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Facile Surface Functionalization of Nanodiamonds

Langmuir, 2010-03, Vol.26 (5), p.3685-3689

2010

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Nomenclature for the C60-Ih and C70-D5h(6) fullerenes (IUPAC Recommendations 2002)

Pure and applied chemistry, 2002-01, Vol.74 (4), p.629-695

2002

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Formation of microtwins in TmP/GaAs heterostructures

Journal of crystal growth, 2003, Vol.247 (1), p.77-83

2003

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Synthesis of new benzimidazole–coumarin conjugates as anti-hepatitis C virus agents

Antiviral research, 2008-02, Vol.77 (2), p.157-162

2008

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Transistor action in GaP/TmP/GaAs heterostructure

Electronics letters, 2001-08, Vol.37 (18), p.1142-1143

2001

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Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy

Journal of materials research, 2001-11, Vol.16 (11), p.3266-3273

2001

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High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

IEEE journal of quantum electronics, 1999-10, Vol.35 (10), p.1535-1541

1999

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Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures

Journal of electronic materials, 1998-05, Vol.27 (5), p.405-408

1998

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Synthesis and Biological Evaluation of Purine-Containing Butenolides

Journal of medicinal chemistry, 2001-05, Vol.44 (11), p.1749-1757

2001

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Negative differential resistance (NDR) frequency conversion with gain

IEEE transactions on microwave theory and techniques, 1993-05, Vol.41 (5), p.890-893

1993

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High temperature UHF SSVD™ oscillators and power amplifiers

2018 IEEE Aerospace Conference, 2018, p.1-7

2018

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Optical switching in the semiconductor directional coupler with saturated gain

Journal of applied physics, 1989-03, Vol.65 (5), p.2137-2139

HWU, R. J

1989

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Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (/spl lambda/=0.98 /spl mu/m)

IEEE journal of selected topics in quantum electronics, 2000-07, Vol.6 (4), p.577-584

2000

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Effect of rapid thermal annealing on planar-doped pseudomorphic InGaAs high electron mobility transistor structures

Applied physics letters, 1991-05, Vol.58 (20), p.2273-2275

1991

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Theoretical analysis and FDTD simulation of GaAs nonlinear transmission lines

IEEE transactions on microwave theory and techniques, 1999-07, Vol.47 (7), p.1083-1091

1999

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Beam focusing in semiconductor directional couplers with saturated gain

Journal of applied physics, 1989-06, Vol.65 (12), p.4529-4531

HWU, R. J

1989

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Epitaxial dysprosium phosphide grown by gas-source and solid-source MBE on gallium arsenide substrates

Journal of crystal growth, 1996-07, Vol.164 (1), p.285-290

1996

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Limitations of the back-to-back barrier-intrinsic-n+ (BIN) diode frequency tripler

IEEE transactions on electron devices, 1992-08, Vol.39 (8), p.1805-1810

1992

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Enhancement of high-temperature high-frequency performance of GaAs-based FETs by the high-temperature electronic technique

IEEE transactions on electron devices, 1999-01, Vol.46 (1), p.24-31

1999

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Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing

IEEE transactions on electron devices, 1992-01, Vol.39 (1), p.50-55

1992

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Molecular beam epitaxy growth of TmP/GaAs and transistor action in GaP/TmP/GaAs heterostructures

IEEE transactions on electron devices, 2001-10, Vol.48 (10), p.2205-2209

2001

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Silicon reagents in chemical transformations: the concept of ‘counterattack reagent’

Pure and applied chemistry, 1999-03, Vol.71 (3), p.445-451

1999

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Effect of exponentially graded base doping on the performance of GaAs/AlGaAs heterojunction bipolar transistors

IEEE electron device letters, 1991-05, Vol.12 (5), p.194-196

1991

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A straightforward method for the FDTD analysis of quasi-optical arrays of active devices

IEEE transactions on microwave theory and techniques, 1999-02, Vol.47 (2), p.189-197

1999

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Watt-level millimeter-wave monolithic diode-grid frequency multipliers

Review of scientific instruments, 1988-08, Vol.59 (8), p.1577-1579

1988

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Facile Surface Functionalization of Nanodiamonds

Nomenclature for the C60-Ih and C70-D5h(6) fullerenes (IUPAC Recommendations 2002)

Formation of microtwins in TmP/GaAs heterostructures

Synthesis of new benzimidazole–coumarin conjugates as anti-hepatitis C virus agents

Transistor action in GaP/TmP/GaAs heterostructure

Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures

Synthesis and Biological Evaluation of Purine-Containing Butenolides

Negative differential resistance (NDR) frequency conversion with gain

High temperature UHF SSVD™ oscillators and power amplifiers

Optical switching in the semiconductor directional coupler with saturated gain

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (/spl lambda/=0.98 /spl mu/m)

Effect of rapid thermal annealing on planar-doped pseudomorphic InGaAs high electron mobility transistor structures

Theoretical analysis and FDTD simulation of GaAs nonlinear transmission lines

Beam focusing in semiconductor directional couplers with saturated gain

Epitaxial dysprosium phosphide grown by gas-source and solid-source MBE on gallium arsenide substrates

Limitations of the back-to-back barrier-intrinsic-n+ (BIN) diode frequency tripler

Enhancement of high-temperature high-frequency performance of GaAs-based FETs by the high-temperature electronic technique

Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing

Molecular beam epitaxy growth of TmP/GaAs and transistor action in GaP/TmP/GaAs heterostructures

Silicon reagents in chemical transformations: the concept of ‘counterattack reagent’

Effect of exponentially graded base doping on the performance of GaAs/AlGaAs heterojunction bipolar transistors

A straightforward method for the FDTD analysis of quasi-optical arrays of active devices

Watt-level millimeter-wave monolithic diode-grid frequency multipliers

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