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Phase‐Dependent Phonon Heat Transport in Nanoscale Gallium Oxide Thin Films

Small (Weinheim an der Bergstrasse, Germany), 2024-05, Vol.20 (21), p.e2309961-n/a

2024

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Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors

Thin solid films, 2014-08, Vol.565, p.19-24

2014

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Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-07, Vol.41 (4)

2023

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Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor

Journal of physics. D, Applied physics, 2013-09, Vol.46 (38)

2013

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Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD

Materials science in semiconductor processing, 2023-03, Vol.156, p.107289, Article 107289

2023

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Raman spectroscopy of silicon with nanostructured surface

Optik (Stuttgart), 2022-05, Vol.257, p.168869, Article 168869

2022

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Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

Microelectronic engineering, 2011-07, Vol.88 (7), p.1514-1516

2011

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Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes

Semiconductor science and technology, 2012-07, Vol.27 (7)

2012

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ZrO2/InAlN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Jpn J Appl Phys, 2013-08, Vol.52 (8), p.08JN07-08JN07-4

2013

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Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts

Applied surface science, 2018-12, Vol.461, p.48-53

2018

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Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current

Journal of crystal growth, 2013-11, Vol.382, p.61-66

2013

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Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD

Materials, 2023-01, Vol.16 (1), p.20

2023

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Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers

Applied surface science, 2019-03, Vol.471, p.686-693

2019

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Creation of Two‐Dimensional Electron Gas and Role of Surface Donors in III‐N Metal‐Oxide‐Semiconductor High‐Electron Mobility Transistors

Physica status solidi. A, Applications and materials science, 2018-12, Vol.215 (24), p.n/a

2018

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Si-Based Metal–Insulator–Semiconductor Structures with RuO2–(IrO2) Films for Photoelectrochemical Water Oxidation

ACS applied energy materials, 2021-10, Vol.4 (10), p.11162-11172

2021

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Characterization of MIS photoanode with a thin SiO2 layer for photoelectrochemical water splitting

AIP Conference Proceedings, 2019, Vol.2131 (1)

2019

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Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes

ACS applied materials & interfaces, 2014-02, Vol.6 (4), p.2486-2492

2014

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Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation

Journal of Electrical Engineering, 2021-06, Vol.72 (3), p.203-207

2021

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ZrO sub(2)/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8S), p.08JN07-08JN07

2013

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Invited: Liquid-injection MOCVD-grown Ga2O3 on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties

2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2023, p.1-4

2023

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Thermal Stability of Ru Gate Electrode on HfSiO Dielectric

MRS proceedings, 2006, Vol.917, Article 0917-E05-02

2006

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Atomic layer deposition of high-permittivity TiO 2 dielectrics with low leakage current on RuO 2 in TiCl 4 -based processes

Semiconductor science and technology, 2012-07, Vol.27 (7), p.74007

2012

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Structure and Thermal Stability of ε/κ-Ga 2 O 3 Films Deposited by Liquid-Injection MOCVD

Materials, 2022-12, Vol.16 (1)

2022

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Structure and Thermal Stability of ε/κ-Ga[sub.2]O[sub.3] Films Deposited by Liquid-Injection MOCVD

Materials, 2022-12, Vol.16 (1)

2022

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Development and characterisation of photoelectrochemical MIS structures with RuO 2 /TiO 2 gate stacs for water oxidation

Journal of Electrical Engineering, 2021-06, Vol.72 (3), p.203-207

2021

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Phase‐Dependent Phonon Heat Transport in Nanoscale Gallium Oxide Thin Films

Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor

Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD

Raman spectroscopy of silicon with nanostructured surface

Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes

ZrO2/InAlN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts

Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current

Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD

Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers

Creation of Two‐Dimensional Electron Gas and Role of Surface Donors in III‐N Metal‐Oxide‐Semiconductor High‐Electron Mobility Transistors

Si-Based Metal–Insulator–Semiconductor Structures with RuO2–(IrO2) Films for Photoelectrochemical Water Oxidation

Characterization of MIS photoanode with a thin SiO2 layer for photoelectrochemical water splitting

Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes

Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation

ZrO sub(2)/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Invited: Liquid-injection MOCVD-grown Ga2O3 on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties

Thermal Stability of Ru Gate Electrode on HfSiO Dielectric

Atomic layer deposition of high-permittivity TiO 2 dielectrics with low leakage current on RuO 2 in TiCl 4 -based processes

Structure and Thermal Stability of ε/κ-Ga 2 O 3 Films Deposited by Liquid-Injection MOCVD

Structure and Thermal Stability of ε/κ-Ga[sub.2]O[sub.3] Films Deposited by Liquid-Injection MOCVD

Development and characterisation of photoelectrochemical MIS structures with RuO 2 /TiO 2 gate stacs for water oxidation

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