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Graphene–silicon phase modulators with gigahertz bandwidth

Nature photonics, 2018-01, Vol.12 (1), p.40-44

2018

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High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Nanoscale, 2015-05, Vol.7 (17), p.7896-7905

2015

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Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

Solid-state electronics, 2013-05, Vol.83, p.50-55

2013

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Complex effective index in graphene-silicon waveguides

Optics express, 2016-12, Vol.24 (26), p.29984-29993

2016

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Impact of MoS2 layer transfer on electrostatics of MoS2/SiO2 interface

Nanotechnology, 2019-02, Vol.30 (5), p.055702-055702

2019

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Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs

Solid-state electronics, 2012-06, Vol.72, p.82-87

2012

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Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures

Journal of physics. D, Applied physics, 2021-07, Vol.54 (29), p.295101

2021

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Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization

Nanoscale research letters, 2017-04, Vol.12 (1), p.283-283, Article 283

2017

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Integration challenges of copper Through Silicon Via (TSV) metallization for 3D-stacked IC integration

Microelectronic engineering, 2011-05, Vol.88 (5), p.745-748

2011

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Development and Validation of an Ultrasensitive LC-MS/MS Method for the Quantification of Melatonin in Human Saliva

Journal of the American Society for Mass Spectrometry, 2023-06, Vol.34 (6), p.1056-1064

2023

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Processing Stability of Monolayer WS2 on SiO2

Nano express, 2021-06, Vol.2 (2)

2021

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The fate of the (reactive) primary ion: Sputtering and desorption

Applied surface science, 2008-12, Vol.255 (4), p.1206-1214

2008

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Medicines raw materials used in compounding medicines: an update of the legislation

Journal de pharmacie de Belgique, 2010-03 (1), p.16

2010

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Impact of the Ge concentration on the Ge-ionisation probability and the matrix sputter yield for a SiGe matrix under oxygen irradiation

Applied surface science, 2004-06, Vol.231, p.708-712

2004

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The influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacks

Applied surface science, 2004-06, Vol.231-232, p.552-555

2004

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Errors in near-surface and interfacial profiling of boron and arsenic

Applied surface science, 2004-06, Vol.231, p.618-631

2004

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Band alignment at interfaces of few-monolayer MoS2 with SiO2 and HfO2

Microelectronic engineering, 2015-11, Vol.147, p.294-297

2015

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On the reliability of SIMS depth profiles through HfO2-stacks

Applied surface science, 2004-06, Vol.231-232, p.569-573

2004

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Impact of MoS 2 layer transfer on electrostatics of MoS 2 /SiO 2 interface

Nanotechnology, 2019-02, Vol.30 (5), p.055702

2019

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Energy and angular dependence of the sputter yield and ionization yield of Ge bombarded by O 2

Applied surface science, 2004-06, Vol.231, p.693-697

2004

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Novel architecture to boost the vertical tunneling in Tunnel Field Effect Transistors

IEEE 2011 International SOI Conference, 2011, p.1-2

2011

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ToF-SIMS profiling of HfO2/Si stacks: influence of sputtering condition of profile shape

Applied surface science, 2004-06, Vol.231-232, p.574-580

2004

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Energy and angular dependence of the sputter yield and ionization yield of Ge bombarded by O2

Applied surface science, 2004-06, Vol.231-232, p.693-697

2004

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Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS 2 Films Grown on SiO 2 by Mo Sulfurization

Nanoscale research letters, 2017-12, Vol.12 (1), p.283

2017

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Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS^sub 2^ Films Grown on SiO2 by Mo Sulfurization

Nanoscale research letters, 2017-04, Vol.12 (1), p.1

2017

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Graphene–silicon phase modulators with gigahertz bandwidth

High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

Complex effective index in graphene-silicon waveguides

Impact of MoS2 layer transfer on electrostatics of MoS2/SiO2 interface

Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs

Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures

Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization

Integration challenges of copper Through Silicon Via (TSV) metallization for 3D-stacked IC integration

Development and Validation of an Ultrasensitive LC-MS/MS Method for the Quantification of Melatonin in Human Saliva

Processing Stability of Monolayer WS2 on SiO2

The fate of the (reactive) primary ion: Sputtering and desorption

Medicines raw materials used in compounding medicines: an update of the legislation

Impact of the Ge concentration on the Ge-ionisation probability and the matrix sputter yield for a SiGe matrix under oxygen irradiation

The influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacks

Errors in near-surface and interfacial profiling of boron and arsenic

Band alignment at interfaces of few-monolayer MoS2 with SiO2 and HfO2

On the reliability of SIMS depth profiles through HfO2-stacks

Impact of MoS 2 layer transfer on electrostatics of MoS 2 /SiO 2 interface

Energy and angular dependence of the sputter yield and ionization yield of Ge bombarded by O 2

Novel architecture to boost the vertical tunneling in Tunnel Field Effect Transistors

ToF-SIMS profiling of HfO2/Si stacks: influence of sputtering condition of profile shape

Energy and angular dependence of the sputter yield and ionization yield of Ge bombarded by O2

Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS 2 Films Grown on SiO 2 by Mo Sulfurization

Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS^sub 2^ Films Grown on SiO2 by Mo Sulfurization

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