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Decellularization and Recellularization Technologies in Tissue Engineering

Cell Transplantation, 2014-05, Vol.23 (4-5), p.621-630

2014

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Adipose-Derived Stem Cells: Isolation, Characterization, and Differentiation Potential

Cell Transplantation, 2013-04, Vol.22 (4), p.701-709

2013

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Severe bilateral ischemic-reperfusion renal injury: hyperacute and acute changes in apparent diffusion coefficient, T1, and T2 mapping with immunohistochemical correlations

Scientific reports, 2017-05, Vol.7 (1), p.1725-10, Article 1725

2017

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Unipolar resistive switching in a transparent ITO/SiOx/ITO sandwich fabricated at room temperature

Solid state communications, 2013-04, Vol.159, p.13-17

2013

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Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer

Applied physics letters, 2013-04, Vol.102 (14)

2013

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Stem Cell Applications in Regenerative Medicine for Neurological Disorders

Cell Transplantation, 2013-04, Vol.22 (4), p.631-637

2013

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Aberrant Alternative Splicing Events in Parkinson's Disease

Cell Transplantation, 2013-04, Vol.22 (4), p.653-661

2013

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Normally-off AlGaN/GaN high-electron-mobility transistor on Si(111) by recessed gate and fluorine plasma treatment

Japanese Journal of Applied Physics, 2016-01, Vol.55 (1S), p.1

2016

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Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Hybridization of CsPbBr1.5I1.5 perovskite quantum dots with 9,9-dihexylfluorene co-oligomer for white electroluminescence

Organic electronics, 2017-05, Vol.44, p.6-10

2017

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Light Emission Characteristics of Nonpolar a -Plane GaN-Based Photonic Crystal Defect Cavities

IEEE journal of quantum electronics, 2016-09, Vol.52 (9), p.1-7

2016

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IEEE_Xplore

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

ACS nano, 2017-11, Vol.11 (11), p.11015-11023

2017

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Influence of B2O3 Additive on Microwave Dielectric Properties of Li2ZnTi3O8 Ceramics for LTCC Applications

International journal of applied ceramic technology, 2013-09, Vol.10 (s1), p.E49-E56

2013

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The GaN-Based Light Emitting Diode Grown on Nanopattern Sapphire Substrate Prepared by Inductively Coupled Plasma Etching

IEEE transactions on plasma science, 2014-12, Vol.42 (12), p.3792-3796

2014

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IEEE_Xplore

The effect of a temperature-varying sandwich buffer layer structure on GaN epitaxial layer grown on Si substrate

Journal of crystal growth, 2013-05, Vol.370, p.273-277

2013

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Salvianolic Acid B Maintained Stem Cell Pluripotency and Increased Proliferation Rate by Activating Jak2–Stat3 Combined with EGFR–Erk1/2 Pathways

Cell transplantation, 2014-01, Vol.23 (4-5), p.657-668

2014

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Performance improvement of GaN-based metal-semiconductor-metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EH08-3

2014

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Enhanced Performance of Nitride-Based Blue LED With Step-Stage MQW Structure

IEEE photonics technology letters, 2011-03, Vol.23 (5), p.287-289

2011

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IEEE_Xplore

Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JL15-08JL15-4

2013

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Enhancement of Optical Polarization Anisotropy of $a$-Plane InGaN/GaN Multiple Quantum Well Structure from Violet to Blue-Green Light

Japanese Journal of Applied Physics, 2013-01, Vol.52 (1), p.01AG01-01AG01-4

2013

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Improvement of a-plane GaN crystalline quality by overgrowth of in situ etched GaN template

Journal of crystal growth, 2011-01, Vol.315 (1), p.192-195

2011

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New Energy Materials and Device Application

International Journal of Photoenergy, 2015-01, Vol.2015, p.1-1

2015

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Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JL17-08JL17-3

2013

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Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2013-01, Vol.52 (1), p.01AG04-01AG04-4

2013

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Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer

Applied surface science, 2015-11, Vol.354, p.148-154

2015

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Decellularization and Recellularization Technologies in Tissue Engineering

Adipose-Derived Stem Cells: Isolation, Characterization, and Differentiation Potential

Severe bilateral ischemic-reperfusion renal injury: hyperacute and acute changes in apparent diffusion coefficient, T1, and T2 mapping with immunohistochemical correlations

Unipolar resistive switching in a transparent ITO/SiOx/ITO sandwich fabricated at room temperature

Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer

Stem Cell Applications in Regenerative Medicine for Neurological Disorders

Aberrant Alternative Splicing Events in Parkinson's Disease

Normally-off AlGaN/GaN high-electron-mobility transistor on Si(111) by recessed gate and fluorine plasma treatment

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Hybridization of CsPbBr1.5I1.5 perovskite quantum dots with 9,9-dihexylfluorene co-oligomer for white electroluminescence

Light Emission Characteristics of Nonpolar a -Plane GaN-Based Photonic Crystal Defect Cavities

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

Influence of B2O3 Additive on Microwave Dielectric Properties of Li2ZnTi3O8 Ceramics for LTCC Applications

The GaN-Based Light Emitting Diode Grown on Nanopattern Sapphire Substrate Prepared by Inductively Coupled Plasma Etching

The effect of a temperature-varying sandwich buffer layer structure on GaN epitaxial layer grown on Si substrate

Salvianolic Acid B Maintained Stem Cell Pluripotency and Increased Proliferation Rate by Activating Jak2–Stat3 Combined with EGFR–Erk1/2 Pathways

Performance improvement of GaN-based metal-semiconductor-metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

Enhanced Performance of Nitride-Based Blue LED With Step-Stage MQW Structure

Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes

Enhancement of Optical Polarization Anisotropy of $a$-Plane InGaN/GaN Multiple Quantum Well Structure from Violet to Blue-Green Light

Improvement of a-plane GaN crystalline quality by overgrowth of in situ etched GaN template

New Energy Materials and Device Application

Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region

Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes

Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer

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