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Experimental investigation of the reliability issue of RRAM based on high resistance state conduction

Nanotechnology, 2011-06, Vol.22 (25), p.254016-254016

2011

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Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot

IEEE electron device letters, 2011-11, Vol.32 (11), p.1585-1587

2011

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Good Endurance and Memory Window for Ti/HfOx Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

IEEE electron device letters, 2011-03, Vol.32 (3), p.390-392

2011

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Robust High-Resistance State and Improved Endurance of \hbox Resistive Memory by Suppression of Current Overshoot

IEEE electron device letters, 2011-11, Vol.32 (11), p.1585-1587

2011

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Good Endurance and Memory Window for \hbox Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

IEEE electron device letters, 2011-03, Vol.32 (3), p.390-392

2011

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IEEE_Xplore

Size dependence of TiN/HfO2/Ti MIM ReRAM resistance states: Model and experimental results

Current applied physics, 2010-01, Vol.10 (1), p.e75-e78

2010

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Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM

2011 International Reliability Physics Symposium, 2011, p.MY.8.1-MY.8.5

2011

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IEEE_Xplore

Impact of resistance drift on multilevel PCM design

2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010, p.20-23

2010

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IEEE_Xplore

Design optimization in write speed of multi-level cell application for phase change memory

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), 2009, p.525-528

2009

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IEEE_Xplore

Multi-level phase change memory using slow-quench operation: GST vs. GSST

2009 International Symposium on VLSI Technology, Systems, and Applications, 2009, p.39-40

2009

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IEEE_Xplore

Comprehensively study of read disturb immunity and optimal read scheme for high speed HfOx based RRAM with a Ti layer

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.132-133

2010

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IEEE_Xplore

Scalability with silicon nitride encapsulation layer for Ti/HfOx pillar RRAM

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.146-147

2010

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IEEE_Xplore

Robust High-Resistance State and Improved Endurance of [Formula Omitted] Resistive Memory by Suppression of Current Overshoot

IEEE electron device letters, 2011-11, Vol.32 (11), p.1585

2011

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Robust High-Resistance State and Improved Endurance of hbox HfO X Resistive Memory by Suppression of Current Overshoot

IEEE electron device letters, 2011-11, Vol.32 (11), p.1585-1587

2011

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Impact of compliance current overshoot on high resistance state, memory performance, and device yield of HfOx based resistive memory and its solution

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, 2011, p.1-2

2011

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IEEE_Xplore

Good Endurance and Memory Window for [Formula Omitted] Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

IEEE electron device letters, 2011-03, Vol.32 (3), p.390

2011

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Good Endurance and Memory Window for hbox Ti / HfO x Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

IEEE electron device letters, 2011-03, Vol.32 (3), p.390-392

2011

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Size dependence of TiN/HfO 2/Ti MIM ReRAM resistance states: Model and experimental results

Current applied physics, 2010, Vol.10 (1), p.e75-e78

2010

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The Decomposition Analysis of Tourism Water Footprint in Taiwan: Revealing Decision-Relevant Information

Journal of travel research, 2019-04, Vol.58 (4), p.695-708

2019

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Dlk1-Dio3 locus-derived lncRNAs perpetuate postmitotic motor neuron cell fate and subtype identity

eLife, 2018-10, Vol.7

2018

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MicroRNA filters Hox temporal transcription noise to confer boundary formation in the spinal cord

Nature communications, 2017-03, Vol.8 (1), p.14685-14685, Article 14685

2017

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MiR34 contributes to spinal muscular atrophy and AAV9-mediated delivery of MiR34a ameliorates the motor deficits in SMA mice

Molecular therapy. Nucleic acids, 2023-06, Vol.32, p.144-160

2023

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Predictive Factors for Nasogastric Tube Removal in Post-Stroke Patients

Medicina (Kaunas, Lithuania), 2023-02, Vol.59 (2), p.368

2023

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Multi-disciplinary management of type 1 and 2 skin tears using a silver-based hydrofiber dressing

Medicine (Baltimore), 2023-09, Vol.102 (37), p.e35112-e35112

2023

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Epidemic-Prevention Measures and Health Management in a Nursing Home during the Coronavirus Disease 2019 Pandemic

Healthcare (Basel), 2023-09, Vol.11 (18), p.2535

2023

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Experimental investigation of the reliability issue of RRAM based on high resistance state conduction

Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot

Good Endurance and Memory Window for Ti/HfOx Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

Robust High-Resistance State and Improved Endurance of \hbox Resistive Memory by Suppression of Current Overshoot

Good Endurance and Memory Window for \hbox Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

Size dependence of TiN/HfO2/Ti MIM ReRAM resistance states: Model and experimental results

Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM

Impact of resistance drift on multilevel PCM design

Design optimization in write speed of multi-level cell application for phase change memory

Multi-level phase change memory using slow-quench operation: GST vs. GSST

Comprehensively study of read disturb immunity and optimal read scheme for high speed HfOx based RRAM with a Ti layer

Scalability with silicon nitride encapsulation layer for Ti/HfOx pillar RRAM

Robust High-Resistance State and Improved Endurance of [Formula Omitted] Resistive Memory by Suppression of Current Overshoot

Robust High-Resistance State and Improved Endurance of hbox HfO X Resistive Memory by Suppression of Current Overshoot

Impact of compliance current overshoot on high resistance state, memory performance, and device yield of HfOx based resistive memory and its solution

Good Endurance and Memory Window for [Formula Omitted] Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

Good Endurance and Memory Window for hbox Ti / HfO x Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

Size dependence of TiN/HfO 2/Ti MIM ReRAM resistance states: Model and experimental results

The Decomposition Analysis of Tourism Water Footprint in Taiwan: Revealing Decision-Relevant Information

Dlk1-Dio3 locus-derived lncRNAs perpetuate postmitotic motor neuron cell fate and subtype identity

MicroRNA filters Hox temporal transcription noise to confer boundary formation in the spinal cord

MiR34 contributes to spinal muscular atrophy and AAV9-mediated delivery of MiR34a ameliorates the motor deficits in SMA mice

Predictive Factors for Nasogastric Tube Removal in Post-Stroke Patients

Multi-disciplinary management of type 1 and 2 skin tears using a silver-based hydrofiber dressing

Epidemic-Prevention Measures and Health Management in a Nursing Home during the Coronavirus Disease 2019 Pandemic

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