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Short wave infrared LEDs based on strained GeSn

Microwave and optical technology letters, 2018-05, Vol.60 (5), p.1151-1154

2018

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Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET

Microelectronics and reliability, 2017-08, Vol.75, p.69-76

2017

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Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance

Chinese physics B, 2020-10, Vol.29 (10), p.107401

2020

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Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs

Advances in Condensed Matter Physics, 2015-01, Vol.2015 (2015), p.874-879

2015

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A Positioning System based on Communication Satellites and the Chinese Area Positioning System (CAPS)

Chinese journal of astronomy and astrophysics, 2008-12, Vol.8 (6), p.611-630

2008

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Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor

Chinese physics B, 2013-03, Vol.22 (3), p.528-533

李妤晨张鹤鸣张玉明胡辉勇王斌娄永乐周春宇

2013

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Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect

Chinese physics B, 2021-04, Vol.30 (4), p.47401

2021

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Physically-based modeling for hole scattering rate in strained Si1−xGex/(100)Si

Journal of Central South University, 2015-02, Vol.22 (2), p.430-436

2015

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Conduction Band Model of [110]/(001) Uniaxially Strained Si

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10), p.104301-104301-4

2012

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The role of halogen bonding in improving OFET performance of a naphthalenediimide derivative

Chinese chemical letters, 2018-03, Vol.29 (3), p.423-428

2018

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Double-gate tunnel field-effect transistor：Gate threshold voltage modeling and extraction

Journal of Central South University, 2014-02, Vol.21 (2), p.587-592

李妤晨张鹤鸣胡辉勇张玉明王斌周春宇

2014

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Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

Chinese physics B, 2018-06, Vol.27 (6), p.67402

2018

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High-Frequency Capacitance--Voltage Characteristics of N-Type Metal--Oxide--Semiconductor Capacitor Based on Strained-Si/SiGe Architecture

Japanese Journal of Applied Physics, 2013-06, Vol.52 (6), p.064201-064201-4

2013

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Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology

Journal of Central South University, 2014-06, Vol.21 (6), p.2292-2297

王斌张鹤鸣胡辉勇张玉明周春宇李妤晨

2014

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Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

Chinese physics B, 2011-10, Vol.20 (10), p.480-485, Article 108502

2011

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An analytical threshold voltage model for dual-strained channel PMOSFET

Chinese physics B, 2010-11, Vol.19 (11), p.608-614

秦珊珊张鹤鸣胡辉勇戴显英宣荣喜舒斌

2010

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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Chinese physics B, 2011-05, Vol.20 (5), p.444-449, Article 058502

徐小波张鹤鸣胡辉勇马建立

2011

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The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET

Chinese physics B, 2013-02, Vol.22 (2), p.539-544

王斌张鹤鸣胡辉勇张玉明周春宇王冠宇李妤晨

2013

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Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

Chinese physics B, 2011-05, Vol.20 (5), p.450-454, Article 058503

徐小波张鹤鸣胡辉勇屈江涛

2011

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Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET

Journal of Central South University, 2013-09, Vol.20 (9), p.2366-2371

2013

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New experimental discovery of channel crystal plane and orientation selection for small-sized uniaxial strained Si PMOS

Wuli xuebao, 2018-03, Vol.67 (6), p.68501

2018

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Analytical threshold voltage model for strained silicon GAA-TFET

Chinese physics B, 2016-11, Vol.25 (11), p.640-644

康海燕胡辉勇王斌

2016

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New Study on Experimental and Theoretical Mobility Sorts for Crystal Planes and Orientations of Small-Sized Uniaxial Strained Si NMOS Channel

Science of advanced materials, 2019-04, Vol.11 (4), p.507-514

2019

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Intrinsic Carrier Concentration in Strained Si1-XGex/(101)Si

Materials science forum, 2010-11, Vol.663-665, p.470-472

2010

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Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

Chinese physics B, 2017-12, Vol.26 (12), p.511-515

2017

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Short wave infrared LEDs based on strained GeSn

Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET

Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance

Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs

A Positioning System based on Communication Satellites and the Chinese Area Positioning System (CAPS)

Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor

Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect

Physically-based modeling for hole scattering rate in strained Si1−xGex/(100)Si

Conduction Band Model of [110]/(001) Uniaxially Strained Si

The role of halogen bonding in improving OFET performance of a naphthalenediimide derivative

Double-gate tunnel field-effect transistor：Gate threshold voltage modeling and extraction

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

High-Frequency Capacitance--Voltage Characteristics of N-Type Metal--Oxide--Semiconductor Capacitor Based on Strained-Si/SiGe Architecture

Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology

Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

An analytical threshold voltage model for dual-strained channel PMOSFET

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET

Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET

New experimental discovery of channel crystal plane and orientation selection for small-sized uniaxial strained Si PMOS

Analytical threshold voltage model for strained silicon GAA-TFET

New Study on Experimental and Theoretical Mobility Sorts for Crystal Planes and Orientations of Small-Sized Uniaxial Strained Si NMOS Channel

Intrinsic Carrier Concentration in Strained Si1-XGex/(101)Si

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

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