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Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

Journal of non-crystalline solids, 2002-05, Vol.303 (1), p.54-63

2002

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High Dielectric Constant Materials: VLSI MOSFET Applications

1. Aufl., 2005

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High-k gate stacks for planar, scaled CMOS integrated circuits

Microelectronic engineering, 2003-09, Vol.69 (2), p.152-167

2003

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Effect of H2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO2

IEEE electron device letters, 2000-09, Vol.21 (9), p.430-432

2000

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Dielectrics for future transistors

Materials Today, 2004-01, Vol.7 (1), p.26-33

2004

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Scaling CMOS

Materials today (Kidlington, England), 2004-01, Vol.7 (1), p.20-25

2004

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Silicon

Encyclopedia of Materials: Science and Technology, 2011, p.8486-8497

Huff, H.R.

2011

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Charge trapping and device performance degradation in MOCVD hafnium-based gate dielectric stack structures

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.597-598

2004

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Plasma nitridation of very thin gate dielectrics

Microelectronic engineering, 2001-11, Vol.59 (1), p.317-322

2001

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Integration issues of high-k gate stack: Process-induced charging

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.479-484

2004

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Effect of H 2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO 2

IEEE electron device letters, 2000-09, Vol.21 (9), p.430-432

2000

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Atomistic model for E' center generation during electrical stress

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002, p.417-418

2002

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High-k Crystalline Gate Dielectrics: A Research Perspective

High Dielectric Constant Materials, p.607-637

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Process and Manufacturing Challenges for High-K Gate Stack Systems

MRS proceedings, 1999, Vol.567, Article 323

1999

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Optimal Scaling Methodologies and Transistor Performance

High Dielectric Constant Materials, p.143-194

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Materials Issues for High-k Gate Dielectric Selection and Integration

High Dielectric Constant Materials, p.253-286

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Electrical Measurement Issues for Alternative Gate Stack Systems

High Dielectric Constant Materials, p.521-566

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SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties

High Dielectric Constant Materials, p.45-90

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Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria

High Dielectric Constant Materials, p.223-251

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Issues in Metal Gate Electrode Selection for Bulk CMOS Devices

High Dielectric Constant Materials, p.415-434

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Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation

High Dielectric Constant Materials, p.195-220

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Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon

High Dielectric Constant Materials, p.359-378

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High-k Gate Dielectric Deposition Technologies

High Dielectric Constant Materials, p.379-413

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Brief Notes on the History of Gate Dielectrics in MOS Devices

High Dielectric Constant Materials, p.33-44

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Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films

High Dielectric Constant Materials, p.483-520

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Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

High Dielectric Constant Materials: VLSI MOSFET Applications

High-k gate stacks for planar, scaled CMOS integrated circuits

Effect of H2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO2

Dielectrics for future transistors

Scaling CMOS

Silicon

Charge trapping and device performance degradation in MOCVD hafnium-based gate dielectric stack structures

Plasma nitridation of very thin gate dielectrics

Integration issues of high-k gate stack: Process-induced charging

Effect of H 2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO 2

Atomistic model for E' center generation during electrical stress

High-k Crystalline Gate Dielectrics: A Research Perspective

Process and Manufacturing Challenges for High-K Gate Stack Systems

Optimal Scaling Methodologies and Transistor Performance

Materials Issues for High-k Gate Dielectric Selection and Integration

Electrical Measurement Issues for Alternative Gate Stack Systems

SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties

Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria

Issues in Metal Gate Electrode Selection for Bulk CMOS Devices

Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation

Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon

High-k Gate Dielectric Deposition Technologies

Brief Notes on the History of Gate Dielectrics in MOS Devices

Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films

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