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Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

IEEE electron device letters, 2015-03, Vol.36 (3), p.232-234

2015

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Characterizations of Amorphous IGZO Thin-Film Transistors With Low Subthreshold Swing

IEEE electron device letters, 2011-09, Vol.32 (9), p.1245-1247

2011

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InGaN-GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks

IEEE journal of quantum electronics, 2008-05, Vol.44 (5), p.468-472

2008

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Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1505-1510

2017

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Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement

Thin solid films, 2013-07, Vol.540, p.247-250

2013

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Application of Nanosphere Lithography to LED Surface Texturing and to the Fabrication of Nanorod LED Arrays

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1242-1249

2009

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Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

IEEE journal of quantum electronics, 2015-05, Vol.51 (5), p.1-5

2015

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Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod Arrays

IEEE photonics technology letters, 2009-11, Vol.21 (22), p.1683-1685

2009

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Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

IEEE electron device letters, 2011-02, Vol.32 (2), p.182-184

2011

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Role of } / } Gate Dielectric on the Reduction of Low-Frequent Noise and the Enhancement of a-IGZO TFT Electrical Performance

Journal of display technology, 2012-12, Vol.8 (12), p.695-698

2012

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Contributions of sidewall illumination and current spreading to the light emission of InGaN-GaN light-emitting diode arrays

IEEE photonics technology letters, 2006-04, Vol.18 (8), p.983-985

2006

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Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrate

Solid-state electronics, 2015-02, Vol.104, p.122-125

2015

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Quasi-static capacitance–voltage characterizations of carrier accumulation and depletion phenomena in pentacene thin film transistors

Solid-state electronics, 2008-02, Vol.52 (2), p.269-274

2008

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Transparent ZnO Thin-Film Transistors on Glass and Plastic Substrates Using Post-Sputtering Oxygen Passivation

Journal of display technology, 2009-06, Vol.5 (6), p.192-197

2009

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High-speed modulation from the fast mode extraction of a photonic crystal light-emitting diode

Journal of applied physics, 2016-01, Vol.119 (1)

2016

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GaN-based LEDs with photonic crystal nanorod sidewall reflectors for versatile radiation directionality control

CLEO: 2011 - Laser Science to Photonic Applications, 2011, p.1-2

2011

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High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes

Optics express, 2010-04, Vol.18 (8), p.7664-7669

2010

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GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength

Optics express, 2008-07, Vol.16 (14), p.10549-10556

2008

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Nanoparticle-coated n-ZnO/p-Si photodiodes with improved photoresponsivities and acceptance angles for potential solar cell applications

Nanotechnology, 2009-06, Vol.20 (24), p.245204-245204 (6)

2009

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Current collapse suppression by SiO2 passivation in p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016, p.1-2

2016

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Correlation of angular light profiles of light-emitting diodes to spatial spontaneous emissions from photonic crystals

Journal of applied physics, 2013-10, Vol.114 (14)

2013

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Nitride Semiconductor Light-Emitting Diodes (LEDs) - Materials, Technologies, and Applications (2nd Edition)

Second edition., 2018

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Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays

Optics express, 2011-07, Vol.19 Suppl 4 (S4), p.A900-A907

2011

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Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays

Nanotechnology, 2011-01, Vol.22 (4), p.045202-045202

2011

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Role of hbox HfO 2 / hbox SiO 2 Gate Dielectric on the Reduction of Low-Frequent Noise and the Enhancement of a-IGZO TFT Electrical Performance

Journal of display technology, 2012-12, Vol.8 (12), p.695-698

2012

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Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

Characterizations of Amorphous IGZO Thin-Film Transistors With Low Subthreshold Swing

InGaN-GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks

Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement

Application of Nanosphere Lithography to LED Surface Texturing and to the Fabrication of Nanorod LED Arrays

Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod Arrays

Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

Role of } / } Gate Dielectric on the Reduction of Low-Frequent Noise and the Enhancement of a-IGZO TFT Electrical Performance

Contributions of sidewall illumination and current spreading to the light emission of InGaN-GaN light-emitting diode arrays

Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrate

Quasi-static capacitance–voltage characterizations of carrier accumulation and depletion phenomena in pentacene thin film transistors

Transparent ZnO Thin-Film Transistors on Glass and Plastic Substrates Using Post-Sputtering Oxygen Passivation

High-speed modulation from the fast mode extraction of a photonic crystal light-emitting diode

GaN-based LEDs with photonic crystal nanorod sidewall reflectors for versatile radiation directionality control

High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes

GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength

Nanoparticle-coated n-ZnO/p-Si photodiodes with improved photoresponsivities and acceptance angles for potential solar cell applications

Current collapse suppression by SiO2 passivation in p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors

Correlation of angular light profiles of light-emitting diodes to spatial spontaneous emissions from photonic crystals

Nitride Semiconductor Light-Emitting Diodes (LEDs) - Materials, Technologies, and Applications (2nd Edition)

Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays

Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays

Role of hbox HfO 2 / hbox SiO 2 Gate Dielectric on the Reduction of Low-Frequent Noise and the Enhancement of a-IGZO TFT Electrical Performance

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