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Recent Progress and Future Prospects of 2D‐Based Photodetectors

Advanced materials (Weinheim), 2018-12, Vol.30 (51), p.e1801164-n/a

2018

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Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction

Nature communications, 2017-09, Vol.8 (1), p.1-6, Article 572

2017

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MoS2–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

Advanced materials (Weinheim), 2017-05, Vol.29 (17), p.n/a

2017

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Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors

Advanced functional materials, 2014-11, Vol.24 (44), p.7025-7031

2014

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Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p-n heterojunctions

Nano research, 2016-02, Vol.9 (2), p.507-516

2016

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Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p‑n Heterostructure

The journal of physical chemistry letters, 2015-07, Vol.6 (13), p.2483-2488

2015

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Polarized vdW Schottky photodiode with high fill-factor and polarization ratio

Applied physics letters, 2023-07, Vol.123 (3)

2023

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Room-temperature direct synthesis of semi-conductive PbS nanocrystal inks for optoelectronic applications

Nature communications, 2019-11, Vol.10 (1), p.5136-8, Article 5136

2019

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WS2 lateral p–n homojunction toward a sensitive self-driven photodetector by water treatment

Applied physics letters, 2024-02, Vol.124 (9)

2024

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High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression

Nanoscale, 2018-08, Vol.10 (31), p.15071-15077

2018

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Optoelectronics based on 2D TMDs and heterostructures

Journal of semiconductors, 2017-03, Vol.38 (3), p.2-10

2017

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Edge-states ferromagnetism of WS2 nanosheets

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2 Heterojunctions

Small (Weinheim an der Bergstrasse, Germany), 2015-10, Vol.11 (40), p.5430-5438

2015

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Anti-ambipolar behavior and photovoltaic effect in p-MoTe2/n-InSe heterojunctions

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-08, Vol.9 (32), p.10372-10380

2021

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Anisotropic Shubnikov-de Haas effect in topological Weyl semimetal MoTe2

Applied physics letters, 2021-12, Vol.119 (24)

2021

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Adaptative machine vision with microsecond-level accurate perception beyond human retina

Nature communications, 2024-07, Vol.15 (1), p.6261-11, Article 6261

2024

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Thickness-dependent Raman spectra, transport properties and infrared photoresponse of few-layer black phosphorus

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (42), p.1974-198

2015

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Novel two-dimensional monoelemental and ternary materials: growth, physics and application

Nanophotonics (Berlin, Germany), 2020-08, Vol.9 (8), p.2147-2168

2020

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Reconfigurable WSe2 Schottky heterojunctions for logic rectifiers and ultrafast photodetectors

Science China materials, 2023-12, Vol.66 (12), p.4711-4722

2023

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Two-dimensional transition metal dichalcogenides for lead halide perovskites-based photodetectors: band alignment investigation for the case of CsPbBr3/MoSe2

Journal of semiconductors, 2020-05, Vol.41 (5), p.105-110

2020

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Raman Anisotropy and Polarization-Sensitive Photodetection in 2D Bi2O2Se–WSe2 Heterostructure

ACS omega, 2021-12, Vol.6 (50), p.34763-34770

2021

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Abnormal Photocurrent Response and Enhanced Photocatalytic Activity Induced by Charge Transfer between WS2 Nanosheets and WO3 Nanoparticles

Chemphyschem, 2013-12, Vol.14 (18), p.4069-4073

2013

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High hole mobility in physical vapour deposition-grown tellurium-based transistors

Royal Society open science, 2021-08, Vol.8 (8), p.210554-210554

2021

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Vertical 1T’‐WTe2/WS2 Schottky‐Barrier Phototransistor with Polarity‐Switching Behavior

Advanced electronic materials, 2024-01, Vol.10 (1), p.n/a

2024

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Near-Unity Photoluminescence Quantum Yield in CsPbBr3 Nanocrystal Solid-State Films via Postsynthesis Treatment with Lead Bromide

Chemistry of materials, 2017-09, Vol.29 (18), p.7663-7667

2017

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Recent Progress and Future Prospects of 2D‐Based Photodetectors

Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction

MoS2–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors

Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p-n heterojunctions

Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p‑n Heterostructure

Polarized vdW Schottky photodiode with high fill-factor and polarization ratio

Room-temperature direct synthesis of semi-conductive PbS nanocrystal inks for optoelectronic applications

WS2 lateral p–n homojunction toward a sensitive self-driven photodetector by water treatment

High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression

Optoelectronics based on 2D TMDs and heterostructures

Edge-states ferromagnetism of WS2 nanosheets

Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2 Heterojunctions

Anti-ambipolar behavior and photovoltaic effect in p-MoTe2/n-InSe heterojunctions

Anisotropic Shubnikov-de Haas effect in topological Weyl semimetal MoTe2

Adaptative machine vision with microsecond-level accurate perception beyond human retina

Thickness-dependent Raman spectra, transport properties and infrared photoresponse of few-layer black phosphorus

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

Reconfigurable WSe2 Schottky heterojunctions for logic rectifiers and ultrafast photodetectors

Two-dimensional transition metal dichalcogenides for lead halide perovskites-based photodetectors: band alignment investigation for the case of CsPbBr3/MoSe2

Raman Anisotropy and Polarization-Sensitive Photodetection in 2D Bi2O2Se–WSe2 Heterostructure

Abnormal Photocurrent Response and Enhanced Photocatalytic Activity Induced by Charge Transfer between WS2 Nanosheets and WO3 Nanoparticles

High hole mobility in physical vapour deposition-grown tellurium-based transistors

Vertical 1T’‐WTe2/WS2 Schottky‐Barrier Phototransistor with Polarity‐Switching Behavior

Near-Unity Photoluminescence Quantum Yield in CsPbBr3 Nanocrystal Solid-State Films via Postsynthesis Treatment with Lead Bromide

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