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Annealing effect of low-temperature (<150°C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Journal of the Society for Information Display, 2011-09, Vol.19 (9), p.623-626

2011

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Effect of In Situ Hydrogen Annealing on Dielectric Property of a Low Temperature Silicon Nitride Layer in a Bottom-Gate Nanocrystalline Silicon TFT by Catalytic CVD

ECS transactions, 2010, Vol.28 (1), p.395-399

2010

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High-rate, low-temperature deposition of multifunctional nano-crystalline silicon nitride films

Journal of Information Display, 2010, 11(3), , pp.109-112

2010

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P-93: Silicon Nanocrystals Embedded in Silicon-rich Silicon Nitride Films for Application of Light Emitting Diodes in Flexible Display

SID International Symposium Digest of technical papers, 2010-05, Vol.41 (1), p.1595-1598

2010

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Nanocrystalline silicon films deposited with a modulated hydrogen dilution ratio by catalytic CVD at 200 °C

Current applied physics, 2009-03, Vol.9 (2), p.e108-e110

2009

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Effect of Atomic Hydrogen in SiN x Films for Gate Dielectric of Silicon-Based TFTs Fabricated at a Low-Temperature(≤150 °) by Cat-CVD

ECS transactions, 2011, Vol.35 (31), p.73-76

2011

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The Hysteresis Characteristics of Low Temperature (≤ 200 °) Silicon Nanocrystals Embedded in Silicon-Rich Silicon Nitride Films

ECS transactions, 2011, Vol.35 (18), p.47-52

2011

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Electrical Properties of Silicon-Rich Silicon Carbide Films Prepared by Using Catalytic Chemical Vapor Deposition

ECS transactions, 2010, Vol.28 (3), p.61-64

2010

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Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications

ECS transactions, 2009, Vol.25 (10), p.105-109

2009

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The Characterization of Bottom-gate Thin Film Transistors adapted Nanocrystalline Silicon as Active Layer by Catalytic CVD at Low Temperature

ECS transactions, 2009, Vol.25 (3), p.259-262

2009

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High-rate, Low-temperature Deposition of Multifunctional Nano-crystalline Silicon Nitride Films

Journal of Information Display, 2010, Vol.11 (3), p.109-112

2010

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Effect of Composition on Electrical Properties of Multifunctional Silicon Nitride Films Deposited at Temperatures below 200

Korean Journal of Metals and Materials, 2012-04, Vol.50 (4), p.331-337

2012

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Nanocrystalline silicon films deposited with a modulated hydrogen dilution ratio by catalytic CVD at 200

Current Applied Physics, 2009, 9(2), , pp.108-110

2009

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Excimer Laser Annealing Effects of Silicon-rich Silicon Nitride Films Prepared by Using Catalytic Chemical Vapor Deposition

ECS transactions, 2009, Vol.25 (10), p.111-116

2009

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The Hysteresis Characteristics of Low Temperature ({less than or equal to} 200 °) Silicon Nanocrystals Embedded in Silicon-Rich Silicon Nitride Films

Meeting abstracts (Electrochemical Society), 2011-03, Vol.MA2011-01 (19), p.1259-1259

2011

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Effect of Atomic Hydrogen in SiN x Films for Gate Dielectric of Silicon-Based TFTs Fabricated at a Low-Temperature({less than or equal to} 150 °) by Cat-CVD

Meeting abstracts (Electrochemical Society), 2011-03, Vol.MA2011-01 (2), p.62-62

2011

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Structure Changes of Amorphous Silicon Carbide Films by Mixture Gas Ratio and Filament Temperature on Cat-CVD

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (1), p.88-88

2010

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Electrical Properties of Silicon-Rich Silicon Carbide Films Prepared by Using Catalytic Chemical Vapor Deposition

Meeting abstracts (Electrochemical Society), 2010-02, Vol.MA2010-01 (20), p.1084-1084

2010

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Effect of In Situ Hydrogen Annealing on Dielectric Property of a Low Temperature Silicon Nitride Layer in a Bottom-Gate Nanocrystalline Silicon TFT by Catalytic CVD

Meeting abstracts (Electrochemical Society), 2010-02, Vol.MA2010-01 (17), p.967-967

2010

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Characteristics of Silicon Nanocrystals Embedded in the Silicon Nitride Films Deposited by PE-CVD for Optoelectronics Applications

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (1), p.86-86

2010

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Characteristics of Low-Temperature ({less than or equal to}200 {degree sign}C) Cat-CVD Silicon Nitride Films Annealed In Situ with Atomic Hydrogen for Gate Dielectrics on Flexible Substrates

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (1), p.80-80

2010

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Characteristics of In Situ Hydrogen Treated SiNx films for Gate Dielectric of Silicon-Based Bottom Gate TFTs Fabricated at a Low-Temperature({less than or equal to}150 °) by Cat-CVD

Meeting abstracts (Electrochemical Society), 2011-08, Vol.MA2011-02 (2), p.41-41

2011

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Optical Sensitivity on Capacitance Characteristics of Silicon Rich Silicon Nitride Films Containing Silicon Nanocrystals Prepared by Cat-CVD

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (1), p.84-84

2010

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Excimer Laser Annealing Effects of Silicon-Rich Silicon Nitride Films Prepared by Using Catalytic Chemical Vapor Deposition

Meeting abstracts (Electrochemical Society), 2009-07, Vol.MA2009-02 (27), p.2228-2228

2009

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Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications

Meeting abstracts (Electrochemical Society), 2009-07, Vol.MA2009-02 (27), p.2227-2227

2009

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Annealing effect of low-temperature (<150°C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Effect of In Situ Hydrogen Annealing on Dielectric Property of a Low Temperature Silicon Nitride Layer in a Bottom-Gate Nanocrystalline Silicon TFT by Catalytic CVD

High-rate, low-temperature deposition of multifunctional nano-crystalline silicon nitride films

P-93: Silicon Nanocrystals Embedded in Silicon-rich Silicon Nitride Films for Application of Light Emitting Diodes in Flexible Display

Nanocrystalline silicon films deposited with a modulated hydrogen dilution ratio by catalytic CVD at 200 °C

Effect of Atomic Hydrogen in SiN x Films for Gate Dielectric of Silicon-Based TFTs Fabricated at a Low-Temperature(≤150 °) by Cat-CVD

The Hysteresis Characteristics of Low Temperature (≤ 200 °) Silicon Nanocrystals Embedded in Silicon-Rich Silicon Nitride Films

Electrical Properties of Silicon-Rich Silicon Carbide Films Prepared by Using Catalytic Chemical Vapor Deposition

Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications

The Characterization of Bottom-gate Thin Film Transistors adapted Nanocrystalline Silicon as Active Layer by Catalytic CVD at Low Temperature

High-rate, Low-temperature Deposition of Multifunctional Nano-crystalline Silicon Nitride Films

Effect of Composition on Electrical Properties of Multifunctional Silicon Nitride Films Deposited at Temperatures below 200

Nanocrystalline silicon films deposited with a modulated hydrogen dilution ratio by catalytic CVD at 200

Excimer Laser Annealing Effects of Silicon-rich Silicon Nitride Films Prepared by Using Catalytic Chemical Vapor Deposition

The Hysteresis Characteristics of Low Temperature ({less than or equal to} 200 °) Silicon Nanocrystals Embedded in Silicon-Rich Silicon Nitride Films

Effect of Atomic Hydrogen in SiN x Films for Gate Dielectric of Silicon-Based TFTs Fabricated at a Low-Temperature({less than or equal to} 150 °) by Cat-CVD

Structure Changes of Amorphous Silicon Carbide Films by Mixture Gas Ratio and Filament Temperature on Cat-CVD

Electrical Properties of Silicon-Rich Silicon Carbide Films Prepared by Using Catalytic Chemical Vapor Deposition

Effect of In Situ Hydrogen Annealing on Dielectric Property of a Low Temperature Silicon Nitride Layer in a Bottom-Gate Nanocrystalline Silicon TFT by Catalytic CVD

Characteristics of Silicon Nanocrystals Embedded in the Silicon Nitride Films Deposited by PE-CVD for Optoelectronics Applications

Characteristics of Low-Temperature ({less than or equal to}200 {degree sign}C) Cat-CVD Silicon Nitride Films Annealed In Situ with Atomic Hydrogen for Gate Dielectrics on Flexible Substrates

Characteristics of In Situ Hydrogen Treated SiNx films for Gate Dielectric of Silicon-Based Bottom Gate TFTs Fabricated at a Low-Temperature({less than or equal to}150 °) by Cat-CVD

Optical Sensitivity on Capacitance Characteristics of Silicon Rich Silicon Nitride Films Containing Silicon Nanocrystals Prepared by Cat-CVD

Excimer Laser Annealing Effects of Silicon-Rich Silicon Nitride Films Prepared by Using Catalytic Chemical Vapor Deposition

Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications

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