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Separation of channel backscattering coefficients in nanoscale MOSFETs

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1409-1415

2004

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IEEE_Xplore

Edge hole direct tunneling leakage in ultrathin gate oxide p-channel MOSFETs

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2790-2795

2001

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IEEE_Xplore

25 nm CMOS Omega FETs

Digest. International Electron Devices Meeting, 2002, p.255-258

2002

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IEEE_Xplore

Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET's

IEEE electron device letters, 1998-04, Vol.19 (4), p.134-136

1998

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IEEE_Xplore

Cell-based analytic statistical model with correlated parameters for intrinsic breakdown of ultrathin oxides

IEEE electron device letters, 1999-10, Vol.20 (10), p.523-525

1999

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IEEE_Xplore

Forward gated-diode measurement of filled traps in high-field stressed thin oxides

IEEE transactions on electron devices, 2000-08, Vol.47 (8), p.1682-1683

2000

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IEEE_Xplore

Monte Carlo Sphere Model for Effective Oxide Thinning Induced Extrinsic Breakdown

Japanese Journal of Applied Physics, 2000, Vol.39 (4S), p.2026-2029

2000

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A trap generation closed-form statistical model for intrinsic oxide breakdown

IEEE transactions on electron devices, 2001-06, Vol.48 (6), p.1275-1277

2001

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IEEE_Xplore

Temperature dependent channel backscattering coefficients in nanoscale MOSFETs

Digest. International Electron Devices Meeting, 2002, p.39-42

2002

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IEEE_Xplore

A physical model for hole direct tunneling current in p+ poly-gate pMOSFETs with ultrathin gate oxides

IEEE transactions on electron devices, 2000-11, Vol.47 (11), p.2161-2166

2000

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A trap generation statistical model in closed-form for intrinsic breakdown of ultra-thin oxides

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453), 1999, p.70-73

1999

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IEEE_Xplore

On the SiO/sub 2/-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 /spl mu/m CMOS logic technology

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.442-448

2002

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IEEE_Xplore

On the SiO(2)-based gate-dielectric scaling limit forlow-standby power applications in the context of a 0.13 mu m CMOS logictechnology

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.442-448

2002

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On the SiO2-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 [mu]m CMOS logic technology

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.442

2002

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On the SiO/sub 2/-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 μm CMOS logic technology

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.442-448

2002

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On the SiO sub(2)-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 mu m CMOS logic technology

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.442-447

2002

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A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

IEEE transactions on electron devices, 2000-11, Vol.47 (11), p.2161-2166

2000

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IEEE_Xplore

Synthesis of Highly Fluorescent Gold Nanoparticles for Sensing Mercury(II)

Angewandte Chemie (International ed.), 2007-01, Vol.46 (36), p.6824-6828

2007

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Self-Assembly of Antimicrobial Peptides on Gold Nanodots: Against Multidrug-Resistant Bacteria and Wound-Healing Application

Advanced functional materials, 2015-12, Vol.25 (46), p.7189-7199

2015

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Gold nanoparticle probes for the detection of mercury, lead and copper ions

Analyst (London), 2011-03, Vol.136 (5), p.863-871

2011

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Physical model for hole direct tunneling current in P super(+) poly-gate PMOSFETs with ultrathin gate oxides

IEEE transactions on electron devices, 2000-11, Vol.47 (11), p.2161-2166

2000

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Silver nanoclusters as fluorescent probes for selective and sensitive detection of copper ions

Chemical communications (Cambridge, England), 2010-01, Vol.46 (8), p.1257-1259

2010

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Selective Gold-Nanoparticle-Based “Turn-On” Fluorescent Sensors for Detection of Mercury(II) in Aqueous Solution

Analytical chemistry (Washington), 2006-12, Vol.78 (24), p.8332-8338

2006

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Highly Selective DNA-Based Sensor for Lead(II) and Mercury(II) Ions

Analytical chemistry (Washington), 2009-03, Vol.81 (6), p.2383-2387

2009

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Parameters for selective colorimetric sensing of mercury(II) in aqueous solutions using mercaptopropionic acid-modified gold nanoparticles

Chemical communications (Cambridge, England), 2007-01 (12), p.1215-1217

2007

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Separation of channel backscattering coefficients in nanoscale MOSFETs

Edge hole direct tunneling leakage in ultrathin gate oxide p-channel MOSFETs

25 nm CMOS Omega FETs

Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET's

Cell-based analytic statistical model with correlated parameters for intrinsic breakdown of ultrathin oxides

Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Monte Carlo Sphere Model for Effective Oxide Thinning Induced Extrinsic Breakdown

A trap generation closed-form statistical model for intrinsic oxide breakdown

Temperature dependent channel backscattering coefficients in nanoscale MOSFETs

A physical model for hole direct tunneling current in p+ poly-gate pMOSFETs with ultrathin gate oxides

A trap generation statistical model in closed-form for intrinsic breakdown of ultra-thin oxides

On the SiO/sub 2/-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 /spl mu/m CMOS logic technology

On the SiO(2)-based gate-dielectric scaling limit forlow-standby power applications in the context of a 0.13 mu m CMOS logictechnology

On the SiO2-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 [mu]m CMOS logic technology

On the SiO/sub 2/-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 μm CMOS logic technology

On the SiO sub(2)-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 mu m CMOS logic technology

A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

Synthesis of Highly Fluorescent Gold Nanoparticles for Sensing Mercury(II)

Self-Assembly of Antimicrobial Peptides on Gold Nanodots: Against Multidrug-Resistant Bacteria and Wound-Healing Application

Gold nanoparticle probes for the detection of mercury, lead and copper ions

Physical model for hole direct tunneling current in P super(+) poly-gate PMOSFETs with ultrathin gate oxides

Silver nanoclusters as fluorescent probes for selective and sensitive detection of copper ions

Selective Gold-Nanoparticle-Based “Turn-On” Fluorescent Sensors for Detection of Mercury(II) in Aqueous Solution

Highly Selective DNA-Based Sensor for Lead(II) and Mercury(II) Ions

Parameters for selective colorimetric sensing of mercury(II) in aqueous solutions using mercaptopropionic acid-modified gold nanoparticles

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