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Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.200-205

2024

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Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4874-4878

2024

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Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs

IEEE electron device letters, 2022-10, Vol.43 (10), p.1617-1620

2022

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High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

IEEE electron device letters, 2022-10, Vol.43 (10), p.1625-1628

2022

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Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.449-453

2023

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Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations

Microelectronics and reliability, 2023-06, Vol.145, p.114983, Article 114983

2023

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Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT)

Microelectronics and reliability, 2023-11, Vol.150, p.115215, Article 115215

2023

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Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures

Microelectronics and reliability, 2023-11, Vol.150, p.115141, Article 115141

2023

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Facile synthesis of well-shaped spinel LiNi0.5Mn1.5O4 nanoparticles as cathode materials for lithium ion batteries

RSC advances, 2016-01, Vol.6 (4), p.2785-2792

2016

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Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

Microelectronics and reliability, 2021-07, Vol.122, p.114150, Article 114150

2021

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Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.139-142

2023

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Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs

2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2023, p.1-4

2023

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Capacitance-Dependent V TH Instability Under a High dV g /dt Event in p-GaN Power HEMTs

IEEE electron device letters, 2022-10, Vol.43 (10), p.1617-1620

2022

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Metal-catalyst-free Growth and Characterization of Nitrogen-doped Carbon Nanotubes: Metal-catalyst-free Growth and Characterization of Nitrogen-doped Carbon Nanotubes

Wu ji cai liao xue bao, 2011-08, Vol.26 (8), p.881-884

2011

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Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

Microelectronics and reliability, 2022-07, Vol.134, p.114568, Article 114568

2022

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200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.319-322

2024

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A Novel Gate Driver with Charge Sharing Technique to Optimize Gate Turn-On/Turn-Off Overshoot and Switching Loss Trade-off in SiC Power MOSFETs

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.184-187

2024

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Promoting neurogenesis in hippocampal dentate gyrus of chronic unpredictable stress-induced depressive-like rats with paeoniflorin

Journal of integrative neuroscience, 2019-03, Vol.18 (1), p.43-49

2019

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Facile synthesis of well-shaped spinel LiNi 0.5 Mn 1.5 O 4 nanoparticles as cathode materials for lithium ion batteries

RSC advances, 2016, Vol.6 (4), p.2785-2792

2016

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Facile synthesis of well-shaped spinel LiNi0.5Mn1.5O4 nanoparticles as cathode materials for lithium ion batteriesElectronic supplementary information (ESI) available. See DOI: 10.1039/c5ra21723g

2016-01

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Prognostic Analysis of 102 Patients with Synchronous Colorectal Cancer and Liver Metastases Treated with Simultaneous Resection

Chinese medical journal, 2017-06, Vol.130 (11), p.1283-1289

2017

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Landscape, pedestrian and dayu ridge post road--a study on tourism history

Huang, Hong Zhen

2008

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Excision Repair Cross-complementation Group 1 is a Prognostic Biomarker in Patients with Colorectal Cancer Receiving Chemotherapy

Chinese medical journal, 2016-03, Vol.129 (5), p.586-593

2016

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Chinese leek（Allium tuberosum Rottler ex Sprengel） reduced disease symptom caused by root-knot nematode

农业科学学报：英文版, 2016 (2), p.364-372

HUANG Yong-hong MAO Zhen-chuan XIE Bing-yan

2016

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Chinese leek (Allium tuberosum Rottler ex Sprengel) reduced disease symptom caused by root-knot nematode

Journal of Integrative Agriculture, 2016-02, Vol.15 (2), p.364-372

2016

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Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors

Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode

Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations

Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT)

Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures

Facile synthesis of well-shaped spinel LiNi0.5Mn1.5O4 nanoparticles as cathode materials for lithium ion batteries

Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs

Capacitance-Dependent V TH Instability Under a High dV g /dt Event in p-GaN Power HEMTs

Metal-catalyst-free Growth and Characterization of Nitrogen-doped Carbon Nanotubes: Metal-catalyst-free Growth and Characterization of Nitrogen-doped Carbon Nanotubes

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability

A Novel Gate Driver with Charge Sharing Technique to Optimize Gate Turn-On/Turn-Off Overshoot and Switching Loss Trade-off in SiC Power MOSFETs

Promoting neurogenesis in hippocampal dentate gyrus of chronic unpredictable stress-induced depressive-like rats with paeoniflorin

Facile synthesis of well-shaped spinel LiNi 0.5 Mn 1.5 O 4 nanoparticles as cathode materials for lithium ion batteries

Facile synthesis of well-shaped spinel LiNi0.5Mn1.5O4 nanoparticles as cathode materials for lithium ion batteriesElectronic supplementary information (ESI) available. See DOI: 10.1039/c5ra21723g

Prognostic Analysis of 102 Patients with Synchronous Colorectal Cancer and Liver Metastases Treated with Simultaneous Resection

Landscape, pedestrian and dayu ridge post road--a study on tourism history

Excision Repair Cross-complementation Group 1 is a Prognostic Biomarker in Patients with Colorectal Cancer Receiving Chemotherapy

Chinese leek（Allium tuberosum Rottler ex Sprengel） reduced disease symptom caused by root-knot nematode

Chinese leek (Allium tuberosum Rottler ex Sprengel) reduced disease symptom caused by root-knot nematode

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