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IEEE transactions on electron devices, 1972-11, Vol.19 (11), p.1219-1221
1972
Volltextzugriff (PDF)
Solid-state electronics, 1972-01, Vol.15 (11), p.1237-1243
1972
Volltextzugriff (PDF)
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Thema
- Engineering
- Engineering, Electrical & Electronic
- Physical Sciences
- Physics
- Physics, Applied
- Science & Technology
- Technology
- Boron Ions
- Boron Ions/implantation Into Mosfet Transistors And Capacitors At 42 Kev, Effects On Characteristics
- Capacitors
- Electric Currents
- Electric Potential
- Electrical Properties
- Ion Implantation
- Kev Range 10-100
- Mosfet
- N46400 --Instrumentation--Miscellaneous Instruments
- N74100 --Physics --Radiation Effects
- Physics, Condensed Matter
- Radiation Doses Transistors/characteristics Of Boron-Implanted-Channel Mosfet
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