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Generation of terahertz radiation in ordered arrays of GaAs nanowires

Applied physics letters, 2015-06, Vol.106 (25)

2015

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Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys

Journal of physics. D, Applied physics, 2014-02, Vol.47 (7), p.75106-6

2014

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Composition determination of quaternary GaAsPN layers from single X-ray diffraction measurement of quasi-forbidden (002) reflection

Journal of applied physics, 2014-05, Vol.115 (20)

2014

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High- k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Applied physics letters, 2012-02, Vol.100 (7), p.071606-071606-4

2012

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Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces

Applied surface science, 2014-09, Vol.314, p.570-574

2014

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Properties of atomic-layer-deposited ultra-thin AIN films on GaAs surfaces

Applied surface science, 2014-09, Vol.314, p.570-574

2014

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Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography

Thin solid films, 2013-05, Vol.534, p.680-684

2013

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Resonant features of the terahertz generation in semiconductor nanowires

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1561-1565

2016

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Optical properties of electron beam and -ray irradiated InGaAs/GaAs quantum well and quantum dot structures

Radiation physics and chemistry (Oxford, England : 1993), 2013-02, Vol.83, p.42-47

2013

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Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Journal of applied physics, 2012-03, Vol.111 (6), p.063511-063511-4

2012

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Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

Journal of applied physics, 2012-02, Vol.111 (4), p.043518-043518-6

2012

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Optical properties of electron beam and γ-ray irradiated InGaAs/GaAs quantum well and quantum dot structures

Radiation physics and chemistry (Oxford, England : 1993), 2013-02, Vol.83, p.42-47

2013

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The effect of resonant Mie absorption under THz radiation emission in semiconductor nanowires

Optics and spectroscopy, 2015-11, Vol.119 (5), p.754-758

2015

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Effects of Zn doping on GaAs nanowires

14th IEEE International Conference on Nanotechnology, 2014, p.825-829

2014

Volltextzugriff (PDF)

Efficient terahertz generation by ordered arrays of GaAs nanowires

2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2016, p.1-2

2016

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Nonlinear microscopy of nano-objects using excitation beam profiles with engineered phase jumps

2016 Conference on Lasers and Electro-Optics (CLEO), 2016, p.1-2

2016

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High Quality GaAs Nanowires Grown on Glass Substrates

Nano letters, 2012-04, Vol.12 (4), p.1912-1918

2012

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Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Properties of AlN grown by plasma enhanced atomic layer deposition

Applied surface science, 2011-06, Vol.257 (17), p.7827-7830

2011

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Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties

Nano research, 2017-08, Vol.10 (8), p.2657-2666

2017

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Second-Harmonic Generation Imaging of Semiconductor Nanowires with Focused Vector Beams

Nano letters, 2015-03, Vol.15 (3), p.1564-1569

2015

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Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition

Journal of physics. D, Applied physics, 2013-12, Vol.46 (50), p.505502-8

2013

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Fabrication of Dual-Type Nanowire Arrays on a Single Substrate

Nano letters, 2015-03, Vol.15 (3), p.1679-1683

2015

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A technique for large-area position-controlled growth of GaAs nanowire arrays

Nanotechnology, 2016-04, Vol.27 (13), p.135601-135601

2016

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Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

Nanotechnology, 2015-10, Vol.26 (41), p.415304-415304

2015

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Generation of terahertz radiation in ordered arrays of GaAs nanowires

Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys

Composition determination of quaternary GaAsPN layers from single X-ray diffraction measurement of quasi-forbidden (002) reflection

High- k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces

Properties of atomic-layer-deposited ultra-thin AIN films on GaAs surfaces

Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography

Resonant features of the terahertz generation in semiconductor nanowires

Optical properties of electron beam and -ray irradiated InGaAs/GaAs quantum well and quantum dot structures

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

Optical properties of electron beam and γ-ray irradiated InGaAs/GaAs quantum well and quantum dot structures

The effect of resonant Mie absorption under THz radiation emission in semiconductor nanowires

Effects of Zn doping on GaAs nanowires

Efficient terahertz generation by ordered arrays of GaAs nanowires

Nonlinear microscopy of nano-objects using excitation beam profiles with engineered phase jumps

High Quality GaAs Nanowires Grown on Glass Substrates

Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers

Properties of AlN grown by plasma enhanced atomic layer deposition

Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties

Second-Harmonic Generation Imaging of Semiconductor Nanowires with Focused Vector Beams

Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition

Fabrication of Dual-Type Nanowire Arrays on a Single Substrate

A technique for large-area position-controlled growth of GaAs nanowire arrays

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

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