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A CMOS silicon spin qubit

Nature communications, 2016-11, Vol.7 (1), p.13575-13575, Article 13575

2016

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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Nature communications, 2019-07, Vol.10 (1), p.2776-6, Article 2776

2019

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Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification

Physical review letters, 2020-02, Vol.124 (6), p.067701-067701, Article 067701

2020

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A single hole spin with enhanced coherence in natural silicon

Nature nanotechnology, 2022-10, Vol.17 (10), p.1072-1077

2022

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Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

IEEE electron device letters, 2019-05, Vol.40 (5), p.784-787

2019

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Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box

Physical review. X, 2023-01, Vol.13 (1), p.011023, Article 011023

2023

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Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots

Physical review letters, 2018-07, Vol.121 (2), p.027701-027701, Article 027701

2018

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Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3682-3688

2018

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Pauli spin blockade in CMOS double quantum dot devices

Physica Status Solidi. B: Basic Solid State Physics, 2017-03, Vol.254 (3), p.np-n/a

2017

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Stability of Symmetrical Comb-Drive Actuator

Journal of physics. Conference series, 2019-11, Vol.1407 (1), p.12087

2019

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Experimental Investigation of Hole Transport in Strained Si1―xGex/SOI pMOSFETs—Part I: Scattering Mechanisms in Long-Channel Devices

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.316-325

2012

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99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Journal of crystal growth, 2019-03, Vol.509, p.1-7

2019

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Quantum Dot-Based Frequency Multiplier

PRX quantum, 2023-06, Vol.4 (2), p.020346, Article 020346

2023

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Emmêler & démêler la parole: Approche pluridisciplinaire de la relation de soin

2018

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Valley population of donor states in highly strained silicon

Materials for quantum technology, 2022-06, Vol.2 (2), p.25002

2022

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Considerations for efficient contact resistivity reduction via Fermi Level depinning - impact of MIS contacts on 10nm node nMOSFET DC characteristics

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T116-T117

2015

Volltextzugriff (PDF)

Experimental Investigation of Hole Transport in Strained \hbox\hbox/\hbox pMOSFETs-Part I: Scattering Mechanisms in Long-Channel Devices

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.316-325

2012

Volltextzugriff (PDF)

In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation

Solid-state electronics, 2011-03, Vol.57 (1), p.67-72

2011

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High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

Solid-state electronics, 2009-07, Vol.53 (7), p.723-729

2009

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High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

Solid-state electronics, 2011-05, Vol.59 (1), p.2-7

2011

Volltextzugriff (PDF)

High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T50-T51

2015

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Strain measurement for the semiconductor industry with nm-scale resolution by dark field electron holography and nanobeam electron diffraction

Journal of physics. Conference series, 2011-11, Vol.326 (1), p.012025-4

2011

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High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications

Solid-state electronics, 2022-08, Vol.194, p.108301, Article 108301

2022

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GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

IEEE electron device letters, 2010-03, Vol.31 (3), p.234-236

2010

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A CMOS silicon spin qubit

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification

A single hole spin with enhanced coherence in natural silicon

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Pauli spin blockade in CMOS double quantum dot devices

Stability of Symmetrical Comb-Drive Actuator

Experimental Investigation of Hole Transport in Strained Si1―xGex/SOI pMOSFETs—Part I: Scattering Mechanisms in Long-Channel Devices

99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Quantum Dot-Based Frequency Multiplier

Emmêler & démêler la parole: Approche pluridisciplinaire de la relation de soin

Valley population of donor states in highly strained silicon

Considerations for efficient contact resistivity reduction via Fermi Level depinning - impact of MIS contacts on 10nm node nMOSFET DC characteristics

Experimental Investigation of Hole Transport in Strained \hbox\hbox/\hbox pMOSFETs-Part I: Scattering Mechanisms in Long-Channel Devices

In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation

High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator

Strain measurement for the semiconductor industry with nm-scale resolution by dark field electron holography and nanobeam electron diffraction

High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications

GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

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