UB Paderborn / Katalog / Suche / in CDI

Improvement of the Efficiency of InGaN-GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process

IEEE photonics technology letters, 2009-04, Vol.21 (7), p.414-416

2009

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Surface optical phonon modes in ternary aligned crystalline InGaN/GaN multi-quantum-well nanopillar arrays

Journal of Raman spectroscopy, 2009-12, Vol.40 (12), p.2044-2049

2009

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Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling

Nanotechnology, 2007-11, Vol.18 (44), p.445301-445301 (6)

2007

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III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.140-144

2010

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InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

Nanoscale research letters, 2011-07, Vol.6 (1), p.442-442, Article 442

2011

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Fabrication of Nanopillars Comprised of InGaN/GaN Multiple Quantum Wells by Focused Ion Beam Milling

Japanese Journal of Applied Physics, 2008-06, Vol.47 (6S), p.4906

2008

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Gallium Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching

Japanese Journal of Applied Physics, 2002-08, Vol.41 (Part 2, No. 8B), p.L910-L912

2002

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Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

Journal of alloys and compounds, 2012-01, Vol.511 (1), p.1-4

2012

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Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2661

2005

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Focused Ion Beam Milled InGaN/GaN Multiple Quantum Well Nanopillars

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.3130

2008

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Origins of efficient green light emission in phase-separated InGaN quantum wells

Nanotechnology, 2006-08, Vol.17 (15), p.3734-3739

2006

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Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well

Journal of applied physics, 2001-11, Vol.90 (10), p.5180-5182

2001

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Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-10, Vol.113 (2), p.125-129

2004

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Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering

Solid-state electronics, 2003-10, Vol.47 (10), p.1805-1809

2003

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The influence of quasi-quantum dots on the physical properties of blue InGaN/GaN multiple quantum wells

Nanotechnology, 2006-09, Vol.17 (17), p.4300-4306

2006

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Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3442

2006

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10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation

Semiconductor science and technology, 2004-08, Vol.19 (8), p.L86-L89

2004

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Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures

Solid-state electronics, 2003-03, Vol.47 (3), p.575-578

2003

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Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-10, Vol.113 (2), p.125-129

2004

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III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate : Light-emitting diodes

IEEE transactions on electron devices, 2010, Vol.57 (1), p.140-144

2010

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Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask

The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004, 2004, Vol.1, p.288-289 Vol.1

2004

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The influence of quasi-quantum dots on the physical properties of blue

Nanotechnology, 2006-09, Vol.17 (17), p.4300-4306

2006

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High performance large area single-mode vertical-cavity surface-emitting lasers

CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671), 2003, Vol.1, p.160 Vol.1

2003

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Fabrication and Characterization of In 0.25 Ga 0.75 N/GaN Multiple Quantum Wells Embedded in Nanorods

Japanese Journal of Applied Physics, 2005-10, Vol.44 (10R), p.7723

2005

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Fabrication of Nanopillars comprised of InGaN/GaN Multiple Quantum Wells by Focused Ion Beam Milling

2007 Digest of papers Microprocesses and Nanotechnology, 2007, p.64-65

2007

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Improvement of the Efficiency of InGaN-GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process

Surface optical phonon modes in ternary aligned crystalline InGaN/GaN multi-quantum-well nanopillar arrays

Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling

III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate

InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

Fabrication of Nanopillars Comprised of InGaN/GaN Multiple Quantum Wells by Focused Ion Beam Milling

Gallium Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching

Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks

Focused Ion Beam Milled InGaN/GaN Multiple Quantum Well Nanopillars

Origins of efficient green light emission in phase-separated InGaN quantum wells

Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well

Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering

The influence of quasi-quantum dots on the physical properties of blue InGaN/GaN multiple quantum wells

Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces

10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation

Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures

Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate : Light-emitting diodes

Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask

The influence of quasi-quantum dots on the physical properties of blue

High performance large area single-mode vertical-cavity surface-emitting lasers

Fabrication and Characterization of In 0.25 Ga 0.75 N/GaN Multiple Quantum Wells Embedded in Nanorods

Fabrication of Nanopillars comprised of InGaN/GaN Multiple Quantum Wells by Focused Ion Beam Milling

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