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Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials

Journal of crystal growth, 2007-05, Vol.303 (2), p.449-455

2007

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Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.716-723

2009

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IEEE_Xplore

Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode

IEEE transactions on nanotechnology, 2009-03, Vol.8 (2), p.269-274

2009

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IEEE_Xplore

Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate

Electronics letters, 2006-03, Vol.42 (6), p.350-352

2006

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Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

Infrared physics & technology, 2018-11, Vol.94, p.286-290

2018

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Application of advanced (S)TEM methods for the study of nanostructured porous functional surfaces: A few working examples

Materials characterization, 2022-03, Vol.185, p.111741, Article 111741

2022

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Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity

IEEE photonics technology letters, 2000-09, Vol.12 (9), p.1120-1122

2000

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IEEE_Xplore

Temperature dependence of stacking faults in catalyst-free GaAs nanopillars

Nanotechnology, 2013-11, Vol.24 (47), p.475601-475601

2013

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Low threshold half-wave vertical-cavity lasers

Electronics letters, 1994-11, Vol.30 (23), p.1946-1947

1994

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Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors

IEEE journal of selected topics in quantum electronics, 1997-06, Vol.3 (3), p.893-904

1997

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IEEE_Xplore

Self-organised quantum dots as dislocation filters : The case of GaAs-based lasers on silicon

Electronics letters, 2006-01, Vol.42 (2), p.121-123

2006

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Growth of CdS nanowire crystals: Vapor–liquid–solid versus vapor–solid mechanisms

Surface & coatings technology, 2013-09, Vol.230, p.234-238

2013

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Low-threshold oxide-confined 1.3-μm quantum-dot laser

IEEE photonics technology letters, 2000-03, Vol.12 (3), p.230-232

2000

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IEEE_Xplore

Very-low-threshold index-confined planar microcavity lasers

IEEE photonics technology letters, 1995-09, Vol.7 (9), p.965-967

1995

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IEEE_Xplore

Ultralow-threshold cryogenic vertical-cavity surface-emitting laser

IEEE photonics technology letters, 2000-01, Vol.12 (1), p.1-3

2000

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IEEE_Xplore

GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface

Infrared physics & technology, 2015-05, Vol.70, p.168-170

2015

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Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 2000-05, Vol.6 (3), p.452-461

2000

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IEEE_Xplore

Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1636-1641

2006

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IEEE_Xplore

Multiwavelength, densely-packed 2 x 2 vertical-cavity surface-emitting laser array fabricated using selective oxidation

IEEE photonics technology letters, 1996-07, Vol.8 (7), p.858-860

1996

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IEEE_Xplore

Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers

IEEE photonics technology letters, 1999-03, Vol.11 (3), p.301-303

1999

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IEEE_Xplore

Measurement of electro-optic coefficients of 1.3 [micro sign]m self-assembled InAs/GaAs quantum dots

Electronics letters, 2007, Vol.43 (7), p.410

2007

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Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers

IEEE journal of quantum electronics, 1999-08, Vol.35 (8), p.1238-1246

1999

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Room-Temperature Operation of Buffer-Free GaSb-AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 \mum

IEEE photonics technology letters, 2007-10, Vol.19 (20), p.1628-1630

2007

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IEEE_Xplore

Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates

Electronics letters, 2007-02, Vol.43 (4), p.244-245

2007

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Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate

Electronics letters, 2005-04, Vol.41 (9), p.531-532

2005

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Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials

Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode

Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate

Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

Application of advanced (S)TEM methods for the study of nanostructured porous functional surfaces: A few working examples

Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity

Temperature dependence of stacking faults in catalyst-free GaAs nanopillars

Low threshold half-wave vertical-cavity lasers

Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors

Self-organised quantum dots as dislocation filters : The case of GaAs-based lasers on silicon

Growth of CdS nanowire crystals: Vapor–liquid–solid versus vapor–solid mechanisms

Low-threshold oxide-confined 1.3-μm quantum-dot laser

Very-low-threshold index-confined planar microcavity lasers

Ultralow-threshold cryogenic vertical-cavity surface-emitting laser

GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface

Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers

Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate

Multiwavelength, densely-packed 2 x 2 vertical-cavity surface-emitting laser array fabricated using selective oxidation

Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers

Measurement of electro-optic coefficients of 1.3 [micro sign]m self-assembled InAs/GaAs quantum dots

Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers

Room-Temperature Operation of Buffer-Free GaSb-AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 \mum

Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates

Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate

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