing leakage suppression in carbon-rich silicon junctions

Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si/sub 1-y/C/sub y/ incorporation

An anomalous device degradation of SOI narrow width devices caused by STI edge influence

13‐2: Remarkable Reduction of Efficiency Roll‐off for Quantum‐dot Light Emitting Diodes by Optimized Shell Layer

Progressive Degradation Without Physical Failure During Mounting Due to Soft Overstress in Compound HBT for RF, Mobile, and Automotive Applications

A Game Engine-Based Visualizer for ns-3 Simulations

Characterization issues of gate geometry in multifinger structure for RF-SOI MOSFETs

Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

Time-Varying Body Instability and Low-Frequency Noise Characteristics of Mini-Field-Dual-Body Silicon-on-Insulator Structure for Analog-Digital Mixed-Mode Circuits

Reduction of Reverse Short-Channel Effect in High-Energy Implanted Retrograde Well

Quantum Dots: Ultrasensitive, Biocompatible, Quantum-Dot-Embedded Silica Nanoparticles for Bioimaging (Adv. Funct. Mater. 9/2012)

A dual body SOI structure for mixed analog-digital mode circuits

Effects of Shallow Trench Isolation on Silicon-on-Insulator Devices for Mixed Signal Processing

Design Consideration of Gate Shape in SOI MOSFETs for RF Applications

Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si 1− y C y in silicon

Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si sub(1-y)C sub(y) incorporation

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation

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