UB Paderborn / Katalog / Suche / in CDI

High Power Current Sensorless Bidirectional 16-Phase Interleaved DC-DC Converter for Hybrid Vehicle Application

IEEE transactions on power electronics, 2012-03, Vol.27 (3), p.1141-1151

2012

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An assessment of wide bandgap semiconductors for power devices

IEEE transactions on power electronics, 2003-05, Vol.18 (3), p.907-914

2003

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Modeling, Simulation, and Validation of a Power SiC BJT

IEEE transactions on power electronics, 2012-10, Vol.27 (10), p.4338-4346

2012

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Circuit simulator models for the diode and IGBT with full temperature dependent features

IEEE transactions on power electronics, 2003-09, Vol.18 (5), p.1220-1229

2003

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Wide and narrow bandgap semiconductors for power electronics: A new valuation

Journal of electronic materials, 2003-06, Vol.32 (6), p.471-477

HUDGINS, Jerry L

2003

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Characterization and modeling of high-voltage field-stop IGBTs

IEEE transactions on industry applications, 2003-07, Vol.39 (4), p.922-928

2003

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Thermal analysis of high-power modules

IEEE transactions on power electronics, 1997-01, Vol.12 (1), p.3-11

1997

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Transient Electrothermal Simulation of Power Semiconductor Devices

IEEE transactions on power electronics, 2010-01, Vol.25 (1), p.237-248

2010

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Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation

IEEE transactions on industry applications, 2008-05, Vol.44 (3), p.894-903

2008

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Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

IEEE transactions on power electronics, 2006-03, Vol.21 (2), p.295-309

2006

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Modeling of IGBT Resistive and Inductive Turn-On Behavior

IEEE transactions on industry applications, 2008-05, Vol.44 (3), p.904-914

2008

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Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects

IEEE transactions on industry applications, 2010-11, Vol.46 (6), p.2556-2567

2010

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Streamer model for ionization growth in a photoconductive power switch

IEEE transactions on power electronics, 1995-09, Vol.10 (5), p.615-620

1995

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The Segmentation of Southern Sociology? Social Research at Historically Black Colleges and Universities

Social forces, 1994-03, Vol.72 (3), p.885-893

Hudgins, John L.

1994

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Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device Model

IEEE transactions on power electronics, 2008-01, Vol.23 (1), p.189-197

2008

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Temperature effects on trench-gate punch-through IGBTs

IEEE transactions on industry applications, 2004-03, Vol.40 (2), p.472-482

2004

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Parameter Extraction Procedure for Vertical SiC Power JFET

IEEE transactions on industry applications, 2011-07, Vol.47 (4), p.1862-1871

2011

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Review of technologies for current-limiting low-voltage circuit breakers

IEEE transactions on industry applications, 1996-09, Vol.32 (5), p.1005-1010

1996

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Simulation and Optimization of Diode and Insulated Gate Bipolar Transistor Interaction in a Chopper Cell Using MATLAB and Simulink

IEEE transactions on industry applications, 2007-07, Vol.43 (4), p.874-883

2007

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Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part II: Parameter Extraction

IEEE transactions on power electronics, 2008-01, Vol.23 (1), p.198-205

2008

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The low-temperature behavior of thyristors

IEEE transactions on electron devices, 1992-04, Vol.39 (4), p.1011-1013

1992

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The low temperature gating characteristics of thyristors

IEEE transactions on industry applications, 1993-07, Vol.29 (4), p.802-805

1993

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Destruction-Free Parameter Extraction for a Physics-Based Circuit Simulator IGCT Model

IEEE transactions on industry applications, 2006-11, Vol.42 (6), p.1395-1402, Article 1395

2006

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Implementation and validation of a physics-based circuit model for IGCT with full temperature dependencies

2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), 2004, Vol.1, p.597-603 Vol.1

2004

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Destruction-free parameter extraction for a physics-based circuit simulator IGCT model

Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting, 2004, Vol.4, p.2542-2549 vol.4

2004

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High Power Current Sensorless Bidirectional 16-Phase Interleaved DC-DC Converter for Hybrid Vehicle Application

An assessment of wide bandgap semiconductors for power devices

Modeling, Simulation, and Validation of a Power SiC BJT

Circuit simulator models for the diode and IGBT with full temperature dependent features

Wide and narrow bandgap semiconductors for power electronics: A new valuation

Characterization and modeling of high-voltage field-stop IGBTs

Thermal analysis of high-power modules

Transient Electrothermal Simulation of Power Semiconductor Devices

Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation

Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

Modeling of IGBT Resistive and Inductive Turn-On Behavior

Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects

Streamer model for ionization growth in a photoconductive power switch

The Segmentation of Southern Sociology? Social Research at Historically Black Colleges and Universities

Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device Model

Temperature effects on trench-gate punch-through IGBTs

Parameter Extraction Procedure for Vertical SiC Power JFET

Review of technologies for current-limiting low-voltage circuit breakers

Simulation and Optimization of Diode and Insulated Gate Bipolar Transistor Interaction in a Chopper Cell Using MATLAB and Simulink

Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part II: Parameter Extraction

The low-temperature behavior of thyristors

The low temperature gating characteristics of thyristors

Destruction-Free Parameter Extraction for a Physics-Based Circuit Simulator IGCT Model

Implementation and validation of a physics-based circuit model for IGCT with full temperature dependencies

Destruction-free parameter extraction for a physics-based circuit simulator IGCT model

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