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Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy

Journal of non-crystalline solids, 2002-05, Vol.303 (1), p.134-138

2002

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Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1257-1260

2013

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Analysis of the minority carrier response of n -type and p -type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

Applied physics letters, 2011-11, Vol.99 (21)

2011

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Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces

Microelectronic engineering, 2009-07, Vol.86 (7), p.1711-1714

2009

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Application of the quadrat counts method to the analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structures

Microelectronic engineering, 2011-04, Vol.88 (4), p.448-451

2011

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Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures

Journal of applied physics, 2017-12, Vol.122 (21)

2017

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Exploratory analysis of the breakdown spots spatial distribution in metal gate/high- K/III–V stacks using functional summary statistics

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1294-1297

2010

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Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high- k /InGaAs metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2015-11, Vol.118 (20)

2015

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Multi-technique characterisation of MOVPE-grown GaAs on Si

Microelectronic engineering, 2011-04, Vol.88 (4), p.472-475

2011

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The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/tin gate MOSFETs

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.1874-1877

2007

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Degradation dynamics and breakdown of MgO gate oxides

Microelectronic engineering, 2009-07, Vol.86 (7), p.1715-1717

2009

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Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD

Thin solid films, 2003-03, Vol.428 (1-2), p.263-268

2003

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Characterization of the Failure Site Distribution in MIM Devices Using Zoomed Wavelet Analysis

Journal of electronic materials, 2018-09, Vol.47 (9), p.5033-5038

2018

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Fermi level de-pinning of aluminium contacts to n -type germanium using thin atomic layer deposited layers

Applied physics letters, 2014-01, Vol.104 (1), p.12102

2014

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Interface of ultrathin HfO2 films deposited by UV-photo-CVD

Thin solid films, 2004-04, Vol.453-454 (Complete), p.203-207

2004

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Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks

Microelectronic engineering, 2005-06, Vol.80, p.70-73

2005

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Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

Microelectronic engineering, 2009-07, Vol.86 (7), p.1642-1645

2009

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Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Journal of applied physics, 2016-12, Vol.120 (23)

2016

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Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices

Microelectronic engineering, 2019-07, Vol.215, p.111023, Article 111023

2019

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Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics

Journal of applied physics, 2013-10, Vol.114 (15)

2013

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Chemical and electrical characterization of the HfO2/InAlAs interface

Journal of applied physics, 2013-09, Vol.114 (10)

2013

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Gentle FUSI NiSi metal gate process for high- k dielectric screening

Microelectronic engineering, 2008-10, Vol.85 (10), p.2019-2021

2008

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Electrically active interface defects in the In0.53Ga0.47As MOS system

Microelectronic engineering, 2013-09, Vol.109, p.182-188

2013

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