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Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations

IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2592-2598

2017

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SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

IEEE electron device letters, 2016-10, Vol.37 (10), p.1324-1327

2016

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A Phase Change Material Integrated Press Pack Power Module With Enhanced Overcurrent Capability for Grid Support-A Study on FRD

IEEE transactions on industry applications, 2021-07, Vol.57 (4), p.3956-3968

2021

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Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

IEEE electron device letters, 2016-11, Vol.37 (11), p.1458-1461

2016

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A Snapback Suppressed Reverse-Conducting IGBT With a Floating p-Region in Trench Collector

IEEE electron device letters, 2012-03, Vol.33 (3), p.417-419

2012

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Evaluation of Frequency and Temperature Dependence of Power Losses Difference in Parallel IGBTs

IEEE access, 2020, Vol.8, p.104074-104084

2020

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Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.59-62

2016

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SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, p.49-52

2017

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Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode

IEEE electron device letters, 2012-12, Vol.33 (12), p.1684-1686

2012

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Charge storage effect in SiC trench MOSFET with a floating p-shield and its impact on dynamic performances

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, p.387-390

2017

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Power module with large short-term current capability by using phase change material

Journal of engineering (Stevenage, England), 2019-03, Vol.2019 (16), p.3225-3229

2019

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High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, p.331-334

2017

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A 0.35 μm 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOS

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.397-400

2013

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Proposal of a novel GaN/SiC hybrid FET (HyFET) with enhanced performance for high-voltage switching applications

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.99-102

2016

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Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3328-3333

2022

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Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET

IEEE electron device letters, 2020-09, Vol.41 (9), p.1284-1287

2020

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Sox9 Promotes Cardiomyocyte Apoptosis After Acute Myocardial Infarction by Promoting miR-223-3p and Inhibiting MEF2C

Molecular biotechnology, 2022-08, Vol.64 (8), p.902-913

2022

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Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETs

IEEE transactions on power electronics, 2024-05, Vol.39 (5), p.6312-6326

2024

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Avalanche capability degradation of the parallel-connected SiC MOSFETs

Microelectronics and reliability, 2023-03, Vol.142, p.114926, Article 114926

2023

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Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2342-2348

2024

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A High-Precision Sensor Based on AC Flux Cancellation for DC Bias Detection in Dual Active Bridge Converters

IEEE transactions on power electronics, 2022-11, Vol.37 (11), p.13513-13524

2022

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Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range

IEEE transactions on power electronics, 2022-06, Vol.37 (6), p.6237-6241

2022

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Bias Temperature Instability of Silicon Carbide Power MOSFET Under AC Gate Stresses

IEEE transactions on power electronics, 2022-02, Vol.37 (2), p.1998-2008

2022

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Gate Drive Method for Reducing Threshold Voltage Drift of Silicon Carbide MOSFET

IEEE journal of emerging and selected topics in power electronics, 2024-07, p.1-1

2024

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Simulation Study of a Power MOSFET With Built-in Channel Diode for Enhanced Reverse Recovery Performance

IEEE electron device letters, 2019-01, Vol.40 (1), p.79-82

2019

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Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations

SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

A Phase Change Material Integrated Press Pack Power Module With Enhanced Overcurrent Capability for Grid Support-A Study on FRD

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

A Snapback Suppressed Reverse-Conducting IGBT With a Floating p-Region in Trench Collector

Evaluation of Frequency and Temperature Dependence of Power Losses Difference in Parallel IGBTs

Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss

SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications

Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode

Charge storage effect in SiC trench MOSFET with a floating p-shield and its impact on dynamic performances

Power module with large short-term current capability by using phase change material

High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture

A 0.35 μm 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOS

Proposal of a novel GaN/SiC hybrid FET (HyFET) with enhanced performance for high-voltage switching applications

Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs

Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET

Sox9 Promotes Cardiomyocyte Apoptosis After Acute Myocardial Infarction by Promoting miR-223-3p and Inhibiting MEF2C

Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETs

Avalanche capability degradation of the parallel-connected SiC MOSFETs

Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift

A High-Precision Sensor Based on AC Flux Cancellation for DC Bias Detection in Dual Active Bridge Converters

Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range

Bias Temperature Instability of Silicon Carbide Power MOSFET Under AC Gate Stresses

Gate Drive Method for Reducing Threshold Voltage Drift of Silicon Carbide MOSFET

Simulation Study of a Power MOSFET With Built-in Channel Diode for Enhanced Reverse Recovery Performance

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