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Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature

Nano letters, 2018-04, Vol.18 (4), p.2304-2310

2018

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Separation of interlayer resistance in multilayer MoS2 field-effect transistors

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Triethanolamine doped multilayer MoS2 field effect transistors

Physical chemistry chemical physics : PCCP, 2017, Vol.19 (20), p.13133-13139

2017

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Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

Nano letters, 2015-06, Vol.15 (6), p.3709-3715

2015

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Influence of pitch on the morphology and luminescence properties of self-catalyzed GaAsSb nanowire arrays

Applied physics letters, 2016-12, Vol.109 (24)

2016

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Photoconductance of aligned SnO2 nanowire field effect transistors

Applied physics letters, 2009-07, Vol.95 (4)

2009

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Asymmetric Contacts on a Single SnO2 Nanowire Device: An Investigation Using an Equivalent Circuit Model

ACS applied materials & interfaces, 2011-08, Vol.3 (8), p.3097-3102

2011

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Organic/Inorganic Hybrid p--n Junctions Made of Pentacene--SnO2 Nanowires Network

Jpn J Appl Phys, 2011-10, Vol.50 (10), p.104001-104001-4

2011

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Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Nanoscale, 2014-01, Vol.6 (1), p.433-441

2014

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Highly sensitive hydrogen detection of catalyst-free ZnO nanorod networks suspended by lithography-assisted growth

Nanotechnology, 2011-02, Vol.22 (8), p.085502-085502

2011

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GaAs/AlGaAs Nanowire Array Solar Cell Grown on Si with Ultrahigh Power-per-Weight Ratio

ACS photonics, 2021-08, Vol.8 (8), p.2355-2366

2021

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New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays

Nano letters, 2016-02, Vol.16 (2), p.1201-1209

2016

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Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

Nanotechnology, 2016-09, Vol.27 (38), p.385703-385703

2016

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White‐Light Emitting Diode Array of p + ‐Si/Aligned n‐SnO 2 Nanowires Heterojunctions

Advanced functional materials, 2011-01, Vol.21 (1), p.119-124

2011

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White-Light Emitting Diode Array of p+-Si/Aligned n-SnO2 Nanowires Heterojunctions

Advanced functional materials, 2011-01, Vol.21 (1), p.119-124

2011

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In Situ Heat-Induced Replacement of GaAs Nanowires by Au

Nano letters, 2016-05, Vol.16 (5), p.3051-3057

2016

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Triethanolamine doped multilayer MoS2 field effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c7cp00589j

2017-05

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Triethanolamine doped multilayer MoS 2 field effect transistors

Physical chemistry chemical physics : PCCP, 2017-05, Vol.19 (20), p.13133-13139

2017

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Separation of interlayer resistance in multilayer MoS 2 field-effect transistors

Applied physics letters, 2014-06, Vol.104 (23)

2014

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A sensitive diagnostic assay of rheumatoid arthritis using three-dimensional ZnO nanorod structure

Biosensors & bioelectronics, 2011-10, Vol.28 (1), p.378-385

2011

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Asymmetric Contacts on a Single SnO 2 Nanowire Device: An Investigation Using an Equivalent Circuit Model

ACS applied materials & interfaces, 2011-08, Vol.3 (8), p.3097-3102

2011

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A direct measurement of the local resistances in a ZnO tetrapod by means of impedance spectroscopy: The role of the junction in the overall resistance

Applied physics letters, 2008-07, Vol.93 (4)

2008

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Low-frequency noise in multilayer MoS 2 field-effect transistors: the effect of high-k passivation

Nanoscale, 2014, Vol.6 (1), p.433-441

2014

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Separation of interlayer resistance in multilayer MoS{sub 2} field-effect transistors

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Applied physics letters, 2013-02, Vol.102 (5)

2013

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Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature

Separation of interlayer resistance in multilayer MoS2 field-effect transistors

Triethanolamine doped multilayer MoS2 field effect transistors

Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

Influence of pitch on the morphology and luminescence properties of self-catalyzed GaAsSb nanowire arrays

Photoconductance of aligned SnO2 nanowire field effect transistors

Asymmetric Contacts on a Single SnO2 Nanowire Device: An Investigation Using an Equivalent Circuit Model

Organic/Inorganic Hybrid p--n Junctions Made of Pentacene--SnO2 Nanowires Network

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Highly sensitive hydrogen detection of catalyst-free ZnO nanorod networks suspended by lithography-assisted growth

GaAs/AlGaAs Nanowire Array Solar Cell Grown on Si with Ultrahigh Power-per-Weight Ratio

New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays

Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

White‐Light Emitting Diode Array of p + ‐Si/Aligned n‐SnO 2 Nanowires Heterojunctions

White-Light Emitting Diode Array of p+-Si/Aligned n-SnO2 Nanowires Heterojunctions

In Situ Heat-Induced Replacement of GaAs Nanowires by Au

Triethanolamine doped multilayer MoS2 field effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c7cp00589j

Triethanolamine doped multilayer MoS 2 field effect transistors

Separation of interlayer resistance in multilayer MoS 2 field-effect transistors

A sensitive diagnostic assay of rheumatoid arthritis using three-dimensional ZnO nanorod structure

Asymmetric Contacts on a Single SnO 2 Nanowire Device: An Investigation Using an Equivalent Circuit Model

A direct measurement of the local resistances in a ZnO tetrapod by means of impedance spectroscopy: The role of the junction in the overall resistance

Low-frequency noise in multilayer MoS 2 field-effect transistors: the effect of high-k passivation

Separation of interlayer resistance in multilayer MoS{sub 2} field-effect transistors

Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

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