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Observation of single-defect memristor in an MoS2 atomic sheet

Nature nanotechnology, 2021-01, Vol.16 (1), p.58-62

2021

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A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon

Advanced materials (Weinheim), 2021-02, Vol.33 (7), p.e2007792-n/a

2021

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Differentiation of Surface and Bulk Conductivities in Topological Insulators via Four-Probe Spectroscopy

Nano letters, 2016-04, Vol.16 (4), p.2213-2220

2016

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Detection of the Spin-Chemical Potential in Topological Insulators Using Spin-Polarized Four-Probe STM

Physical review letters, 2017-09, Vol.119 (13), p.137202-137202, Article 137202

2017

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Contactless Determination of Electrical Conductivity of One-Dimensional Nanomaterials by Solution-Based Electro-orientation Spectroscopy

ACS nano, 2015-05, Vol.9 (5), p.5405-5412

2015

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Wavefront distortion correction in scanning tunneling microscope image

Review of scientific instruments, 2024-05, Vol.95 (5)

2024

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A metastable pentagonal 2D material synthesized by symmetry-driven epitaxy

Nature materials, 2024-10, Vol.23 (10), p.1339-1346

2024

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Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation

Advanced materials (Weinheim), 2016-10, Vol.28 (37), p.8240-8247

2016

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Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

ACS nano, 2022-05, Vol.16 (5), p.7428-7437

2022

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Visualization and manipulation of magnetic domains in the quasi-two-dimensional material Fe3GeTe2

Physical review. B, 2018-01, Vol.97 (1)

2018

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High-throughput electrical measurement and microfluidic sorting of semiconductor nanowires

Lab on a chip, 2016-01, Vol.16 (11), p.2126-2134

2016

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Formation of uni-directional ultrathin metallic YSi2 nanowires on Si(110)

Applied physics letters, 2013-08, Vol.103 (7)

2013

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Autonomous convergence of STM control parameters using Bayesian optimization

APL machine learning, 2024-03, Vol.2 (1), p.016121-016121-10

2024

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Differentiation of Surface and Bulk Conductivities via Four-probe Spectroscopy

Microscopy and microanalysis, 2016-07, Vol.22 (S3), p.384-385

2016

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Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

Frontiers in materials, 2022-05, Vol.9

2022

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Isoelectronic Tungsten Doping in Monolayer MoSe 2 for Carrier Type Modulation

Advanced materials (Weinheim), 2016-10, Vol.28 (37), p.8240-8247

2016

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Tip-induced local strain on MoS2/graphite detected by inelastic electron tunneling spectroscopy

Physical review. B, 2018-03, Vol.97 (12)

2018

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Spatially-resolved studies on the role of defects and boundaries in electronic behavior of 2D materials

Progress in surface science, 2017-08, Vol.92 (3), p.176-201

2017

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Ghost states and surface structures of the charge density wave kagome metal ScV 6 Sn 6

Applied surface science, 2024-08, Vol.665, p.160190, Article 160190

2024

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Ghost states and surface structures of the charge density wave kagome metal ScV6Sn6

Applied surface science, 2024-08, Vol.665, Article 160190

2024

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A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon

Advanced materials (Weinheim), 2020-12, Vol.NA (NA)

2020

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Quantum oscillations in the surface excitations of ultrathin Mg(0001) films

Physical review. B, Condensed matter and materials physics, 2014-09, Vol.90 (11), Article 115416

2014

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Differentiation of surface and bulk conductivities in topological insulator via four-probe spectroscopy

Nano letters, 2016-03, Vol.16 (4)

2016

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High-throughput electrical measurement and microfluidic sorting of semiconductor nanowiresElectronic supplementary information (ESI) available: Direct-contact STM measurement of the I-V curves with different probe spacings, aspect-ratio measurements of as-produced and passivated Si nanowires by SEM, alignment of two individual Si nanowires at different frequencies under slow-rates and demonstration of sorting according to their electrical conductivities. See DOI: 10.1039/c6lc00217j

2016-05

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Isoelectronic Tungsten Doping in Monolayer MoSe sub(2) for Carrier Type Modulation

Advanced materials (Weinheim), 2016-10, Vol.28 (37), p.8240-8247

2016

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Observation of single-defect memristor in an MoS2 atomic sheet

A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon

Differentiation of Surface and Bulk Conductivities in Topological Insulators via Four-Probe Spectroscopy

Detection of the Spin-Chemical Potential in Topological Insulators Using Spin-Polarized Four-Probe STM

Contactless Determination of Electrical Conductivity of One-Dimensional Nanomaterials by Solution-Based Electro-orientation Spectroscopy

Wavefront distortion correction in scanning tunneling microscope image

A metastable pentagonal 2D material synthesized by symmetry-driven epitaxy

Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation

Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

Visualization and manipulation of magnetic domains in the quasi-two-dimensional material Fe3GeTe2

High-throughput electrical measurement and microfluidic sorting of semiconductor nanowires

Formation of uni-directional ultrathin metallic YSi2 nanowires on Si(110)

Autonomous convergence of STM control parameters using Bayesian optimization

Differentiation of Surface and Bulk Conductivities via Four-probe Spectroscopy

Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

Isoelectronic Tungsten Doping in Monolayer MoSe 2 for Carrier Type Modulation

Tip-induced local strain on MoS2/graphite detected by inelastic electron tunneling spectroscopy

Spatially-resolved studies on the role of defects and boundaries in electronic behavior of 2D materials

Ghost states and surface structures of the charge density wave kagome metal ScV 6 Sn 6

Ghost states and surface structures of the charge density wave kagome metal ScV6Sn6

A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon

Quantum oscillations in the surface excitations of ultrathin Mg(0001) films

Differentiation of surface and bulk conductivities in topological insulator via four-probe spectroscopy

Isoelectronic Tungsten Doping in Monolayer MoSe sub(2) for Carrier Type Modulation

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