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Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon With Schottky Tri-Drain Extension

IEEE electron device letters, 2020-07, Vol.41 (7), p.1048-1051

2020

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C-Axis Aligned Crystalline InSnZnO Thin Film Using Mist Chemical Vapor Deposition and Deposition/Annealing Cyclic Method for Thin-Film Transistors Applications

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3617-3623

2023

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Study of a New Hydrogen Sensor Based on the Synthesis of a Sputtered In-Sn-Zn-O Thin Film and Evaporated Palladium Nanoparticles

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2612-2617

2024

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A Study of Deposition/Annealing Cyclic Method to Enhance the Performance of Zinc-Tin Oxide Thin-Film Transistor by Ultrasonic Spray Pyrolysis Deposition

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1913-1919

2024

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Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

IEEE electron device letters, 2019-06, Vol.40 (6), p.929-932

2019

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Comprehensive Study of Hydrogen Gas Sensing Performance of an Amorphous In-Al-Zn-O (a-IAZO) Thin Film Synthesized With Pd Nanoparticles

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4837-4842

2023

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High-Performance Normally-OFF AlGaN/GaN Fin-MISHEMT on Silicon With Low Work Function Metal-Source Contact Ledge

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5434-5440

2020

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Amorphous ITZO Thin-Film Transistors by Using Ultrasonic Spray Pyrolysis Deposition

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1009-1013

2020

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Deposition of Oxide Thin Films by Ultrasonic Spray Pyrolysis Deposition for InGaZnO Thin-Film Transistor Applications

IEEE electron device letters, 2018-10, Vol.39 (10), p.1520-1523

2018

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Leakage-Prevention Mechanism to Maintain Driving Capability of Compensation Pixel Circuit for Low Frame Rate AMOLED Displays

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2313-2319

2021

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All-zigzag graphene nanoribbons for planar interconnect application

Journal of applied physics, 2017-07, Vol.122 (3)

2017

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Effects of Ambient/Carrier Gas on Amorphous InGaZnO-Based Thin-Film Transistors Using Ultrasonic Spray Pyrolysis Deposition

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2729-2735

2021

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Bilayer Modulation With Dual Vacancy Filaments by Intentionally Oxidized Titanium Oxide for Multilayer-hBN RRAM

IEEE transactions on nanotechnology, 2021, Vol.20, p.687-694

2021

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Investigations on Wide-Gap Al0.21Ga0.79N Channel MOS-HFETs With In0.12Al0.76Ga0.12N Barrier/Buffer and Drain Field-Plate

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.256-261

2023

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Characteristics of Dye-Sensitized Solar Cells with TiO2 Stripes

Materials, 2022-06, Vol.15 (12), p.4212

2022

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Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.213-220

2013

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High-Breakdown P-Channel GaN MOS-HFETs with Al2O3-Dielectric and Drain Field-Plate

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Amorphous TiO2-Based Thin-Film Phototransistor

IEEE electron device letters, 2017-06, Vol.38 (6), p.756-759

2017

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Investigations on In0.12Al0.88N/AlN/AlxGa1-xN/ In0.12Al0.88N MOS-HFETs with Symmetrically-Graded Wide-gap Channel and Drain Field-Plate Design

IEEE access, 2024-01, Vol.12, p.1-1

2024

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Suppression of Dark Current on AlGaN/GaN Metal-Semiconductor-Metal Photodetectors

IEEE sensors journal, 2015-09, Vol.15 (9), p.5202-5207

2015

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Fabrication AlGaN/GaN MIS UV Photodetector by H2O2 Oxidation

IEEE photonics technology letters, 2015-01, Vol.27 (1), p.101-104

2015

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Integration of Gate Recessing and In Situ Cl− Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

IEEE electron device letters, 2017-01, Vol.38 (1), p.91-94

2017

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Design of Gate-All-Around Silicon MOSFETs for 6-T SRAM Area Efficiency and Yield

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2371-2377

2014

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Investigations of TiO2-AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

IEEE transactions on electron devices, 2015-05, Vol.62 (5), p.1460-1466

2015

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.9-14

2020

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Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon With Schottky Tri-Drain Extension

C-Axis Aligned Crystalline InSnZnO Thin Film Using Mist Chemical Vapor Deposition and Deposition/Annealing Cyclic Method for Thin-Film Transistors Applications

Study of a New Hydrogen Sensor Based on the Synthesis of a Sputtered In-Sn-Zn-O Thin Film and Evaporated Palladium Nanoparticles

A Study of Deposition/Annealing Cyclic Method to Enhance the Performance of Zinc-Tin Oxide Thin-Film Transistor by Ultrasonic Spray Pyrolysis Deposition

Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

Comprehensive Study of Hydrogen Gas Sensing Performance of an Amorphous In-Al-Zn-O (a-IAZO) Thin Film Synthesized With Pd Nanoparticles

High-Performance Normally-OFF AlGaN/GaN Fin-MISHEMT on Silicon With Low Work Function Metal-Source Contact Ledge

Amorphous ITZO Thin-Film Transistors by Using Ultrasonic Spray Pyrolysis Deposition

Deposition of Oxide Thin Films by Ultrasonic Spray Pyrolysis Deposition for InGaZnO Thin-Film Transistor Applications

Leakage-Prevention Mechanism to Maintain Driving Capability of Compensation Pixel Circuit for Low Frame Rate AMOLED Displays

All-zigzag graphene nanoribbons for planar interconnect application

Effects of Ambient/Carrier Gas on Amorphous InGaZnO-Based Thin-Film Transistors Using Ultrasonic Spray Pyrolysis Deposition

Bilayer Modulation With Dual Vacancy Filaments by Intentionally Oxidized Titanium Oxide for Multilayer-hBN RRAM

Investigations on Wide-Gap Al0.21Ga0.79N Channel MOS-HFETs With In0.12Al0.76Ga0.12N Barrier/Buffer and Drain Field-Plate

Characteristics of Dye-Sensitized Solar Cells with TiO2 Stripes

Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique

High-Breakdown P-Channel GaN MOS-HFETs with Al2O3-Dielectric and Drain Field-Plate

Amorphous TiO2-Based Thin-Film Phototransistor

Investigations on In0.12Al0.88N/AlN/AlxGa1-xN/ In0.12Al0.88N MOS-HFETs with Symmetrically-Graded Wide-gap Channel and Drain Field-Plate Design

Suppression of Dark Current on AlGaN/GaN Metal-Semiconductor-Metal Photodetectors

Fabrication AlGaN/GaN MIS UV Photodetector by H2O2 Oxidation

Integration of Gate Recessing and In Situ Cl− Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

Design of Gate-All-Around Silicon MOSFETs for 6-T SRAM Area Efficiency and Yield

Investigations of TiO2-AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

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