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Accurate Lifetime Estimation of Sub-20-nm NAND Flash Memory

IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.659-667

2016

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Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

IEEE electron device letters, 2014-01, Vol.35 (1), p.51-53

2014

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Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory

IEEE electron device letters, 2013-09, Vol.34 (9), p.1139-1141

2013

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Probability Level Dependence of Failure Mechanisms in Sub-20 nm NAND Flash Memory

IEEE electron device letters, 2014-03, Vol.35 (3), p.348-350

2014

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Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5472-5478

2020

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Analysis of read disturbance mechanism in retention of sub-20 nm NAND flash memory

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DD03-4

2015

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Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.58-61

2014

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Effect of pulsed electric fields on dielectric breakdown in Cu damascene interconnects

Applied physics express, 2015-03, Vol.8 (3), p.31502

2015

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Effect of dynamic stress on off leakage of small-dimension pMOSFETs at high temperature

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EC06-4

2014

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Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-5

2024

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Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-6

2024

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V-Ramp VBD Prediction Method Using OCD-Spectrum and Deep-Learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-6

2024

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Modeling of apparent activation energy and lifetime estimation in NAND flash memory

Semiconductor science and technology, 2015-12, Vol.30 (12), p.125006

2015

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Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAM

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-8

2023

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Machine Learning Based V-ramp VBD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-4

2023

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Hygro-thermo-mechanical analysis and failure prediction in electronic packages by using peridynamics

2014 IEEE 64th Electronic Components and Technology Conference (ECTC), 2014, p.973-982

2014

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The reproducibility improving method of systemlevel ESD test through operating program workload analysis

2016 URSI Asia-Pacific Radio Science Conference (URSI AP-RASC), 2016, p.921-924

2016

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Separation of Comer Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

IEEE electron device letters, 2014, Vol.35 (1), p.51-53

2014

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Correction to "Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory" [Sep 13 1139-1141]

IEEE electron device letters, 2013-10, Vol.34 (10), p.1345-1345

2013

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System-level ESD failure analysis depending on source generators

2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC), 2016, Vol.1, p.289-291

2016

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Effect of reverse body bias on hot-electron-induced punchthrough reliability of pMOSFETs with thin gate dielectric at high temperatures

Japanese Journal of Applied Physics, 2016-06, Vol.55 (6), p.64101

2016

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Equivalent acceleration assessment of JEDEC moisture sensitivity levels using peridynamics

2015 IEEE 65th Electronic Components and Technology Conference (ECTC), 2015, p.1518-1523

2015

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Prediction of Moisture Absorption Characteristics under Normal/Accelerated Preconditioning Condition in Multi Chip Packages

2024 IEEE 74th Electronic Components and Technology Conference (ECTC), 2024, p.254-258

2024

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Chip package interaction in micro bump and TSV structure

2012 IEEE 62nd Electronic Components and Technology Conference, 2012, p.315-318

2012

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Investigation of Acceleration factors for SnAgCu-Bi Solder Joints under various temperature cycling test conditions

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, p.846-851

2023

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Accurate Lifetime Estimation of Sub-20-nm NAND Flash Memory

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory

Probability Level Dependence of Failure Mechanisms in Sub-20 nm NAND Flash Memory

Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories

Analysis of read disturbance mechanism in retention of sub-20 nm NAND flash memory

Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory

Effect of pulsed electric fields on dielectric breakdown in Cu damascene interconnects

Effect of dynamic stress on off leakage of small-dimension pMOSFETs at high temperature

Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence

Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology

V-Ramp VBD Prediction Method Using OCD-Spectrum and Deep-Learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk

Modeling of apparent activation energy and lifetime estimation in NAND flash memory

Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAM

Machine Learning Based V-ramp VBD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk

Hygro-thermo-mechanical analysis and failure prediction in electronic packages by using peridynamics

The reproducibility improving method of systemlevel ESD test through operating program workload analysis

Separation of Comer Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

Correction to "Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory" [Sep 13 1139-1141]

System-level ESD failure analysis depending on source generators

Effect of reverse body bias on hot-electron-induced punchthrough reliability of pMOSFETs with thin gate dielectric at high temperatures

Equivalent acceleration assessment of JEDEC moisture sensitivity levels using peridynamics

Prediction of Moisture Absorption Characteristics under Normal/Accelerated Preconditioning Condition in Multi Chip Packages

Chip package interaction in micro bump and TSV structure

Investigation of Acceleration factors for SnAgCu-Bi Solder Joints under various temperature cycling test conditions

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