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InGaN-GaN MQW LEDs with Si treatment

IEEE photonics technology letters, 2005-08, Vol.17 (8), p.1620-1622

2005

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IEEE_Xplore

Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD

IEEE electron device letters, 2005-07, Vol.26 (7), p.464-466

2005

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IEEE_Xplore

Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact

IEEE photonics technology letters, 2004-04, Vol.16 (4), p.1002-1004

2004

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IEEE_Xplore

Obesity is a prognostic factor for poor clinical outcome of major blunt multiple trauma patients

Clinical nutrition (Edinburgh, Scotland), 2018-09, Vol.37, p.S40-S40

2018

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Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

Journal of crystal growth, 2004-02, Vol.261 (4), p.466-470

2004

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Nitride-based light-emitting diodes with p-AlInGaN surface layers

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2346-2349

2005

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IEEE_Xplore

Si and Zn co-doped InGaN-GaN white light-emitting diodes

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.519-521

2003

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IEEE_Xplore

Rapid thermal annealed InGaN/GaN flip-chip LEDs

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.32-37

2006

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IEEE_Xplore

Nitride-based LEDs with 800°C grown p-AlInGaN-GaN double-cap layers

IEEE photonics technology letters, 2004-06, Vol.16 (6), p.1447

2004

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ICP etching of sapphire substrates

Optical materials, 2005-03, Vol.27 (6), p.1171-1174

2005

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Nitride-based flip-chip ITO LEDs

IEEE transactions on advanced packaging, 2005-05, Vol.28 (2), p.273-277

2005

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IEEE_Xplore

In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

Solid-state electronics, 2003-11, Vol.47 (11), p.2027-2030

2003

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High brightness InGaN green LEDs with an ITO on n++-SPS upper contact

IEEE transactions on electron devices, 2003-11, Vol.50 (11), p.2208-2212

2003

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Nitride-Based LEDs With 800 $^circhboxC$ Grown p-AlInGaN–GaN Double-Cap Layers

IEEE photonics technology letters, 2004-06, Vol.16 (6), p.1447-1449

2004

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Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers

IEEE photonics technology letters, 2004-06, Vol.16 (6), p.1447-1449

2004

Link zum Volltext
IEEE_Xplore

Highly Reliable High-Brightness GaN-Based Flip Chip LEDs

IEEE transactions on advanced packaging, 2007-11, Vol.30 (4), p.752-757

2007

Link zum Volltext
IEEE_Xplore

Nitride-based flip-chip LEDs with transparent Ohmic contacts and reflective mirrors

IEEE transactions on advanced packaging, 2006-08, Vol.29 (3), p.403-408

2006

Link zum Volltext
IEEE_Xplore

High brightness InGaN green LEDs with an ITO on n/sup ++/-SPS upper contact

IEEE transactions on electron devices, 2003-11, Vol.50 (11), p.2208-2212

2003

Link zum Volltext
IEEE_Xplore

Overproduction and control of the LEU2 gene product, beta- isopropylmalate dehydrogenase, in transformed yeast strains [Saccharomyces cerevisiae]

The Journal of biological chemistry, 1982-01, Vol.257 (1), p.39-41

1982

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Activation of CFTR chloride current by nitric oxide in human T lymphocytes

The EMBO journal, 1995-06, Vol.14 (12), p.2700-2707

1995

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In 0.23Ga 0.77N/GaN MQW LEDs with a low temperature GaN cap layer

Solid-state electronics, 2003, Vol.47 (11), p.2027-2030

2003

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Comparison of three methods for estimation of the reduced-S content in estuarine sediments

The Science of the total environment, 1996-08, Vol.187 (1), p.1-9

1996

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Yeast LEU2. Repression of mRNA levels by leucine and primary structure of the gene product

The Journal of biological chemistry, 1984-07, Vol.259 (13), p.8059-8062

1984

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Leucine biosynthesis in Saccharomyces cerevisiae [Yeast]

The Journal of biological chemistry, 1980-08, Vol.255 (15)

1980

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Grass pollen immunotherapy: A single year double-blind, placebo-controlled study in patients with grass pollen-induced asthma and rhinitis

Journal of allergy and clinical immunology, 1984-01, Vol.73 (2), p.283-290

1984

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InGaN-GaN MQW LEDs with Si treatment

Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD

Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact

Obesity is a prognostic factor for poor clinical outcome of major blunt multiple trauma patients

Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

Nitride-based light-emitting diodes with p-AlInGaN surface layers

Si and Zn co-doped InGaN-GaN white light-emitting diodes

Rapid thermal annealed InGaN/GaN flip-chip LEDs

Nitride-based LEDs with 800°C grown p-AlInGaN-GaN double-cap layers

ICP etching of sapphire substrates

Nitride-based flip-chip ITO LEDs

In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

High brightness InGaN green LEDs with an ITO on n++-SPS upper contact

Nitride-Based LEDs With 800 $^circhboxC$ Grown p-AlInGaN–GaN Double-Cap Layers

Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers

Highly Reliable High-Brightness GaN-Based Flip Chip LEDs

Nitride-based flip-chip LEDs with transparent Ohmic contacts and reflective mirrors

High brightness InGaN green LEDs with an ITO on n/sup ++/-SPS upper contact

Overproduction and control of the LEU2 gene product, beta- isopropylmalate dehydrogenase, in transformed yeast strains [Saccharomyces cerevisiae]

Activation of CFTR chloride current by nitric oxide in human T lymphocytes

In 0.23Ga 0.77N/GaN MQW LEDs with a low temperature GaN cap layer

Comparison of three methods for estimation of the reduced-S content in estuarine sediments

Yeast LEU2. Repression of mRNA levels by leucine and primary structure of the gene product

Leucine biosynthesis in Saccharomyces cerevisiae [Yeast]

Grass pollen immunotherapy: A single year double-blind, placebo-controlled study in patients with grass pollen-induced asthma and rhinitis

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