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Understanding short channel mobility degradation by accurate external resistance decomposition and intrinsic mobility extraction

Journal of applied physics, 2015-02, Vol.117 (6)

2015

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Hafnium oxide gate dielectrics on sulfur-passivated germanium

Applied physics letters, 2006-09, Vol.89 (11), p.112905-112905-3

2006

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Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1441-1447

2004

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Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

IEEE electron device letters, 2004-03, Vol.25 (3), p.135-137

2004

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Investigation of Fixed Oxide Charge and Fin Profile Effects on Bulk FinFET Device Characteristics

IEEE electron device letters, 2013-12, Vol.34 (12), p.1485-1487

2013

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IEEE_Xplore

A low voltage SANOS nonvolatile semiconductor memory (NVSM) device

Solid-state electronics, 2006-09, Vol.50 (9-10), p.1667-1669

2006

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Comparison of laparoscopic and open radical hysterectomy in cervical cancer patients with tumor size ≤2 cm

International journal of gynecological cancer, 2020-05, Vol.30 (5), p.564-571

2020

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High performance bulk planar 20nm CMOS technology for low power mobile applications

2012 Symposium on VLSI Technology (VLSIT), 2012, p.129-130

2012

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IEEE_Xplore

Blanket SMT With In Situ N2 Plasma Treatment on the (100) Wafer for the Low-Cost Low-Power Technology Application

IEEE electron device letters, 2009-09, Vol.30 (9), p.916-918

2009

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Twelve-year experience with laparoscopic radical hysterectomy and pelvic lymphadenectomy in cervical cancer

Gynecologic oncology, 2011-03, Vol.120 (3), p.362-367

2011

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Foreword Special Issue on Variation Aware Technology and Circuit Co-Design

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1680-1681

2015

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IEEE_Xplore

Malignant melanoma of the vagina: A case report and review of the literature

Oncology letters, 2014-10, Vol.8 (4), p.1585-1588

2014

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Outcome and Prognostic Factors of Laparoscopic Radical Hysterectomy and Pelvic Lymphadenectomy in 148 Patients With Stage IB1 Cervical Cancer

International journal of gynecological cancer, 2012-02, Vol.22 (2), p.286-290

2012

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Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology

2007 IEEE International Integrated Reliability Workshop Final Report, 2007, p.70-73

2007

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IEEE_Xplore

Mobility and CMOS devices/circuits on sub-10nm [110] ultra thin body SOI

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.78-79

2005

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IEEE_Xplore

On the scalability and carrier transport of advanced CMOS devices

2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005, 2005, p.175-178

2005

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IEEE_Xplore

High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

Digest. International Electron Devices Meeting, 2002, p.441-444

2002

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IEEE_Xplore

E. coli and bacteriophage MS2 disinfection by UV, ozone and the combined UV and ozone processes

Frontiers of environmental science & engineering, 2014-08, Vol.8 (4), p.547-552

2014

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Blanket SMT With In Situ N2 Plasma Treatment on the \langle \hbox \rangle Wafer for the Low-Cost Low-Power Technology Application

IEEE electron device letters, 2009-09, Vol.30 (9), p.916-918

2009

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IEEE_Xplore

Blanket SMT With In Situ N2 Plasma Treatment on the langle hbox 100 rangle Wafer for the Low-Cost Low-Power Technology Application

IEEE electron device letters, 2009-01, Vol.30 (9)

2009

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Special Issue on Nonclassical Si CMOS Devices and Technologies: Extending the Roadmap

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.941-943

2006

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IEEE_Xplore

Electron holography for 2-D dopant profiling

2009 International Workshop on Junction Technology, 2009, p.69-73

2009

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IEEE_Xplore

A novel, low-cost deep trench decoupling capacitor for high-performance, low-power bulk CMOS applications

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.1146-1149

2008

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IEEE_Xplore

Ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on surface-nitrided Ge

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1441-1447

2004

Link zum Volltext
IEEE_Xplore

Temperature-Dependent Admittance Analysis of HfO2 Gate Dielectrics on Nitrogen- and Sulfur-Passivated Ge

2006 International SiGe Technology and Device Meeting, 2006, p.1-2

2006

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IEEE_Xplore

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Understanding short channel mobility degradation by accurate external resistance decomposition and intrinsic mobility extraction

Hafnium oxide gate dielectrics on sulfur-passivated germanium

Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge

Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

Investigation of Fixed Oxide Charge and Fin Profile Effects on Bulk FinFET Device Characteristics

A low voltage SANOS nonvolatile semiconductor memory (NVSM) device

Comparison of laparoscopic and open radical hysterectomy in cervical cancer patients with tumor size ≤2 cm

High performance bulk planar 20nm CMOS technology for low power mobile applications

Blanket SMT With In Situ N2 Plasma Treatment on the (100) Wafer for the Low-Cost Low-Power Technology Application

Twelve-year experience with laparoscopic radical hysterectomy and pelvic lymphadenectomy in cervical cancer

Foreword Special Issue on Variation Aware Technology and Circuit Co-Design

Malignant melanoma of the vagina: A case report and review of the literature

Outcome and Prognostic Factors of Laparoscopic Radical Hysterectomy and Pelvic Lymphadenectomy in 148 Patients With Stage IB1 Cervical Cancer

Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology

Mobility and CMOS devices/circuits on sub-10nm [110] ultra thin body SOI

On the scalability and carrier transport of advanced CMOS devices

High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

E. coli and bacteriophage MS2 disinfection by UV, ozone and the combined UV and ozone processes

Blanket SMT With In Situ N2 Plasma Treatment on the \langle \hbox \rangle Wafer for the Low-Cost Low-Power Technology Application

Blanket SMT With In Situ N2 Plasma Treatment on the langle hbox 100 rangle Wafer for the Low-Cost Low-Power Technology Application

Special Issue on Nonclassical Si CMOS Devices and Technologies: Extending the Roadmap

Electron holography for 2-D dopant profiling

A novel, low-cost deep trench decoupling capacitor for high-performance, low-power bulk CMOS applications

Ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on surface-nitrided Ge

Temperature-Dependent Admittance Analysis of HfO2 Gate Dielectrics on Nitrogen- and Sulfur-Passivated Ge

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