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Operation of a silicon quantum processor unit cell above one kelvin

Nature (London), 2020-04, Vol.580 (7803), p.350-354

2020

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Coherent spin qubit transport in silicon

Nature communications, 2021-07, Vol.12 (1), p.4114-4114, Article 4114

2021

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Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Nature communications, 2018-08, Vol.9 (1), p.3255-7, Article 3255

2018

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Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout

Nature communications, 2018-10, Vol.9 (1), p.4370-8, Article 4370

2018

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Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Nature communications, 2020-02, Vol.11 (1), p.797-797, Article 797

2020

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Single-spin qubits in isotopically enriched silicon at low magnetic field

Nature communications, 2019-12, Vol.10 (1), p.5500-9, Article 5500

2019

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Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

Journal of physics. Condensed matter, 2015-04, Vol.27 (15), p.154205-154205

2015

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Spin-orbit coupling and operation of multivalley spin qubits

Physical review. B, Condensed matter and materials physics, 2015-11, Vol.92 (20), Article 201401

2015

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A singlet-triplet hole-spin qubit in MOS silicon

Nature communications, 2024-09, Vol.15 (1), p.7690-11, Article 7690

2024

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Single hole transport in a silicon metal-oxide-semiconductor quantum dot

Applied physics letters, 2013-10, Vol.103 (16)

2013

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Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

Physical review applied, 2017-10, Vol.8 (4), Article 044021

2017

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Coherent control of electron spin qubits in silicon using a global field

npj quantum information, 2022-11, Vol.8 (1), p.1-6, Article 126

2022

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A two-qubit logic gate in silicon

Nature (London), 2015-10, Vol.526 (7573), p.410-414

2015

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An addressable quantum dot qubit with fault-tolerant control-fidelity

Nature nanotechnology, 2014-12, Vol.9 (12), p.981-985

2014

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Fidelity benchmarks for two-qubit gates in silicon

Nature (London), 2019-05, Vol.569 (7757), p.532-536

2019

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Controlled shallow single-ion implantation in silicon using an active substrate for sub- 20 - keV ions

Applied physics letters, 2005-05, Vol.86 (20), p.202101-202101-3

2005

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Microsecond resolution of quasiparticle tunneling in the single-Cooper-pair transistor

Physical review letters, 2006-09, Vol.97 (10), p.106603, Article 106603

2006

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Assessment of a Silicon Quantum Dot Spin Qubit Environment via Noise Spectroscopy

Physical review applied, 2018-10, Vol.10 (4), Article 044017

2018

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Single atom devices by ion implantation

Journal of physics. Condensed matter, 2015-04, Vol.27 (15), p.154204-154204

2015

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Impact of g -factors and valleys on spin qubits in a silicon double quantum dot

Physical review. B, 2017-07, Vol.96 (4), Article 045302

2017

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Coulomb blockade in a nanoscale phosphorus-in-silicon island

Microelectronic engineering, 2006-04, Vol.83 (4), p.1809-1813

2006

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Single atom Si nanoelectronics using controlled single-ion implantation

Microelectronic engineering, 2005-03, Vol.78, p.279-286

2005

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Charge sharing in multi-electrode devices for deterministic doping studied by IBIC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-10, Vol.269 (20), p.2336-2339

2011

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Silicon qubit fidelities approaching incoherent noise limits via pulse engineering

Nature electronics, 2019-04, Vol.2 (4), p.151-158

2019

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Implementation of an advanced dressing protocol for global qubit control in silicon

Applied physics reviews, 2022-09, Vol.9 (3)

2022

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Operation of a silicon quantum processor unit cell above one kelvin

Coherent spin qubit transport in silicon

Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Single-spin qubits in isotopically enriched silicon at low magnetic field

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

Spin-orbit coupling and operation of multivalley spin qubits

A singlet-triplet hole-spin qubit in MOS silicon

Single hole transport in a silicon metal-oxide-semiconductor quantum dot

Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

Coherent control of electron spin qubits in silicon using a global field

A two-qubit logic gate in silicon

An addressable quantum dot qubit with fault-tolerant control-fidelity

Fidelity benchmarks for two-qubit gates in silicon

Controlled shallow single-ion implantation in silicon using an active substrate for sub- 20 - keV ions

Microsecond resolution of quasiparticle tunneling in the single-Cooper-pair transistor

Assessment of a Silicon Quantum Dot Spin Qubit Environment via Noise Spectroscopy

Single atom devices by ion implantation

Impact of g -factors and valleys on spin qubits in a silicon double quantum dot

Coulomb blockade in a nanoscale phosphorus-in-silicon island

Single atom Si nanoelectronics using controlled single-ion implantation

Charge sharing in multi-electrode devices for deterministic doping studied by IBIC

Silicon qubit fidelities approaching incoherent noise limits via pulse engineering

Implementation of an advanced dressing protocol for global qubit control in silicon

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