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Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors

Journal of applied physics, 2024-07, Vol.136 (1)

2024

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First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6

Journal of applied physics, 2019-11, Vol.126 (18)

2019

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Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

Nano letters, 2021-01, Vol.21 (1), p.500-506

2021

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Electron conduction mechanism in indium oxide and its implications for amorphous transport

Frontiers in materials, 2024-03, Vol.11

2024

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Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths

Nature communications, 2022-12, Vol.13 (1), p.7501-7501, Article 7501

2022

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In-situ STEM study on thermally induced phase transformation of magnetic (Nd0.75Ce0.25)2Fe14B ribbons

Materials & design, 2022-04, Vol.216, p.110525, Article 110525

2022

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Theoretical and Computational Analysis of a Wurtzite-AlGaN DUV-LED to Mitigate Quantum-Confined Stark Effect with a Zincblende Comparison Considering Mg- and Be-Doping

Nanomaterials (Basel, Switzerland), 2022-12, Vol.12 (23), p.4347

2022

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Ab Initio Design of Pb 2+ -based Ternary Oxides for Phase Stable and Hole Dopable p -type Oxides

Chemistry of materials, 2024-01, Vol.36 (2), p.742-751

2024

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Ab Initio Design of Pb2+-based Ternary Oxides for Phase Stable and Hole Dopable p‑type Oxides

Chemistry of materials, 2024-01, Vol.36 (2), p.742-751

2024

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Interlayer Engineering of Band Gap and Hole Mobility in p‑Type Oxide SnO

ACS applied materials & interfaces, 2022-06, Vol.14 (22), p.25670-25679

2022

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Amorphous Ta2SnO6: A hole-dopable p-type oxide

Applied surface science, 2023-03, Vol.613, p.155981, Article 155981

2023

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Controlling the Orientation‐Dependent Second Harmonic Generation in Hybrid Germanium Perovskites

Angewandte Chemie International Edition, 2024-08, Vol.63 (32), p.e202407675-n/a

International ed. in English, 2024

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Anisotropy of Anion Diffusion in All‐Inorganic Perovskite Single Crystals

Small (Weinheim an der Bergstrasse, Germany), 2024-06, Vol.20 (25), p.e2307360-n/a

2024

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Ilmenite and amorphous SnTiO3 as p-type oxide semiconductors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-04, Vol.11 (14), p.4830-4836

2023

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Correction to “Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide”

ACS applied materials & interfaces, 2024-08, Vol.16 (34), p.45798-45798

2024

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Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides

ACS nano, 2023-10, Vol.17 (20), p.20353-20365

2023

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Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.231-236

2022

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Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide

ACS applied materials & interfaces, 2024-03, Vol.16 (10), p.13258-13266

2024

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Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium

Applied surface science, 2022-03, Vol.578, p.152073, Article 152073

2022

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van der Waals 2D metallic materials for low-resistivity interconnects

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-04, Vol.1 (14), p.5627-5635

2022

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Mechanism of mixed conductivity in crystalline and amorphous lithium lanthanum titanate

Solid state ionics, 2022-11, Vol.386, p.116029, Article 116029

2022

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Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

Semiconductor science and technology, 2018-03, Vol.33 (4)

2018

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Non-epitaxial single-crystal 2D material growth by geometric confinement

Nature (London), 2023-02, Vol.614 (7946), p.88-94

2023

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First Principles Design of High Hole Mobility p -Type Sn–O– X Ternary Oxides: Valence Orbital Engineering of Sn 2+ in Sn 2+ –O– X by Selection of Appropriate Elements X

Chemistry of materials, 2021-01, Vol.33 (1), p.212-225

2021

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Electronic structure and optical properties of InSe/α-AsP van der Waals heterostructure from DFT calculations

Physica. E, Low-dimensional systems & nanostructures, 2021-06, Vol.130, p.114674, Article 114674

2021

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Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors

First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

Electron conduction mechanism in indium oxide and its implications for amorphous transport

Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths

In-situ STEM study on thermally induced phase transformation of magnetic (Nd0.75Ce0.25)2Fe14B ribbons

Theoretical and Computational Analysis of a Wurtzite-AlGaN DUV-LED to Mitigate Quantum-Confined Stark Effect with a Zincblende Comparison Considering Mg- and Be-Doping

Ab Initio Design of Pb 2+ -based Ternary Oxides for Phase Stable and Hole Dopable p -type Oxides

Ab Initio Design of Pb2+-based Ternary Oxides for Phase Stable and Hole Dopable p‑type Oxides

Interlayer Engineering of Band Gap and Hole Mobility in p‑Type Oxide SnO

Amorphous Ta2SnO6: A hole-dopable p-type oxide

Controlling the Orientation‐Dependent Second Harmonic Generation in Hybrid Germanium Perovskites

Anisotropy of Anion Diffusion in All‐Inorganic Perovskite Single Crystals

Ilmenite and amorphous SnTiO3 as p-type oxide semiconductors

Correction to “Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide”

Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide

Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium

van der Waals 2D metallic materials for low-resistivity interconnects

Mechanism of mixed conductivity in crystalline and amorphous lithium lanthanum titanate

Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

Non-epitaxial single-crystal 2D material growth by geometric confinement

First Principles Design of High Hole Mobility p -Type Sn–O– X Ternary Oxides: Valence Orbital Engineering of Sn 2+ in Sn 2+ –O– X by Selection of Appropriate Elements X

Electronic structure and optical properties of InSe/α-AsP van der Waals heterostructure from DFT calculations

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