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Anomalous Gate-Edge Leakage Induced by High Tensile Stress in NMOSFET

IEEE electron device letters, 2008-11, Vol.29 (11), p.1249-1251

2008

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IEEE_Xplore

An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling

IEEE electron device letters, 2001-06, Vol.22 (6), p.287-289

2001

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IEEE_Xplore

Nanoscale doping fluctuation resolved by electrostatic force microscopy via the effect of surface band bending

Applied physics letters, 2008-12, Vol.93 (25), p.253102-253102-3

2008

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Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers

Nanotechnology, 2008-08, Vol.19 (32), p.325703-325703 (7)

2008

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Spatial and energetic distribution of border traps in the dual-layer HfO2∕SiO2 high-k gate stack by low-frequency capacitance-voltage measurement

Applied physics letters, 2006-10, Vol.89 (16)

2006

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25 nm CMOS Omega FETs

Digest. International Electron Devices Meeting, 2002, p.255-258

2002

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IEEE_Xplore

A spectroscopic analysis of phase separation behavior of polyurethane in restricted geometry: chain rigidity effects

Macromolecules, 1994-11, Vol.27 (24), p.7146-7151

1994

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Application of a Molecular Simulation Technique for Prediction of Phase-Separated Structures of Semirigid Model Polyurethanes

Macromolecules, 1994-03, Vol.27 (7), p.1720-1728

1994

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Investigation of the Phase Separation Behavior of Polyurethane Elastomers by Two-Dimensional Wide-Line-Separation Nuclear Magnetic Resonance Spectroscopy

Macromolecules, 1995-05, Vol.28 (11), p.4036-4038

1995

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Spectroscopic Analysis of Chain Conformation Distribution in a Biodegradable Polyester Elastomer, Poly(.beta.-hydroxyoctanoate)

Macromolecules, 1995-11, Vol.28 (6), p.2016-2022

1995

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Reliability of HfSiON as gate dielectric for advanced CMOS technology

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.170-171

2005

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IEEE_Xplore

HfSiON Gate Dielectric for 45nm Node Low-Power Device

2006 International Symposium on VLSI Technology, Systems, and Applications, 2006, p.1-2

2006

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IEEE_Xplore

A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology

2010 International Electron Devices Meeting, 2010, p.34.1.1-34.1.4

2010

Link zum Volltext
IEEE_Xplore

Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1330-1337

2007

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Spatial and energetic distribution of border trapsin the dual-layer Hf O 2 ∕ Si O 2 high- k gate stack by low-frequencycapacitance-voltage measurement

Applied physics letters, 2006-10, Vol.89 (16), p.162911-162911-3

2006

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Low power device technology with SiGe channel, HfSiON, and poly-Si gate

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.161-164

2004

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IEEE_Xplore

Effects of Base Oxide Thickness and Silicon Composition on Charge Trapping in HfSiO/SiO 2 High-k Gate Stacks

Japanese Journal of Applied Physics, 2005-08, Vol.44 (8R), p.5977

2005

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Investigation of the phase separation behavior of polyurethane elastomers by two-dimensional wide-line-separation nuclear magntic resonance spectroscopy

Macromolecules, 1995, Vol.28 (11), p.4036-4038

1995

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Verfügbarkeit prüfen

A spectroscopic analysis of phase separation behavior of polyurethane in restricted geometry : chain ridigity effects

Macromolecules, 1994, Vol.27 (24), p.7146-7151

1994

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Microstructure and deformation mechanism of thermoplastic elastomers

Tao, Hun-Jan

1994

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ProQuest

A 25-nm gate-length FinFET transistor module for 32nm node

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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IEEE_Xplore

35nm CMOS FinFETs

2002

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35 nm CMOS FinFETs

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.104-105

2002

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IEEE_Xplore

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Anomalous Gate-Edge Leakage Induced by High Tensile Stress in NMOSFET

An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling

Nanoscale doping fluctuation resolved by electrostatic force microscopy via the effect of surface band bending

Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers

Spatial and energetic distribution of border traps in the dual-layer HfO2∕SiO2 high-k gate stack by low-frequency capacitance-voltage measurement

25 nm CMOS Omega FETs

A spectroscopic analysis of phase separation behavior of polyurethane in restricted geometry: chain rigidity effects

Application of a Molecular Simulation Technique for Prediction of Phase-Separated Structures of Semirigid Model Polyurethanes

Investigation of the Phase Separation Behavior of Polyurethane Elastomers by Two-Dimensional Wide-Line-Separation Nuclear Magnetic Resonance Spectroscopy

Spectroscopic Analysis of Chain Conformation Distribution in a Biodegradable Polyester Elastomer, Poly(.beta.-hydroxyoctanoate)

Reliability of HfSiON as gate dielectric for advanced CMOS technology

HfSiON Gate Dielectric for 45nm Node Low-Power Device

A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology

Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method

Spatial and energetic distribution of border trapsin the dual-layer Hf O 2 ∕ Si O 2 high- k gate stack by low-frequencycapacitance-voltage measurement

Low power device technology with SiGe channel, HfSiON, and poly-Si gate

Effects of Base Oxide Thickness and Silicon Composition on Charge Trapping in HfSiO/SiO 2 High-k Gate Stacks

Investigation of the phase separation behavior of polyurethane elastomers by two-dimensional wide-line-separation nuclear magntic resonance spectroscopy

A spectroscopic analysis of phase separation behavior of polyurethane in restricted geometry : chain ridigity effects

Microstructure and deformation mechanism of thermoplastic elastomers

A 25-nm gate-length FinFET transistor module for 32nm node

35nm CMOS FinFETs

35 nm CMOS FinFETs

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