UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.200-205

2024

Volltextzugriff (PDF)

Mura defect detection based on effective background reconstruction and contrast enhancement

Ye jing yu xian shi, 2021, Vol.36 (10), p.1395-1402

2021

Volltextzugriff (PDF)

Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4874-4878

2024

Volltextzugriff (PDF)

Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs

IEEE electron device letters, 2022-10, Vol.43 (10), p.1617-1620

2022

Volltextzugriff (PDF)

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.449-453

2023

Volltextzugriff (PDF)

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

IEEE electron device letters, 2022-10, Vol.43 (10), p.1625-1628

2022

Volltextzugriff (PDF)

Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations

Microelectronics and reliability, 2023-06, Vol.145, p.114983, Article 114983

2023

Volltextzugriff (PDF)

Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT)

Microelectronics and reliability, 2023-11, Vol.150, p.115215, Article 115215

2023

Volltextzugriff (PDF)

Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures

Microelectronics and reliability, 2023-11, Vol.150, p.115141, Article 115141

2023

Volltextzugriff (PDF)

Facile synthesis of well-shaped spinel LiNi0.5Mn1.5O4 nanoparticles as cathode materials for lithium ion batteries

RSC advances, 2016-01, Vol.6 (4), p.2785-2792

2016

Volltextzugriff (PDF)

Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

Microelectronics and reliability, 2021-07, Vol.122, p.114150, Article 114150

2021

Volltextzugriff (PDF)

200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.319-322

2024

Volltextzugriff (PDF)

A Novel Gate Driver with Charge Sharing Technique to Optimize Gate Turn-On/Turn-Off Overshoot and Switching Loss Trade-off in SiC Power MOSFETs

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.184-187

2024

Volltextzugriff (PDF)

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.139-142

2023

Volltextzugriff (PDF)

Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs

2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2023, p.1-4

2023

Volltextzugriff (PDF)

Capacitance-Dependent V TH Instability Under a High dV g /dt Event in p-GaN Power HEMTs

IEEE electron device letters, 2022-10, Vol.43 (10), p.1617-1620

2022

Volltextzugriff (PDF)

Metal-catalyst-free Growth and Characterization of Nitrogen-doped Carbon Nanotubes: Metal-catalyst-free Growth and Characterization of Nitrogen-doped Carbon Nanotubes

Wu ji cai liao xue bao, 2011-08, Vol.26 (8), p.881-884

2011

Volltextzugriff (PDF)

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

Microelectronics and reliability, 2022-07, Vol.134, p.114568, Article 114568

2022

Volltextzugriff (PDF)

Promoting neurogenesis in hippocampal dentate gyrus of chronic unpredictable stress-induced depressive-like rats with paeoniflorin

Journal of integrative neuroscience, 2019-03, Vol.18 (1), p.43-49

2019

Volltextzugriff (PDF)

Industry perspective on power electronics for electric vehicles

Nature Reviews Electrical Engineering, 2024-06, Vol.1 (7), p.435-452

2024

Volltextzugriff (PDF)

Facile synthesis of well-shaped spinel LiNi 0.5 Mn 1.5 O 4 nanoparticles as cathode materials for lithium ion batteries

RSC advances, 2016, Vol.6 (4), p.2785-2792

2016

Volltextzugriff (PDF)

Facile synthesis of well-shaped spinel LiNi0.5Mn1.5O4 nanoparticles as cathode materials for lithium ion batteriesElectronic supplementary information (ESI) available. See DOI: 10.1039/c5ra21723g

2016-01

Volltextzugriff (PDF)

Prognostic Analysis of 102 Patients with Synchronous Colorectal Cancer and Liver Metastases Treated with Simultaneous Resection

Chinese medical journal, 2017-06, Vol.130 (11), p.1283-1289

2017

Volltextzugriff (PDF)

Landscape, pedestrian and dayu ridge post road--a study on tourism history

Huang, Hong Zhen

2008

Volltextzugriff (PDF)

Excision Repair Cross-complementation Group 1 is a Prognostic Biomarker in Patients with Colorectal Cancer Receiving Chemotherapy

Chinese medical journal, 2016-03, Vol.129 (5), p.586-593

2016

Volltextzugriff (PDF)

1 – 25 von 318

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(257)
Mit Volltextzugriff
(266)

Publikationsform

Sprache

Englisch
(273)
Chinesisch
(47)

Erscheinungsjahr

n.n

Thema

Science & Technology
(185)
Life Sciences & Biomedicine
(109)
Humans
(74)
Physical Sciences
(61)
Female
(50)
Male
(50)
Technology
(42)
Middle Aged
(38)
Aged
(32)
Chemistry
(31)
Adult
(29)
Physics
(27)
Engineering
(26)
China
(24)
Animals
(21)
Chemistry, Multidisciplinary
(21)
Materials Science
(20)
General & Internal Medicine
(19)
Medicine, General & Internal
(18)
Materials Science, Multidisciplinary
(17)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 7 Tagen
(1)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors

Mura defect detection based on effective background reconstruction and contrast enhancement

Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode

Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations

Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT)

Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures

Facile synthesis of well-shaped spinel LiNi0.5Mn1.5O4 nanoparticles as cathode materials for lithium ion batteries

Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability

A Novel Gate Driver with Charge Sharing Technique to Optimize Gate Turn-On/Turn-Off Overshoot and Switching Loss Trade-off in SiC Power MOSFETs

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs

Capacitance-Dependent V TH Instability Under a High dV g /dt Event in p-GaN Power HEMTs

Metal-catalyst-free Growth and Characterization of Nitrogen-doped Carbon Nanotubes: Metal-catalyst-free Growth and Characterization of Nitrogen-doped Carbon Nanotubes

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

Promoting neurogenesis in hippocampal dentate gyrus of chronic unpredictable stress-induced depressive-like rats with paeoniflorin

Industry perspective on power electronics for electric vehicles

Facile synthesis of well-shaped spinel LiNi 0.5 Mn 1.5 O 4 nanoparticles as cathode materials for lithium ion batteries

Facile synthesis of well-shaped spinel LiNi0.5Mn1.5O4 nanoparticles as cathode materials for lithium ion batteriesElectronic supplementary information (ESI) available. See DOI: 10.1039/c5ra21723g

Prognostic Analysis of 102 Patients with Synchronous Colorectal Cancer and Liver Metastases Treated with Simultaneous Resection

Landscape, pedestrian and dayu ridge post road--a study on tourism history

Excision Repair Cross-complementation Group 1 is a Prognostic Biomarker in Patients with Colorectal Cancer Receiving Chemotherapy

Suchergebnisse filtern