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Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD

Journal of crystal growth, 2015-10, Vol.427, p.72-79

2015

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Spatial Distributions of Trapping Centers in \hbox/\hbox Gate Stack

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1338-1345

2007

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Determination of Free Electron Density in Sequentially Doped In x Ga 1-x As by Raman Spectroscopy

Applied spectroscopy, 2015-02, Vol.69 (2), p.239-242

2015

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Raman scattering study of LO phonon–plasmon coupled modes in p-type InGaAs

Journal of alloys and compounds, 2015-06, Vol.634, p.87-93

2015

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Determination of Free Electron Density in Sequentially Doped InxGa1-xAs by Raman Spectroscopy

Applied spectroscopy, 2015-02, Vol.69 (2), p.239-242

2015

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Spatial distributions of trapping centers in HfO2/SiO2 gate stack

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1338-1345

2007

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High mobility CMOS transistors on Si/SiGe heterostructure channels

Microelectronic engineering, 2012-09, Vol.97, p.26-28

2012

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The ν1 + ν5 Band of HCCN: Determination of the ν5 Vibrational Energy

Journal of molecular spectroscopy, 1999-12, Vol.198 (2), p.421-428

1999

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An Efficient Technique to Quantify Dislocation Densities Imaged Through Annular Dark Field Scanning Transmission Electron Microscopy

Microscopy and microanalysis, 2012-07, Vol.18 (S2), p.1038-1039

2012

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Application of Inline X-ray Metrology for Defect Characterization of III-V/Si Heterostructures

ECS transactions, 2013, Vol.50 (6), p.341-350

2013

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Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-11, Vol.23 (6), p.1706-1713

2005

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Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

2009 Symposium on VLSI Technology, 2009, p.34-35

2009

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SIMS depth profiling of advanced gate dielectric materials

Applied surface science, 2003-01, Vol.203, p.409-413

2003

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Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

2009 Symposium on VLSI Technology, 2009, p.100-101

2009

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A novelty universal adaptive seating system for dragon boating

Prosthetics and orthotics international, 2012-09, Vol.36 (3), p.361-365

2012

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Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

2008 Symposium on VLSI Technology, 2008, p.82-83

2008

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Characterization of Atomic Layer Deposition using X-Ray Reflectometry

AIP conference proceedings, 2005, Vol.788 (1)

2005

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Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Kinetics of the Reaction of Propargyl Radical with Nitric Oxide

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2000-04, Vol.104 (15), p.3356-3363

2000

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Vth variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node

2009 Symposium on VLSI Technology, 2009, p.74-75

2009

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N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, 2004, p.15-16 vol.1

2004

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Device and reliability improvement of HfSiON+LaOx/metal gate stacks for 22nm node application

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

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Higher Permittivity Rare Earth-Doped HfO2 and ZrO2 Dielectrics for Logic and Memory Applications

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2007, p.1-2

2007

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Gastrointestinal Manifestations of SARS-CoV-2 Infection and Virus Load in Fecal Samples From a Hong Kong Cohort: Systematic Review and Meta-analysis

Gastroenterology (New York, N.Y. 1943), 2020-07, Vol.159 (1), p.81-95

2020

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Broad-spectrum antivirals for the emerging Middle East respiratory syndrome coronavirus

The Journal of infection, 2013-12, Vol.67 (6), p.606-616

2013

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Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD

Spatial Distributions of Trapping Centers in \hbox/\hbox Gate Stack

Determination of Free Electron Density in Sequentially Doped In x Ga 1-x As by Raman Spectroscopy

Raman scattering study of LO phonon–plasmon coupled modes in p-type InGaAs

Determination of Free Electron Density in Sequentially Doped InxGa1-xAs by Raman Spectroscopy

Spatial distributions of trapping centers in HfO2/SiO2 gate stack

High mobility CMOS transistors on Si/SiGe heterostructure channels

The ν1 + ν5 Band of HCCN: Determination of the ν5 Vibrational Energy

An Efficient Technique to Quantify Dislocation Densities Imaged Through Annular Dark Field Scanning Transmission Electron Microscopy

Application of Inline X-ray Metrology for Defect Characterization of III-V/Si Heterostructures

Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition

Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

SIMS depth profiling of advanced gate dielectric materials

Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

A novelty universal adaptive seating system for dragon boating

Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

Characterization of Atomic Layer Deposition using X-Ray Reflectometry

Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM

Kinetics of the Reaction of Propargyl Radical with Nitric Oxide

Vth variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node

N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]

Device and reliability improvement of HfSiON+LaOx/metal gate stacks for 22nm node application

Higher Permittivity Rare Earth-Doped HfO2 and ZrO2 Dielectrics for Logic and Memory Applications

Gastrointestinal Manifestations of SARS-CoV-2 Infection and Virus Load in Fecal Samples From a Hong Kong Cohort: Systematic Review and Meta-analysis

Broad-spectrum antivirals for the emerging Middle East respiratory syndrome coronavirus

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