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A switchable single-band/multiband CMOS low nose amplifier

2009 Asia Pacific Microwave Conference, 2009, p.1128-1131

2009

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A concurrent dual-band folded-cascode mixer using a LC-tank biasing circuit

Microelectronics, 2012-12, Vol.43 (12), p.1010-1015

2012

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A Dual-Band Current-Reused LNA with the Switching of LC-Resonances

2009 Fourth International Conference on Innovative Computing, Information and Control (ICICIC), 2009, p.581-584

2009

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A low power mixer with LC phase shifters for a single-end input

2010 Asia-Pacific Microwave Conference, 2010, p.574-577

2010

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A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch

IEEE journal of solid-state circuits, 2024-08, Vol.59 (8), p.2581-2590

2024

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Understanding players’ achievement values from MMORPGs: an exploratory study

Internet research, 2015-10, Vol.25 (5), p.829-851

2015

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Emergency Medical Services in Taiwan: Past, Present, and Future

Journal of Acute Medicine, 2023-09, Vol.13 (3), p.91-103

2023

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A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Epitaxial growth of heavily boron-doped Si by Al(B)-induced crystallisation at low temperature for back surface field manufacturing

CrystEngComm, 2013-01, Vol.15 (9), p.1680-1684

2013

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Spiroconjugation-enhanced intermolecular charge transport

Applied physics letters, 2005-08, Vol.87 (5), p.052103-052103-3

2005

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Highly conductive riboflavin-based carbon quantum dot–embedded SiO2@MoS2 nanocomposite for enhancing bioelectricity generation through synergistic direct and indirect electron transport

Nano energy, 2024-03, Vol.121, p.109251, Article 109251

2024

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Influence of Chopstick Size on Taste Evaluations

Psychological reports, 2015-04, Vol.116 (2), p.381-387

2015

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Analysis of Influential Factors in Secondary PM2.5 by K-Medoids and Correlation Coefficient

2017 IEEE 7th International Symposium on Cloud and Service Computing (SC2), 2017, p.177-182

2017

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How Confidence and Uncertainty Affect Consumers' Enjoyment of Gambling

Social behavior and personality, 2012-04, Vol.40 (3), p.425-432

2012

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Field Plate and Package Optimization for GaN Devices and Systems

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2024, p.1-2

2024

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Epitaxial growth of heavily boron-doped Si by Al(B)-induced crystallisation at low temperature for back surface field manufacturingElectronic Supplementary Information (ESI) available. See DOI: 10.1039/c2ce26563j

2013-02

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A switchable single-band/multiband CMOS low nose amplifier

A concurrent dual-band folded-cascode mixer using a LC-tank biasing circuit

A Dual-Band Current-Reused LNA with the Switching of LC-Resonances

A low power mixer with LC phase shifters for a single-end input

A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch

Understanding players’ achievement values from MMORPGs: an exploratory study

Emergency Medical Services in Taiwan: Past, Present, and Future

A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices

Epitaxial growth of heavily boron-doped Si by Al(B)-induced crystallisation at low temperature for back surface field manufacturing

Spiroconjugation-enhanced intermolecular charge transport

Highly conductive riboflavin-based carbon quantum dot–embedded SiO2@MoS2 nanocomposite for enhancing bioelectricity generation through synergistic direct and indirect electron transport

Influence of Chopstick Size on Taste Evaluations

Analysis of Influential Factors in Secondary PM2.5 by K-Medoids and Correlation Coefficient

How Confidence and Uncertainty Affect Consumers' Enjoyment of Gambling

Field Plate and Package Optimization for GaN Devices and Systems

Epitaxial growth of heavily boron-doped Si by Al(B)-induced crystallisation at low temperature for back surface field manufacturingElectronic Supplementary Information (ESI) available. See DOI: 10.1039/c2ce26563j

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