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Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability

Review of scientific instruments, 2022-11, Vol.93 (11)

2022

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Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular Anisotropy

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.581-587

2021

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Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors

Applied physics letters, 2022-02, Vol.120 (6)

2022

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Total ionizing dose response of 128 analog states in computational charge-trap memory

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.1-1

2024

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A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.208-215

2022

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Single-Event Effects Induced by Heavy Ions in SONOS Charge Trapping Memory Arrays

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.406-413

2022

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Comparison of Radiation Effects in Custom and Commercially Fabricated Resistive Memory Devices

IEEE transactions on nuclear science, 2019-12, Vol.66 (12), p.2398-2407

2019

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Ionizing Radiation Effects in SONOS-Based Neuromorphic Inference Accelerators

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.762-769

2021

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Achieving ideal accuracies in analog neuromorphic computing using periodic carry

2017 Symposium on VLSI Technology, 2017, p.T174-T175

2017

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Resistive memory device requirements for a neural algorithm accelerator

2016 International Joint Conference on Neural Networks (IJCNN), 2016, p.929-938

2016

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The Susceptibility of }-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2997-3004

2014

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Designing and Modeling Analog Neural Network Training Accelerators

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019, p.1-2

2019

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Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in Memristors

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2965-2971

2014

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Progress in SiC MOSFET Reliability

ECS transactions, 2013, Vol.58 (4), p.211-220

2013

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Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO 2 transistors

Applied physics letters, 2022-02, Vol.120 (6)

2022

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Heavy-Ion-Induced Displacement Damage Effects on WOx ECRAM

IEEE transactions on nuclear science, 2024-04, p.1-1

2024

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Defect Interactions of } in }: Implications for ELDRS and Latent Interface Trap Buildup

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3046-3053

2010

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Electroforming-free TaOx memristors using focused ion beam irradiations

Applied physics. A, Materials science & processing, 2018-09, Vol.124 (9), p.1-6, Article 626

2018

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Heavy-Ion-Induced Displacement Damage Effects on WO x ECRAM

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.579-584

2024

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Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.1-1

2024

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Irradiation Effects on Perpendicular Anisotropy Spin-Orbit Torque Magnetic Tunnel Junctions

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.665-670

2021

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Training a Neural Network on Analog TaOx ReRAM Devices Irradiated With Heavy Ions: Effects on Classification Accuracy Demonstrated With CrossSim

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.54-60

2019

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A Comparison of Radiation-Induced and High-Field Electrically Stress Induced Interface Defects in Si/SiO2 MOSFETs via Electrically Detected Magnetic Resonance

2021

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Power signatures of electric field and thermal switching regimes in memristive SET transitions

Journal of physics. D, Applied physics, 2016-05, Vol.49 (24), p.245103-245106

2016

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Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects

2020 IEEE International Integrated Reliability Workshop (IIRW), 2020, p.1-4

2020

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Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability

Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular Anisotropy

Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors

Total ionizing dose response of 128 analog states in computational charge-trap memory

A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance

Single-Event Effects Induced by Heavy Ions in SONOS Charge Trapping Memory Arrays

Comparison of Radiation Effects in Custom and Commercially Fabricated Resistive Memory Devices

Ionizing Radiation Effects in SONOS-Based Neuromorphic Inference Accelerators

Achieving ideal accuracies in analog neuromorphic computing using periodic carry

Resistive memory device requirements for a neural algorithm accelerator

The Susceptibility of }-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose

Designing and Modeling Analog Neural Network Training Accelerators

Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in Memristors

Progress in SiC MOSFET Reliability

Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO 2 transistors

Heavy-Ion-Induced Displacement Damage Effects on WOx ECRAM

Defect Interactions of } in }: Implications for ELDRS and Latent Interface Trap Buildup

Electroforming-free TaOx memristors using focused ion beam irradiations

Heavy-Ion-Induced Displacement Damage Effects on WO x ECRAM

Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

Irradiation Effects on Perpendicular Anisotropy Spin-Orbit Torque Magnetic Tunnel Junctions

Training a Neural Network on Analog TaOx ReRAM Devices Irradiated With Heavy Ions: Effects on Classification Accuracy Demonstrated With CrossSim

A Comparison of Radiation-Induced and High-Field Electrically Stress Induced Interface Defects in Si/SiO2 MOSFETs via Electrically Detected Magnetic Resonance

Power signatures of electric field and thermal switching regimes in memristive SET transitions

Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects

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