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Seventy years of study on ethnic paleography in China

International journal of anthropology and ethnology, 2024-12, Vol.8 (1), p.9-27

2024

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Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner

Nanomaterials (Basel, Switzerland), 2022-11, Vol.12 (22), p.4057

2022

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Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2

Journal of semiconductors, 2020-06, Vol.41 (6), p.89-92

2020

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Design and fabrication of a 3.3 kV 4H-SiC MOSFET

Journal of semiconductors, 2015-09, Vol.36 (9), p.54-57

黄润华陶永洪柏松陈刚汪玲刘奥卫能李赟赵志飞

2015

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Piecewise Linear Approximation for Extraction of JFET Resistance in SiC MOSFET

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4455-4461

2018

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Sequential learning navigation method and general correction model for Autonomous Underwater Vehicle

Ocean engineering, 2023-06, Vol.278, p.114347, Article 114347

2023

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Development of 17 kV 4H-SiC PiN diode

Journal of semiconductors, 2016-08, Vol.37 (8), p.45-48

黄润华陶永洪汪玲陈刚柏松栗锐李赟赵志飞

2016

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Investigations on degradation and optimization of 1.2kV 4H-SiC MOSFET under repetitive unclamped inductive switching stress

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.205-208

2015

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Development of 10 kV 4H-SiC JBS diode with FGR termination

Journal of semiconductors, 2014-07, Vol.35 (7), p.56-59

黄润华陶永洪曹鹏飞汪玲陈刚柏松栗瑞李赟赵志飞

2014

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Theory and Design of Novel Power Poly-Si/SiC Heterojunction Tunneling Transistor Structure

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.6086-6092

2023

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Failure Mechanism Analysis of Single-Event Effect in 4H-SiC Inverters

IEEE transactions on electron devices, 2024-10, Vol.71 (10), p.1-5

2024

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200 V All-SiC Floating Gate Driver Process Platform on 4H-SiC P-epi/N+ Substate for High-Temperature Applications

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.5138-5141

2024

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X-ray detector with internal gain based on a SiC npn structure

IEEE electron device letters, 2024-08, p.1-1

2024

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Advances in laser processed material of soft sensing and soft actuation

Materials today communications, 2023-12, Vol.37, p.107187, Article 107187

2023

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Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation

IEEE electron device letters, 2024-04, Vol.45 (4), p.542-545

2024

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4H–SiC trench MOSFET with Inverted-T groove

Micro and nanostructures (2022), 2023-03, Vol.175, p.207510, Article 207510

2023

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Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs

Journal of crystal growth, 2020-02, Vol.531, p.125338, Article 125338

2020

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A Clinical Dataset and Various Baselines for Chromosome Instance Segmentation

IEEE/ACM transactions on computational biology and bioinformatics, 2022-01, Vol.19 (1), p.31-39

2022

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Optimization of junction termination extension for ultrahigh voltage 4H-SiC planar power devices

Journal of semiconductors, 2017-04, Vol.38 (4), p.44004

2017

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FOA-based QR-factorized CKF Algorithm for AUV Navigation

OCEANS 2022, Hampton Roads, 2022, p.1-5

2022

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Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

Journal of semiconductors, 2018-03, Vol.39 (3), p.34005

2018

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Research on Threshold Voltage Instability in SiC MOSFET Devices with Precision Measurement

Materials science forum, 2019-05, Vol.954, p.133-138

2019

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Analysis of Leakage Mechanism in Irradiated 4H-SiC INV and NOR Logic Gate Circuits

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.116-119

2024

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First Demonstration of All-SiC Half-Bridge Gate Driver with High-Side Floating Substrate Region

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.502-505

2024

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Low on-resistance 1.2 kV 4H-SiC power MOSFET with R on, sp of 3.4 mΩ·cm 2

Journal of semiconductors, 2020-06, Vol.41 (6), p.62801

2020

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Seventy years of study on ethnic paleography in China

Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner

Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2

Design and fabrication of a 3.3 kV 4H-SiC MOSFET

Piecewise Linear Approximation for Extraction of JFET Resistance in SiC MOSFET

Sequential learning navigation method and general correction model for Autonomous Underwater Vehicle

Development of 17 kV 4H-SiC PiN diode

Investigations on degradation and optimization of 1.2kV 4H-SiC MOSFET under repetitive unclamped inductive switching stress

Development of 10 kV 4H-SiC JBS diode with FGR termination

Theory and Design of Novel Power Poly-Si/SiC Heterojunction Tunneling Transistor Structure

Failure Mechanism Analysis of Single-Event Effect in 4H-SiC Inverters

200 V All-SiC Floating Gate Driver Process Platform on 4H-SiC P-epi/N+ Substate for High-Temperature Applications

X-ray detector with internal gain based on a SiC npn structure

Advances in laser processed material of soft sensing and soft actuation

Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation

4H–SiC trench MOSFET with Inverted-T groove

Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs

A Clinical Dataset and Various Baselines for Chromosome Instance Segmentation

Optimization of junction termination extension for ultrahigh voltage 4H-SiC planar power devices

FOA-based QR-factorized CKF Algorithm for AUV Navigation

Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

Research on Threshold Voltage Instability in SiC MOSFET Devices with Precision Measurement

Analysis of Leakage Mechanism in Irradiated 4H-SiC INV and NOR Logic Gate Circuits

First Demonstration of All-SiC Half-Bridge Gate Driver with High-Side Floating Substrate Region

Low on-resistance 1.2 kV 4H-SiC power MOSFET with R on, sp of 3.4 mΩ·cm 2

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