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A CMOS silicon spin qubit

Nature communications, 2016-11, Vol.7 (1), p.13575-13575, Article 13575

2016

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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Nature communications, 2019-07, Vol.10 (1), p.2776-6, Article 2776

2019

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Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification

Physical review letters, 2020-02, Vol.124 (6), p.067701-067701, Article 067701

2020

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A single hole spin with enhanced coherence in natural silicon

Nature nanotechnology, 2022-10, Vol.17 (10), p.1072-1077

2022

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Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

IEEE electron device letters, 2019-05, Vol.40 (5), p.784-787

2019

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Contact-Free MEMS Devices for Reliable and Low-Power Logic Operations

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2938-2943

2021

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Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box

Physical review. X, 2023-01, Vol.13 (1), p.011023, Article 011023

2023

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Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots

Physical review letters, 2018-07, Vol.121 (2), p.027701-027701, Article 027701

2018

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Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3682-3688

2018

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Pauli spin blockade in CMOS double quantum dot devices

Physica Status Solidi. B: Basic Solid State Physics, 2017-03, Vol.254 (3), p.np-n/a

2017

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Stability of Symmetrical Comb-Drive Actuator

Journal of physics. Conference series, 2019-11, Vol.1407 (1), p.12087

2019

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Experimental Investigation of Hole Transport in Strained Si1―xGex/SOI pMOSFETs—Part I: Scattering Mechanisms in Long-Channel Devices

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.316-325

2012

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99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Journal of crystal growth, 2019-03, Vol.509, p.1-7

2019

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Quantum Dot-Based Frequency Multiplier

PRX quantum, 2023-06, Vol.4 (2), p.020346, Article 020346

2023

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Emmêler & démêler la parole: Approche pluridisciplinaire de la relation de soin

2018

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Valley population of donor states in highly strained silicon

Materials for quantum technology, 2022-06, Vol.2 (2), p.25002

2022

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Considerations for efficient contact resistivity reduction via Fermi Level depinning - impact of MIS contacts on 10nm node nMOSFET DC characteristics

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T116-T117

2015

Volltextzugriff (PDF)

Experimental Investigation of Hole Transport in Strained \hbox\hbox/\hbox pMOSFETs-Part I: Scattering Mechanisms in Long-Channel Devices

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.316-325

2012

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In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation

Solid-state electronics, 2011-03, Vol.57 (1), p.67-72

2011

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High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

Solid-state electronics, 2009-07, Vol.53 (7), p.723-729

2009

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High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

Solid-state electronics, 2011-05, Vol.59 (1), p.2-7

2011

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High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T50-T51

2015

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Strain measurement for the semiconductor industry with nm-scale resolution by dark field electron holography and nanobeam electron diffraction

Journal of physics. Conference series, 2011-11, Vol.326 (1), p.012025-4

2011

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High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications

Solid-state electronics, 2022-08, Vol.194, p.108301, Article 108301

2022

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A CMOS silicon spin qubit

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification

A single hole spin with enhanced coherence in natural silicon

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Contact-Free MEMS Devices for Reliable and Low-Power Logic Operations

Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Pauli spin blockade in CMOS double quantum dot devices

Stability of Symmetrical Comb-Drive Actuator

Experimental Investigation of Hole Transport in Strained Si1―xGex/SOI pMOSFETs—Part I: Scattering Mechanisms in Long-Channel Devices

99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Quantum Dot-Based Frequency Multiplier

Emmêler & démêler la parole: Approche pluridisciplinaire de la relation de soin

Valley population of donor states in highly strained silicon

Considerations for efficient contact resistivity reduction via Fermi Level depinning - impact of MIS contacts on 10nm node nMOSFET DC characteristics

Experimental Investigation of Hole Transport in Strained \hbox\hbox/\hbox pMOSFETs-Part I: Scattering Mechanisms in Long-Channel Devices

In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation

High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator

Strain measurement for the semiconductor industry with nm-scale resolution by dark field electron holography and nanobeam electron diffraction

High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications

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