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High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

IEEE transactions on power electronics, 2016-07, Vol.31 (7), p.4742-4754

2016

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Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

Materials science forum, 2009-01, Vol.600-603, p.931-934

2009

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Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Materials science forum, 2009-03, Vol.615-617, p.749-752

2009

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Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

Materials science forum, 2007-09, Vol.556-557, p.77-80

2007

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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1864-1870

2008

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Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Materials science forum, 2015-06, Vol.821-823, p.387-390

2015

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Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Materials science forum, 2010-04, Vol.645-648, p.969-974

2010

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High power 4H–SiC pin diodes (10kV class) with record high carrier lifetime

Solid-state electronics, 2006-07, Vol.50 (7-8), p.1368-1370

2006

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Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields

Materials Science Forum, 2005-05, Vol.483-485, p.965-968

2005

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Critical Technical Issues in High Voltage SiC Power Devices

Materials science forum, 2009-01, Vol.600-603, p.895-900

2009

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Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

Materials science forum, 2006-10, Vol.527-529, p.1329-1334

2006

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Self-Heating of 4H-SiC PiN Diodes at High Current Densities

Materials science forum, 2009, Vol.600-603, p.1007-1010

2009

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A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs

Materials science forum, 2007-01, Vol.556-557, p.775-778

2007

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Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications

Materials science forum, 2007-01, Vol.556-557, p.895-900

2007

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High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes

Solid-state electronics, 2005-07, Vol.49 (7), p.1228-1232

2005

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Low Frequency Noise in 4H-SiC MOSFETs

Materials science forum, 2009-01, Vol.615-617, p.817-820

2009

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Drift-free 10-kV, 20-A 4H-SiC PiN diodes

Journal of electronic materials, 2005-04, Vol.34 (4), p.341-344

2005

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Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

Materials science forum, 2007-01, Vol.556-557, p.921-924

2007

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High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

Materials science forum, 2006-10, Vol.527-529, p.1355-1358

2006

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High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

Materials science forum, 2006-10, Vol.527-529, p.1339-1342

2006

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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

Materials science forum, 2006-10, Vol.527-529, p.141-146

2006

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Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging

Materials science forum, 2012-05, Vol.717-720, p.403-406

2012

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Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse

Solid-state electronics, 2008-11, Vol.52 (11), p.1802-1805

2008

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1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Materials science forum, 2011, Vol.679-680, p.633-636

2011

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High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

High power 4H–SiC pin diodes (10kV class) with record high carrier lifetime

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields

Critical Technical Issues in High Voltage SiC Power Devices

Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

Self-Heating of 4H-SiC PiN Diodes at High Current Densities

A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs

Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications

High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes

Low Frequency Noise in 4H-SiC MOSFETs

Drift-free 10-kV, 20-A 4H-SiC PiN diodes

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging

Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

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